SIHFR9022

IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 14 6.5 6.5 Single S FEATURES - 50 0.33 • • • • • • • Surface Mountable (Order as IRFR9022/SiHFR9022) Available Straight Lead Option (Order as IRFU9022/SiHFU9022) RoHS* Repetitive Avalanche Ratings COMPLIANT Dynamic dV/dt Rating Simple Drive Requirements Ease of Paralleling Lead (Pb)-free Available DESCRIPTION DPAK (TO-252) IPAK (TO-251) G D P-Channel MOSFET The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt. The Power MOSFET transistors also feature all of the well established advantages of MOSFET’S such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The TO-252 surface mount package brings the advantages of Power MOSFET’s to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9022/SiHFR9022 is provided on 16mm tape. The straight lead option IRFR9022/SiHFR9022 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products. ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a. See device orientation. DPAK (TO-252) IRFR9022PbF SiHFR9022-E3 IRFR9022 SiHFR9022 DPAK (TO-252) IRFR9022TRPbFa SiHFR9022T-E3a IRFR9022TRa SiHFR9022Ta DPAK (TO-252) IRFR9022TRLPbFa SiHFR9022TL-E3a IRFR9022TRLa SiHFR9022TLa IPAK (TO-251) IRFU9022PbF SiHFU9022-E3 IRFU9022 SiHFU9022 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91349 S-Pending-Rev. A, 10-Jun-08 www.vishay.com 1 VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR LIMIT - 50 ± 20 - 9.0 - 5.7 - 36 0.33 440 - 9.9 4.2 UNIT V A W/°C mJ A mJ WORK-IN-PROGRESS IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Maximum Power Dissipation TC = 25 °C PD dV/dt Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. VDD = - 25 V, Starting TJ = 25 °C, L = 5.1 mH, RG = 25 Ω, Peak IL = - 9.9 A c. ISD ≤ - 9.9 A, dI/dt ≤ -120 A/µs, VDD ≤ 40 V, TJ ≤ 150 °C. d. 0.063" (1.6 mm) from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 42 5.8 - 55 to + 150 300d UNIT W V/ns °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC MIN. TYP. 1.7 MAX. 110 3.0 °C/W UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS Between lead, 6 mm (0.25") from package and center of die contact. D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = - 250 µA VDS = VGS, ID = - 250 µA VGS = ± 20 V VDS = max. rating, VGS = 0 V VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C VGS = - 10 V ID = 5.7 Ab VDS ≤ - 50 V, IDS = - 5.7 A - 50 - 2.0 2.3 0.28 3.5 - 4.0 ± 500 250 1000 0.33 - V V nA µA Ω S VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 9 ID = - 9.7 A, VDS = 0.8 x max. rating, see fig. 16 (Independent operating temperature) - 490 320 70 9.4 4.3 4.3 8.2 57 12 25 4.5 7.5 14 6.5 6.5 12 66 18 38 nH ns nC pF VGS = - 10 V VDD = - 25 V, ID = - 9.7 A, RG = 18 Ω, RD = 2.4 Ω, see fig. 15 (Independent operating temperature) - G S www.vishay.com 2 Document Number: 91349 S-Pending-Rev. A, 10-Jun-08 IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT 56 0.17 110 0.34 - 9.9 A - 40 - 6.3 280 0.85 V ns nC G S TJ = 25 °C, IS = - 9.9 A, VGS = 0 Vb TJ = 25 °C, IF = - 9,7 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Saturation Characteristics Fig. 2 - Typical Transfer Characteristics Fig. 4 - Maximum Safe Operating Area Document Number: 91349 S-Pending-Rev. A, 10-Jun-08 www.vishay.com 3 IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Fig. 5 - Typical Transconductance vs. Drain Current Fig. 7 - Breakdown Voltage vs. Temperature Fig. 6 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Normalized On-Resistance vs. Temperature www.vishay.com 4 Document Number: 91349 S-Pending-Rev. A, 10-Jun-08 IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 11 - Typical On-Resistance vs. Drain Current Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 12 - Maximum Drain Current vs. Case Temperature Document Number: 91349 S-Pending-Rev. A, 10-Jun-08 www.vishay.com 5 IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Fig. 13b - Unclamped Inductive Test Circuit IAS VDS IL VDD tp VDS Fig. 13c - Unclamped Inductive Waveforms Fig. 13a - Maximum Avalanche vs. Starting Junction Temperature Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration www.vishay.com 6 Document Number: 91349 S-Pending-Rev. A, 10-Jun-08 IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix td(on) VGS 10 % tr td(off) tf 90 % VDS Fig. 15a - Switching Time Waveforms Fig. 15b - Switching Time Test Circuit - 10 V QGS QG QGD VG Charge Fig. 16a - Basic Gate Charge Waveform Fig. 16b - Gate Charge Test Circuit Document Number: 91349 S-Pending-Rev. A, 10-Jun-08 www.vishay.com 7 IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + P.W. Period Ripple ≤ 5 % D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer RG Compliment N-Channel of D.U.T. for driver Driver gate drive D= D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current Body diode forward drop * VGS = - 5 V for logic level and - 3 V drive devices Fig. 17 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91349. www.vishay.com 8 + + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD P.W. Period VGS = - 10 V* VDD ISD Document Number: 91349 S-Pending-Rev. A, 10-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1