SIHFU014

IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 11 3.1 5.8 Single D FEATURES 60 0.20 • Dynamic dV/dt Rating • Surface Mount (IRFR014/SiHFR014) • Straight Lead (IRFU014/SiHFU014) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Simple Drive Requirements Available RoHS* COMPLIANT DPAK (TO-252) IPAK (TO-251) G • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a. See device orientation. DPAK (TO-252) IRFR014PbF SiHFR014-E3 IRFR014 SiHFR014 DPAK (TO-252) IRFR014TRLPbFa SiHFR014TL-E3a IRFR014TRLa SiHFR014TLa DPAK (TO-252) IRFR014TRPbFa SiHFR014T-E3a IRFR014TRa SiHFR014Ta IPAK (TO-251) IRFU014PbF SiHFU014-E3 IRFU014 SiHFU014 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e EAS TC = 25 °C TA = 25 °C PD dV/dt VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 60 ± 20 7.7 4.9 31 0.20 0.020 47 25 2.5 4.5 W/°C mJ W V/ns A UNIT V Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91263 S-81432-Rev. A, 07-Jul-08 www.vishay.com 1 IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s SYMBOL TJ, Tstg LIMIT - 55 to + 150 260d UNIT °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 924 µH, RG = 25 Ω, IAS = 7.7 A (see fig. 12). c. ISD ≤ 10 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJA RthJC MIN. TYP. MAX. 110 50 5.0 °C/W UNIT Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS Between lead, 6 mm (0.25") from package and center of die contactc D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 4.6 Ab VDS = 25 V, ID = 4.6 A 60 2.0 2.4 S 0.068 300 160 29 10 50 13 19 4.5 7.5 4.0 ± 100 25 250 0.20 11 3.1 5.8 - V V/°C V nA µA Ω S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 pF VGS = 10 V ID = 10 A, VDS = 48 V, see fig. 6 and 13b nC VDD = 30 V, ID = 10 A, RG = 24 Ω, RD = 2.7 Ω, see fig. 10b ns nH G - www.vishay.com 2 Document Number: 91263 S-81432-Rev. A, 07-Jul-08 IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT - 70 0.20 7.7 A 31 1.6 140 0.40 V ns µC G S TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb TJ = 25 °C, IF = 10 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91263 S-81432-Rev. A, 07-Jul-08 Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91263 S-81432-Rev. A, 07-Jul-08 IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix VDS VGS RG RD D.U.T. + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91263 S-81432-Rev. A, 07-Jul-08 www.vishay.com 5 IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix L Vary tp to obtain required IAS RG VDS tp VDD D.U.T I AS 10 V tp 0.01 Ω IAS Fig. 12b - Unclamped Inductive Waveforms VDS + - V DD VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 12 V 0.2 µF 0.3 µF VGS QGS QG QGD D.U.T. + - VDS VG VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91263 S-81432-Rev. A, 07-Jul-08 IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - RG • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % ISD * VGS = 5 V for logic level and 3 V drive devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91263. Document Number: 91263 S-81432-Rev. A, 07-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1