SIP12101DH-T1

SiP12101 Vishay Siliconix High Performance Step-Down DC-DC Converter With Adjustable Output Voltage DESCRIPTION The SiP12101 is a high efficiency 600 mA step down converter with internal low on resistance power MOSFET switch and synchronous rectifier transistors. It is designed to convert one cell Lilon battery or three cell alkaline battery voltages to an adjustable dc output. The integrated high frequency error amplifier with internal compensation minimizes external components. 2 MHz switching permits use of small external inductor and capacitor sizes allowing one of the smallest solutions. The SiP12101 is available in the 10 pin MSOP and is specified to operate over the industrial temperature range of - 40 °C to 85 °C. FEATURES • • • • • • • • • • • • • 2 MHz PWM operation Integrated MOSFET switches 2.6 V to 6.0 V input voltage range Minimal number of external components Up to 96 % conversion efficiency 600 mA load capability 100 % cuty cycle allows low dropout Integrated compensation circuit Over-current protection Shutdown current < 2 mA Thermal shutdown Integrated UVLO 10 pin MSOP APPLICATIONS • • • • • • • • PDAs/palmtop PCs LCD podules Portable image scanners GPS receivers Smart phones MP3 players 3G cell phone Digital cameras TYPICAL APPLICATIONS CIRCUIT BATTERY CIN 10 µF VIN VDD VDD LX 2.2 µH VOUT SiP12101 PGND COUT 4.7 µF R1 FB ENABLE VDD SD VDD REF AGND REF R2 Document Number: 73057 S09-1453-Rev. B, 03-Aug-09 www.vishay.com 1 SiP12101 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Voltages Referenced to AGND = 0 V VIN, VDD Lx, SD, FB, CREF GND ESD Rating Storage Temperature Operating Junction Temperature Power Dissipation (Package)a Thermal Impedance (ΘJA) Peak Inductor Current Notes: a. Device mounted with all leads soldered or welded to PC board. b. Derate 7.4 mW/°C above 85 °C. c. Derate 14 mW/°C above 85 °C. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Limit 6.2 - 0.3 to 6.2 (or to VDD + 0.3 whichever is less) - 0.3 to + 0.3 2 - 65 to 125 150 10-pin MSOPb 10-pin MLP33 10-Pin MSOP 481 915 135 1.8 Unit V kV °C mW °C/W A RECOMMENDED OPERATING RANGE Parameter VIN Range CIN COUT Inductor Load Current Limit 2.6 to 5.5 10 µF ceramic 4.7 µF ceramic 2.2 0 to 600 µH mA Unit V SPECIFICATIONS Test Conditions Unless Specified - 40 °C to 85 °C, VIN = VDD, CIN = 10 µF, COUT = 4.7 µF L = 2.2 µH, 2.6 V ≤ VIN ≤ 5.5 V, R1 = 11.3 kΩ, R2 = 20 kΩ VIN rising Limits Min.a 2.3 0.1 VSDH VSDL ten ISD fOSC TA = 25 °C TA = - 40 °C to 85 °C VIN = 2.6 V to 5.5 VDC VFB = 1.25 V -1 Settle within ± 2 % accuracy SD rising tr < 1 µ s Input at VIN 1.6 1.185 1.170 60 0.01 1 2 1.215 2.4 1.245 1.260 RL= 3.3 Ω RL= 51 Ω 100 1.6 0.4 100 Typ.b Max.a 2.5 Unit Parameter Under Voltage Lockout (UVLO) Under Voltage Lockout (turn-on) Hysteresis Shutdown (SD) Logic High Logic Low Delay to Outputc Pull Down Oscillator Frequency Error Amplifier (FB Pin) FB Voltage Accuracy Power Supply Rejection Input Bias Current Symbol V V µs µA MHz VFB PSRR IFB V db µA www.vishay.com 2 Document Number: 73057 S09-1453-Rev. B, 03-Aug-09 SiP12101 Vishay Siliconix SPECIFICATIONS Test Conditions Unless Specified - 40 °C to 85 °C, VIN = VDD, CIN = 10 µF, COUT = 4.7 µF L = 2.2 µH, 2.6 V ≤ VIN ≤ 5.5 V, R1 = 11.3 kΩ, R2 = 20 kΩ VIN = 3.6 V VIN = 2.6 V, IOUT = 600 mA VIN = 3.6 V, VOUT = 1.9 V at 25 °C IOUT = 30 mA to 600 mA VOUT = 3.0 V, VIN = 3.5 V to 5.5 V ILpk RDS(on) VIN = 