SIHFZ20

IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 17 9.0 3.0 Single 50 0.10 FEATURES • • • • • • • • Extremely Low RDS(on) Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Parts Per Million Quality Compliant to RoHS Directive 2002/95/EC D TO-220AB DESCRIPTION The technology has expanded its product base to serve the low voltage, very low RDS(on) MOSFET transistor requirements. Vishay’s highly efficient geometry and unique processing have been combined to create the lowest on resistance per device performance. In addition to this feature all have documented reliability and parts per million quality! The transistor also offer all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and in systems that are operated from low voltage batteries, such as automotive, portable equipment, etc. G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRFZ20PbF SiHFZ20-E3 IRFZ20 SiHFZ20 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltagea Gate-Source Voltagea Continuous Drain Current Pulsed Drain Currentb Single Pulse Avalanche Energyc Linear Derating Factor (see fig. 16) Maximum Power Dissipation (see fig. 16) Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS TC = 25 °C for 10 s PD TJ, Tstg LIMIT 50 ± 20 15 10 60 5 0.32 40 - 55 to + 150 300 (0.063" (1.6 mm) from case UNIT V A mJ W/°C W °C Notes a. TJ = 25 °C to 150 °C b. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 11). c. Starting TJ = 25 °C, L = 0.07 mH, Rg = 25 , IAS = 12 A * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 www.vishay.com 1 IRFZ20, SiHFZ20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Typical Socket Mount, Junction-to-Ambient Case-to-Sink, Mounting Surface Flat, Smooth, and Greased Junction-to-Case SYMBOL RthJA RthCS RthJC TYP. 1.0 MAX. 80 3.12 °C/W UNIT ELECTRICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistanceb Forward Transconductanceb Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltageb Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction rectifier D SYMBOL VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS TEST CONDITIONS VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS > Max. Rating, VGS = 0 V VDS = Max. Rating x 0.8, VGS = 0 V, TC = 125 °C VGS = 10 V VGS = 10 V VDS > ID(on) x RDS(on) max. I D = 10 A MIN. 50 2.0 5.0 - TYP. 0.080 6.0 560 250 60 12 9.0 3.0 15 45 20 15 3.5 4.5 MAX. 4.0 ± 500 250 1000 15 0.10 860 350 100 17 30 90 40 30 - UNIT V V nA μA A  S VDS > ID(on) x RDS(on) max., ID = 9.0 A VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 11 ID = 20 A, VDS = 0.8 max. rating, see fig. 18 for test circuit (Gate charge is essentially independent of operating temperature) pF VGS = 10 V nC VDD = 25 V, ID = 9.0 A, Z0 = 50 , see fig. 5b Modified MOSFET symbol showing the internal device inductances ns D - G nH S - 100 0.4 15 A 60 1.5 V ns μC G S TC = 25 °C, IS = 15 A, VGS = 0 V TJ = 150 °C, IF = 15 A, dIF/dt = 100 A/μs Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 5). b. Pulse test: Pulse width  300 μs; duty cycle  2 %. www.vishay.com 2 Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 IRFZ20, SiHFZ20 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Saturation Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 www.vishay.com 3 IRFZ20, SiHFZ20 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 IRFZ20, SiHFZ20 Vishay Siliconix VDS VGS RG RD D.U.T. + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration VDS tp VDD VDS IAS Fig. 12a - Clamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 www.vishay.com 5 IRFZ20, SiHFZ20 Vishay Siliconix Fig. 13 - Typical Transconductance vs. Drain Current Fig. 14 - Breakdown Voltage vs. Temperature Fig. 16 - Power vs. Temperature Derating Curve Fig. 15 - Typical On-Resistance vs. Drain Current www.vishay.com 6 Fig. 17 - Gate Charge Test Circuit Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 IRFZ20, SiHFZ20 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer D.U.T. + - - + Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % Note a. VGS = 5 V for logic level devices ISD Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91340. Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1