SiHG47N60E
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Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 220 36 60 Single
D
FEATURES
650 0.064
• Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses • Ultra Low Gate Charge (Qg) • Avalanche Energy Rated (UIS) • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
TO-247AC
G
S D G
S N-Channel MOSFET
• Switch Mode Power Supplies (SMPS) • Power Factor Correction Power Supplies (PFC) • Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting • Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers - Renewable Energy - Solar (PV Inverters)
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free TO-247AC SiHG47N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) Continuous Drain Current (TJ = 150 °C) Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dtd Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 73.5 mH, Rg = 25 , IAS = 6.4 A. c. 1.6 mm from case. d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. TJ = 125 °C EAS PD TJ, Tstg dV/dt VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 600 ± 20 30 47 30 145 3 1500 357 - 55 to + 150 37 11 300c W/°C mJ W °C V/ns °C A V UNIT
S11-2089 Rev. B, 31-Oct-11
1
Document Number: 91474
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG47N60E
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THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 40 0.33 UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Input Resistance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current IS ISM VSD trr Qrr IRRM TJ = 25 °C, IF = IS = 47 A, dI/dt = 100 A/μs, VR = 25 V MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Rg
VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 250 μA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 150 °C VGS = 10 V I D = 24 A VDS = 8 V, ID = 3 A
600 2 -
0.66 0.053 6.8 4810 230 5 147 36 60 24 11 94 13 0.65
4 ± 100 1 10 0.064 220 50 25 140 26 -
V V/°C V nA μA S
VGS = 0 V, VDS = 100 V, f = 1 MHz
pF
VGS = 10 V
ID = 47 A, VDS = 480 V
nC
VDD = 480 V, ID = 47 A, VGS = 10 V, Rg = 4.4 f = 1 MHz, open drain
ns
-
696 16 39
47 A 140 1.2 V ns μC A
G
S
TJ = 25 °C, IS = 47 A, VGS = 0 V
S11-2089 Rev. B, 31-Oct-11
2
Document Number: 91474
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG47N60E
www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
180
Vishay Siliconix
3.0
I D , Drain-to-Source Current (A)
160 140 120 100 80 60 40 20 0 0 5 10 15 20
5.0 V Top 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V Bottom 5.0 V
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 47 A
2.5
2.0
1.5
1.0
0.5
TJ = 25 °C
25 30
0.0 - 60 - 40 - 20
VGS = 10 V
0 20 40 60 80 100 120 140 160
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
120
Top 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V Bottom 5.0 V
TJ , Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
100 000
ID, Drain-to-Source Current (A)
100
10 000
Ciss
VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd
80
C, Capacitance (pF)
1000
Coss
60
100
40
Crss
10
20
0 0 5 10 15
TJ = 150 °C
20 25 30
1
0
100
200
300
400
500
600
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
180 24
V D S , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V DS = 480 V V DS = 300 V V DS = 120 V
I D , Drain-to-Source Current (A)
VGS , Gate-to-Source Voltage (V)
10 15 20 25
160 140 120 100 80 60 40 20 0 0 5
20
16
12
TJ = 150 °C
8
4
TJ = 25 °C
0 0 50 100 150 200 250 300
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics S11-2089 Rev. B, 31-Oct-11 3
Q G , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91474
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SiHG47N60E
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50 45
Vishay Siliconix
1000
ISD , Reverse Drain Current (A)
40 100
ID, Drain Current (A)
1.4
35 30 25 20 15 10
TJ = 150 °C
10
TJ = 25 °C
1
0.1 0.2 0.4 0.6 0.8 1
V GS = 0 V
1.2
5 0
VSD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
25
50
75
100
125
150
TJ, Case Temperature (°C) Fig. 9 - Maximum Drain Current vs. Case Temperature
725
Operation in this area limited by RDS(on)* 100
ID, Drain Current (A)
VDS , Drain-to-Source Breakdown Voltage (V)
1000
700 675 650 625 600
IDM Limited
10
100 µs 1 ms
1 TC = 25 °C TJ = 150 °C Single Pulse 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 10 ms BVDSS Limited
575
550 - 60 - 40 - 20
0
20
40
60
80 100 120 140 160
Fig. 8 - Maximum Safe Operating Area
TJ, Junction Temperature (°C) Fig. 10 - Temperature vs. Drain-to-Source Voltage
1
Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse
0.01 0.0001
0.001
0.01
0.1
1
Pulse Time (s) Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
S11-2089 Rev. B, 31-Oct-11 4 Document Number: 91474
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SiHG47N60E
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Vishay Siliconix
RD 10 V QG
VDS VGS RG
D.U.T. + - VDD QGS QGD
10 V
Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
VG
Fig. 12 - Switching Time Test Circuit
Charge Fig. 16 - Basic Gate Charge Waveform
Current regulator Same type as D.U.T.
50 kΩ
12 V
VDS 90 %
0.2 µF 0.3 µF
10 % VGS td(on) tr td(off) tf VGS
3 mA
+
D.U.T.
-
VDS
Fig. 13 - Switching Time Waveforms
L Vary tp to obtain required IAS RG VDS
IG ID Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
D.U.T IAS
+ -
V DD
10 V tp 0.01 Ω
Fig. 14 - Unclamped Inductive Test Circuit
VDS tp VDD VDS
IAS
Fig. 15 - Unclamped Inductive Waveforms
S11-2089 Rev. B, 31-Oct-11
5
Document Number: 91474
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG47N60E
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Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer
D.U.T.
+
-
-
+
Rg
• • • •
dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va
D.U.T. lSD waveform Reverse recovery current
Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple ≤ 5 % Note a. VGS = 5 V for logic level devices
ISD
Fig. 18 - For N-Channel
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S11-2089 Rev. B, 31-Oct-11
6
Document Number: 91474
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-247AC (HIGH VOLTAGE)
4 B 3 R/2 Q 2xR (2) 1 5 L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 Planting D DE E C C (c) c1 (b, b2, b4) View B (4) Section C - C, D - D, E - E (b1, b3, b5) Base metal C A 5 E1 0.01 M D B M View A - A 2 3 E E/2 S A2 A D2 5 D D Thermal pad 4 D1 A 7 ØP Ø k M DBM A (Datum B) ØP1
MILLIMETERS DIM. A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MIN. 4.65 2.21 1.50 0.99 0.99 1.65 1.65 2.59 2.59 0.38 0.38 19.71 13.08 MAX. 5.31 2.59 2.49 1.40 1.35 2.39 2.37 3.43 3.38 0.86 0.76 20.70 MIN.
INCHES MAX. 0.209 0.102 0.098 0.055 0.053 0.094 0.093 0.135 0.133 0.034 0.030 0.815 DIM. D2 E E1 e Øk L L1 N ØP Ø P1 Q R S
MILLIMETERS MIN. 0.51 15.29 13.72 5.46 BSC 0.254 14.20 3.71 16.10 4.29 MAX. 1.30 15.87 MIN.
INCHES MAX. 0.051 0.625 -
0.183 0.087 0.059 0.039 0.039 0.065 0.065 0.102 0.102 0.015 0.015 0.776 0.515
0.020 0.602 0.540
0.215 BSC 0.010 0.559 0.146 0.300 BSC 0.140 0.209 0.178 0.144 0.291 0.224 0.216 0.634 0.169
7.62 BSC 3.56 5.31 4.52 3.66 7.39 5.69 5.49
5.51 BSC
0.217 BSC
ECN: S-81920-Rev. A, 15-Sep-08 DWG: 5971 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
Document Number: 91360 Revision: 15-Sep-08
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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