3.6 V 0.05 Ω COUT(ESR) VIN = 3.6 V, VOUT = 3.3 V IOUT ≥ 30 mA ISUPPLY (VDD & VIN) ISD TJ(S/D) IOUT = 600 mA IOUT = 600 mA 20 Limits Min.a 600 190 300 0.5 ± 0.1 1500 250 250 60 90 300 Typ.b Max.a Unit mA mV kHz % %/V mA mΩ mVp-p % kHz Parameter Converter Operation Maximum Output Current Dropout Voltage e Symbol ILOAD VDD BW Closed Loop Bandwidth Load Regulationc Line Regulation Maximum Inductor Peak Current Limit On Resistance - P-Channel and N-Channel Output Ripple Voltage Efficiency Frequency Supply Current Input Supply Current Shutdown Supply Current Thermal Shutdown Thermal Shutdown Temperaturec Thermal Hysteresisc IOUT = 0 mA, VIN = 3.6 V, (not switching, FB = GND) SD = Low 450 750 2 µA 165 20 °C Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. b. Typical values are for DESIGN AID ONLY, not guaranteed or subject to production testing. c. Guaranteed by design. d. Settling times, ts, apply after ten. e. Bypass is a device mode of operation, in which, the device is in 100 % duty cycle. PIN CONFIGURATION MSOP-10 LX AGND FB VDD REF 1 2 3 4 5 10 9 8 7 6 PGND VIN AGND SD VDD Top View Document Number: 73057 S09-1453-Rev. B, 03-Aug-09 www.vishay.com 3 SiP12101 Vishay Siliconix PIN DESCRIPTION Pin Number 1 2 3 4 5 6 7 8 9 10 Name LX AGND FB VDD REF VDD SD AGND VIN PGND Function Inductor connection Low power analog ground Output voltage feedback Input supply voltage for the analog circuit. Internal reference, no connection should be made to this pin. Input supply voltage for the analog circuit. Logic low disables IC and reduces quiescent current to below 2 µA Must be connected to AGND. Input supply voltage Low impedance power ground ORDERING INFORMATION Part Number SiP12101DH-T1 Additional voltage options are available. Eval Kit SiP12101DB Temperature Range - 40 °C to 85 °C Board Surface Mount Marking 2101 Temperature - 40 °C to 85 °C Package MSOP-10 FUNCTIONAL BLOCK DIAGRAM VDD VDD SiP12101 VIN PMOS Current Sense Error Amplifier FB REF + Clamp + PWM Comparator PWM LX To IC Bias Voltage Reference, UVLO 2 MHz Oscillator AGND AGND SD PGND www.vishay.com 4 Document Number: 73057 S09-1453-Rev. B, 03-Aug-09 SiP12101 Vishay Siliconix DETAIL OPERATION General The SiP12101 is a high efficiency synchronous dc-dc converter that is ideally suited for lithium ion battery or three cell alkaline applications, as well as step-down of 3.3 V or 5.0 V supplies. The major blocks of the SiP12101 are shown in the Functional Block Diagram. The 0.25 Ω internal MOSFETs switching at a frequency of 2 MHz minimize PC board space while providing high conversion efficiency and performance. The high frequency error-amplifier with built-in loop compensation minimizes external components and provides rapid output settling times of < 30 µs. Sensing of the inductor current for control is accomplished internally without power wasting resistors. Start-Up When voltage is applied to VIN and VDD, the under-voltage lockout (UVLO) circuit prevents the oscillator and control circuitry from turning on until the voltage on the exceeds 2.4 V. With a typical UVLO hysteresis of 0.1 V, the converter operates continuously until the voltage on VIN drops below 2.3 V, whereupon the converter shuts down. This hysteresis prevents false start-stop cycling as the input voltage approaches the UVLO switching threshold. The start-up sequence occurs after SD switches from LOW to HIGH with VIN applied, or