SiHP30N60E
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Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 130 15 39 Single
D
FEATURES
650 0.125
• • • • • •
Low Figure-of-Merit (FOM) Ron x Qg Low Input Capacitance (Ciss) Reduced Switching and Conduction Losses Ultra Low Gate Charge (Qg) Avalanche Energy Rated (UIS) Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
APPLICATIONS
• • • • Server and Telecom Power Supplies Switch Mode Power Supplies (SMPS) Power Factor Correction Power Supplies (PFC) Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting - LED Lighting • Industrial - Welding - Induction Heating - Motor Drives • Battery Chargers • Renewable Energy - Solar (PV Inverters)
TO-220AB
G
G
D
S S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free TO-220AB SiHP30N60E-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) Continuous Drain Current (TJ = 150 °C) Pulsed Drain Currenta Linear Derating Factor Avalanche Energy (repetitive) Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dtd Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A. c. 1.6 mm from case. d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. TJ = 125 °C EAR EAS PD TJ, Tstg dV/dt VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 600 ± 20 30 29 18 65 2 0.25 690 250 - 55 to + 150 37 18 300c W/°C mJ W °C V/ns °C A V UNIT
S11-2091 Rev. C, 31-Oct-11
1
Document Number: 91456
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
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Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 62 0.5 UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductancea Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Input Resistance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current IS ISM VSD trr Qrr IRRM TJ = 25 °C, IF = IS = 15 A, dI/dt = 100 A/μs, VR = 20 V MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Rg
VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 250 μA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 600 V, VGS = 0 V VDS = 600 V, VGS = 0 V, TJ = 150 °C VGS = 10 V I D = 15 A VDS = 8 V, ID = 3 A
600 2.0 -
0.64 0.104 5.4 2600 138 3 85 15 39 19 32 63 36 0.63
4.0 ± 100 1 100 0.125 130 40 65 95 75 -
V V/°C V nA μA S
VGS = 0 V, VDS = 100 V, f = 1.0 MHz
pF
VGS = 10 V
ID = 15 A, VDS = 480 V
nC
VDD = 380 V, ID = 15 A, VGS = 10 V, Rg = 4.7 f = 1 MHz, open drain
ns
-
402 7 32
29 A 65 1.3 605 15 65 V ns μC A
G
S
TJ = 25 °C, IS = 15 A, VGS = 0 V
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
S11-2091 Rev. C, 31-Oct-11
2
Document Number: 91456
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80 70 60 ID - Drain Current (A) 50 40 30 20 10 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 5V 0 0 5 10 15 20 25 VGS, Gate-to-Source Voltage (V)
TJ = 25 °C 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V TOP
Vishay Siliconix
80
60 ID, Drain Current (A)
TJ = 25 °C
40
TJ = 150 °C
20
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
50
3.0 ID = 15 A VGS = 10 V 2.0
40 ID - Drain Current (A)
2.5
TOP
30
RDS(on) - On-Resistance (Normalized)
20
15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V
1.5
1.0
10
TJ = 150 °C
0.5
0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V)
0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S11-2091 Rev. C, 31-Oct-11
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Document Number: 91456
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
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Vishay Siliconix
1000
10 000 Ciss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd x Cds shorted Crss = Cgd Coss = Cds + Cgd Coss
Operation in this area limited by RDS(on)* 100
ID, Drain Current (A)
C - Capacitance (pF)
1000
100
10
100 µs
10
1
TC = 25 °C TJ = 150 °C Single Pulse
1 ms 10 ms
Crss 1 0 100 200 300 400 500 600 VDS - Drain-to-Source Voltage (V) 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
24 ID = 15 A VGS - Gate-to-Source Voltage (V) 20 VDS = 120 V 16 VDS = 480 V ID, Drain Current (A) 20.0 VDS = 300 V 25.0 30.0
Fig. 8 - Maximum Safe Operating Area
12
15.0
8
10.0
4
5.0
0 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC)
0 25 50 75 100 125 150 TC - Temperature (°C)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
725 700 675 650 625 600 575
Fig. 9 - Maximum Drain Current vs. Case Temperature
TJ = 150 °C
10
1 TJ = 25 °C
0.1
0.01
VDS, Drain-to-Source Breakdown Voltage (V)
100 IS - Source Current (A)
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
550 - 60 - 40 - 20
0
20
40
60
80 100 120 140 160
VSD - Source-to-Drain Voltage (V)
TJ - Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 10 - Temperature vs. Drain-to-Source Voltage
S11-2091 Rev. C, 31-Oct-11
4
Document Number: 91456
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
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Vishay Siliconix
1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 0.0001 0.001 0.01 Square Wave Pulse Duration (s) 0.1 1
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
VDS VGS RG RD
VDS tp VDD
+ - VDD
D.U.T.
VDS
10 V
Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
IAS
Fig. 15 - Unclamped Inductive Waveforms
Fig. 12 - Switching Time Test Circuit
VDS 90 %
10 V QGS 10 % VGS td(on) tr td(off) tf
QG
QGD
VG
Fig. 13 - Switching Time Waveforms
Charge
Fig. 16 - Basic Gate Charge Waveform
Current regulator Same type as D.U.T.
L Vary tp to obtain required IAS RG VDS
D.U.T IAS
+ -
V DD
12 V
50 kΩ 0.2 µF 0.3 µF
10 V tp 0.01 Ω
VGS
3 mA
+
D.U.T.
-
VDS
Fig. 14 - Unclamped Inductive Test Circuit
IG ID Current sampling resistors
Fig. 17 - Gate Charge Test Circuit S11-2091 Rev. C, 31-Oct-11 Document Number: 91456
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP30N60E
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Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer
D.U.T.
+
-
-
+
Rg
• • • •
dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va
D.U.T. lSD waveform Reverse recovery current
Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple ≤ 5 % Note a. VGS = 5 V for logic level devices
ISD
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91456.
S11-2091 Rev. C, 31-Oct-11
6
Document Number: 91456
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-220AB
E A F ØP Q H(1)
MILLIMETERS DIM. A b b(1) c D E MIN. 4.25 0.69 1.20 0.36 14.85 10.04 2.41 4.88 1.14 6.09 2.41 13.35 3.32 3.54 2.60 MAX. 4.65 1.01 1.73 0.61 15.49 10.51 2.67 5.28 1.40 6.48 2.92 14.02 3.82 3.94 3.00 MIN. 0.167 0.027 0.047 0.014 0.585 0.395 0.095 0.192 0.045 0.240 0.095 0.526 0.131 0.139 0.102
INCHES MAX. 0.183 0.040 0.068 0.024 0.610 0.414 0.105 0.208 0.055 0.255 0.115 0.552 0.150 0.155 0.118
D
e e(1) F H(1)
1
L(1)
2
3
J(1) L L(1)
*M b(1)
ØP Q
ECN: X10-0416-Rev. M, 01-Nov-10 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM
C
L
b e J(1) e(1)
Document Number: 71195 Revison: 01-Nov-10
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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