SIHFU420A-E3

IRFR420A, IRFU420A, SiHFR420A, Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 17 4.3 8.5 Single D FEATURES 500 3.0 • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available DPAK (TO-252) IPAK (TO-251) G APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a. See device orientation. DPAK (TO-252) IRFR420APbF SiHFR420A-E3 IRFR420A SiHFR420A DPAK (TO-252) IRFR420ATRPbFa SiHFR420AT-E3a DPAK (TO-252) IRFR420ATRLPbF SiHFR420ATL-E3 IPAK (TO-251) IRFU420APbF SiHFU420A-E3 IRFU420A SiHFU420A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya TC = 25 °C Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). Starting TJ = 25 °C, L = 45 mH, RG = 25 Ω, IAS = 2.5 A (see fig. 12). ISD ≤ 2.5 A, dI/dt ≤ 270 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. 1.6 mm from case. for 10 s EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 500 ± 30 3.3 2.1 10 0.67 140 2.5 5.0 83 3.4 - 55 to + 150 300d W/°C mJ A mJ W V/ns °C A UNIT V * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91274 S-Pending-Rev. A, 21-Jul-08 WORK-IN-PROGRESS www.vishay.com 1 IRFR420A, IRFU420A, SiHFR420A, Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.50 MAX. 62 1.5 °C/W UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 1.5 Ab VDS = 50 V, ID = 1.5 A 500 2.0 1.4 0.60 - 4.5 ± 100 25 250 3.0 - V V/°C V nA µA Ω S Ciss Coss Crss Coss Coss eff. Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V, f = 1.0 MHz VGS = 0 V VDS = 400 V, f = 1.0 MHz VDS = 0 V to 400 VGS = 10 V Vc - 340 53 2.7 490 15 28 8.1 12 16 13 17 4.3 8.5 ns nC pF pF ID = 2.5 A, VDS = 400 V, see fig. 6 and 13b - VDD = 250 V, ID = 2.5 A, RG = 21 Ω, RD = 97 Ω, see fig. 10b - - 330 760 3.3 A 10 1.6 500 1140 V ns µC G S TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91274 S-Pending-Rev. A, 21-Jul-08 IRFR420A, IRFU420A, SiHFR420A, Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TJ = 150 ° C 1 1 TJ = 25 ° C 0.1 0.1 4.5V 0.01 0.1 20μs PULSE WIDTH TJ = 25 °C 1 10 100 0.01 4.0 V DS = 50V 20μs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 VDS , Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 10 TOP RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 3.0 ID = 2.5A 2.5 2.0 1 1.5 4.5V 1.0 0.5 0.1 1 10 20μs PULSE WIDTH TJ = 150 ° C 100 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91274 S-Pending-Rev. A, 21-Jul-08 www.vishay.com 3 IRFR420A, IRFU420A, SiHFR420A, Vishay Siliconix 10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd 10 1000 ISD , Reverse Drain Current (A) Coss = C + Cgd ds C, Capacitance(pF) Ciss 100 TJ = 150 ° C Coss 1 10 TJ = 25 ° C Crss 1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 ID = 2.5A VGS , Gate-to-Source Voltage (V) VDS = 400V VDS = 250V VDS = 100V 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 15 I D , Drain Current (A) 10 10us 10 100us 1 5 1ms 0 FOR TEST CIRCUIT SEE FIGURE 13 0 4 8 12 16 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 10ms QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 1000 10000 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91274 S-Pending-Rev. A, 21-Jul-08 IRFR420A, IRFU420A, SiHFR420A, Vishay Siliconix 5.0 VDS VGS RG RD D.U.T. + - VDD 4.0 10 V ID , Drain Current (A) 3.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 2.0 Fig. 10a - Switching Time Test Circuit 1.0 VDS 90 % 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10 % VGS td(on) tr td(off) tf Fig. 9 - Maximum Drain Current vs. Case Temperature 10 Fig. 10b - Switching Time Waveforms (Z thJC ) 1 D = 0.50 Thermal Response 0.20 0.10 P DM 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 +T C 1 t1 t2 J = P DM x Z thJC 0.1 t 1, Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 15 V VDS tp VDS L Driver RG 20 V tp D.U.T IAS 0.01 Ω + A - VDD IAS Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91274 S-Pending-Rev. A, 21-Jul-08 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFR420A, IRFU420A, SiHFR420A, Vishay Siliconix 300 EAS , Single Pulse Avalanche Energy (mJ) TOP 250 BOTTOM 200 V DSav , Avalanche Voltage ( V ) ID 1.1A 1.6A 2.5A 700 650 150 600 100 50 550 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 IAV , Avalanche Current ( A) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Starting TJ , Junction Temperature ( °C) Fig. 12d - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. QG 10 V QGS QGD D.U.T. 12 V 0.2 µF 0.3 µF 50 kΩ + - VDS VG VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91274 S-Pending-Rev. A, 21-Jul-08 IRFR420A, IRFU420A, SiHFR420A, Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91274. Document Number: 91274 S-Pending-Rev. A, 21-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1