after VIN rises above the UVLO threshold and SD is a logic HIGH. PWM SiP12101 operates as a 2 MHz fixed frequency voltage mode converter. An NMOS synchronous rectification MOSFET transistor provides very high conversion efficiency for large load currents by minimizing the conduction losses. Output load currents can range from 0 to 600 mA. The error amplifier and comparator control the duty cycle of the PMOS MOSFET to continuously force the REF pin and FB pin voltages to be equal. As the input-to-output voltage difference drops, the duty cycle of the PMOS MOSFET can reach 100 % to allow system designers to extract the maximum stored energy from the battery. The dropout voltage is 190 mV at 600 mA. During each cycle, the PMOS switch current is limited to a maximum of 1.5 A (typical) thereby protecting the IC while continuing to force maximum current into the load. Oscillator The internal oscillator provides for a fixed 2 MHz switching frequency. Dynamic Output Voltage Control (REF) The SiP12101 is designed with an adjustable output voltage which has a change of VFB to VIN - VDROP. VOUT is defined according to the following relationship: Converter Shutdown (SD pin) With logic LOW level on the SD pin, the SiP12101 is shutdown. Shutdown reduces current consumption to less than 2 µA by shutting off all of the internal circuits. Both the PMOS and NMOS transistors are turned off. A logic HIGH enables the IC to start up as described in "Start-up" section. Thermal Shutdown The SiP12101 includes thermal shutdown circuitry, which turns off the regulator when the junction temperature exceeds 165 °C. Once the junction temperature drops below 145 °C, the regulator is enabled. If the condition causing the over temperature, the SiP12101 begins thermal cycling, turning the regulator on and off in response to junction temperature. Restart from a thermal shutdown condition is the same as described in the "Start-up" section. VOUT = ( 1+ R1 × VFB R2 www.vishay.com 5 ) Document Number: 73057 S09-1453-Rev. B, 03-Aug-09 SiP12101 Vishay Siliconix APPLICATIONS CIRCUIT BATT VIN VDD CI N 10 µF C1 C2 VDD LX COUT 4.7 µF PGND 2.2 µH VOUT SiP12101 R1 FB ENABLE SD REF AGND AGND REF R2 CIN = 10 µF, Ceramic, Murata GRM42-2X5R106K16 C1, C2 = 0.01 µF, Vishay VJ0603Y 104KXXAT COUT = 4.7 µF, Ceramic, Murata GRM42-6X5R475K16 R1 = 8.2 kΩ, Vishay CRCW06031132F R2 = 20 kΩ, Vishay CRCW06032002F L1 = 2.2 µH, Toko A914BYW-2R2M www.vishay.com 6 Document Number: 73057 S09-1453-Rev. B, 03-Aug-09 SiP12101 Vishay Siliconix TYPICAL CHARACTERISTICS VSDH SD tr VSDL tf ten VOUT Undefined (Load Dependent) Time o Indicates VOUT settles to ± 2 % of the final value. Figure 1. PWM Mode VOUT Settling 200 20 VIN = 3.6 V VOUT = 1.9 V COUT = 4.7 µF Dropout Voltage (mV) VIN = 2.6 V 120 VIN = 3.6 V VOUT Ripple (mVp-p) 160 16 12 80 VIN = 5.5 V 40 8 4 PWM 0 0 100 200 300 400 500 600 0 0 30 60 90 120 150 Load Current (mA) Load Current (mA) Dropout Voltage vs. ILOAD VOUT Ripple Document Number: 73057 S09-1453-Rev. B, 03-Aug-09 www.vishay.com 7 SiP12101 Vishay Siliconix TYPICAL SWITCHING WAVEFORMS (VIN = 3.6 V, VOUT = 3.0 V) VLX, 5 V/div VLX, 2 V/div Inductor Current 500 mA/div Inductor Current 500 mA/div VOUT (AC-Coupled) 10 mV/div 200 ns/div 200 ns/div VOUT (AC-Coupled) 10 mV/div Heavy-Load Switching Waveforms IOUT = 600 mA Medium-Load Switching Waveforms IOUT = 300 mA VLX, 5 V/div Inductor Current 200 mA/div VOUT (AC-Coupled) 10 mV/div 200 ns/div Light-Load Switching Waveforms IOUT = 0 mA www.vishay.com 8 Document Number: 73057 S09-1453-Rev. B, 03-Aug-09 SiP12101 Vishay Siliconix TYPICAL SWITCHING WAVEFORMS (VIN = 3.6 V, VOUT = 1.9 V) VLX, 5 V/div Inductor Current 500 mA/div VLX, 5 V/div Inductor Current 500 mA/div VOUT (AC-Coupled) 10 mV/div VOUT (AC-Coupled) 10 mV/div 200 ns/div 200 ns/div Heavy-Load Switching Waveforms IOUT = 600 mA Medium-Load Switching Waveforms IOUT = 300 mA VLX, 5 V/div Inductor Current 200 mA/div VOUT (AC-Coupled) 10 mV/div 200 ns/div Light-Load Switching Waveforms IOUT = 0 mA Document Number: 73057 S09-1453-Rev. B, 03-Aug-09 www.vishay.com 9 SiP12101 Vishay Siliconix TYPICAL START-UP AND SHUTDOWN TRANSIENT WAVEFORMS (VIN = 3.6 V, VOUT = 1.9 V) VIN, VSD, 1 V/div VSD, 1 V/div VOUT, 500 mV/div VOUT, 500 mV/div 20 µs/div 20 µs/div Start-Up, RLOAD = 4 Ω Start-Up, VIN = VSD = 3.6 V, RLOAD = 4 Ω VSD, 1 V/div VSD 1 V/div VOUT, 500 mV/div VOUT, 500 mV/div 200 µs/div 20 µs/div Shutdown, RLOAD = 4 Ω Enable Switching, RLOAD = 4 Ω www.vishay.com 10 Document Number: 73057 S09-1453-Rev. B, 03-Aug-09 SiP12101 Vishay Siliconix TYPICAL LOAD TRANSIENT WAVEFORMS (VIN = 3.6 V, VOUT = 1.9 V) ILOAD, 200 mA /div VOUT (AC-Coupled) 50 mV/div 10 µs/div Load Transient ILOAD = 30 to 500 mA, L = 2.2 µH Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73057. Document Number: 73057 S09-1453-Rev. B, 03-Aug-09 www.vishay.com 11 Package Information Vishay Siliconix MSOP: JEDEC Part Number: MO-187, (Variation AA and BA) 5 10-LEADS (POWER IC ONLY) (N/2) Tips) 2X A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 0.50 0.60 12 Top View e1 N/2 b b1 With Plating A c1 0.10 C 0.08 M C B S AS 7 e See Detail “B” c 6 -H- D 3 A1 -A- Seating Plane Base Metal Section “C-C” Scale: 100/1 (See Note 8) 0.25 BSC Parting Line Side View See Detail “A” C C 0.07 R. Min 2 Places Seating Plane A2 0.05 S ς E1 L4 T 0.95 Detail “A” (Scale: 30/1) -C- -B3 End View NOTES: 1. 2. 3. Die thickness allowable is 0.203"0.0127. Dimensioning and tolerances per ANSI.Y14.5M-1994. Dimensions “D” and “E1” do not include mold flash or protrusions, and are measured at Datum plane -H- , mold flash or protrusions shall not exceed 0.15 mm per side. Dimension is the length of terminal for soldering to a substrate. Terminal positions are shown for reference only. Formed leads shall be planar with respect to one another within 0.10 mm at seating plane. The lead width dimension does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the lead width dimension at maximum material condition. Dambar cannot be located on the lower radius or the lead foot. Minimum space between protrusions and an adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip. Controlling dimension: millimeters. N = 10L MILLIMETERS Dim A A1 A2 b b1 c c1 D E E1 e e1 L N T Min − 0.05 0.75 0.17 0.17 0.13 0.13 Nom − 0.10 0.85 − 0.20 − 0.15 3.00 BSC 4.90 BSC Max 1.10 0.15 0.95 0.27 0.23 0.23 0.18 Note 4. 5. 6. 7. 8 8 3 3.10 3 2.90 3.00 0.50 BSC 2.00 BSC 8. 9. 10. This part is compliant with JEDEC registration MO-187, variation AA and BA. 11. Datums -A- and -B- to be determined Datum plane -H- . 12. Exposed pad area in bottom side is the same as teh leadframe pad size. 0.40 0_ 0.55 10 4_ 0.70 6_ 4 5 ECN: S-40082—Rev. A, 02-Feb-04 DWG: 5922 www.vishay.com Document Number: 72817 28-Jan-04 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1