SiP32452, SiP32453
Vishay Siliconix
1 V, 55 m Load Switch in MICRO FOOT®
DESCRIPTION
SiP32452 and SiP32453 are n-channel integrated high side load switches that operate from 0.9 V to 2.5 V input voltage range. SiP32452 and SiP32453 has low input logic control threshold that can interface with low voltage control GPIO directly without extra level shift or driver. There is a pull down at this EN logic control pin. Turn on time is fast in less than 25 µs typically for input voltage of 1.2 V or higher. SiP32452 has fast turn off delay time of less than 1 µs while SiP32453 features a guaranteed turn off delay of greater than 30 µs, typically 90 µs. Both SiP32452 and SiP32453 are available in compact wafer level CSP package, MICRO FOOT® 4 bumps 0.8 mm x 0.8 mm with 0.4 mm pitch.
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • Low input voltage, 0.9 V to 2.5 V • Low RON, 55 m typical • Fast turn on time • Low logic control with hysteresis • Reverse current blocking when disabled • Integrated pull down at EN pin • 4-bump MICRO FOOT® package
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• • • • • • • • Battery operated devices Smart phones GPS and PMP Computer Medical and healthcare equipment Industrial and instrument Cellular phones and portable media players Game console
TYPICAL APPLICATION CIRCUIT
VIN
IN
OUT
VOUT
SiP32452, SiP32453
C IN 4.7 µF EN EN GND C OUT 0.1 µF
GND
GND
Figure 1 - SiP32452 and SiP32453 Typical Application Circuit
Document Number: 63315 S11-1695-Rev. B, 22-Aug-11
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SiP32452, SiP32453
Vishay Siliconix
ORDERING INFORMATION
Temperature Range - 40 °C to 85 °C Package MICRO FOOT®: 4 Bumps (2 x 2, 0.4 mm Pitch, 208 µm Bump Height) Marking AB AC Part Number SiP32452DB-T2-GE1 SiP32453DB-T2-GE1
Note: GE1 denotes halogen-free and RoHS compliant
ABSOLUTE MAXIMUM RATINGS
Parameter Supply Input Voltage (VIN) Enable Input Voltage (VEN) Output Voltage (VOUT) Maximum Continuous Switch Current (Imax.) Maximum Pulsed Current (IDM) VIN (Pulsed at 1 ms, 10 % Duty Cycle) ESD Rating (HBM) Junction Temperature (TJ) Thermal Resistance (JA)a Power Dissipation (PD)a Notes: a. Device mounted with all leads and power pad soldered or welded to PC board. b. Derate 3.6 mW/°C above TA = 70 °C. Limit - 0.3 to 2.75 - 0.3 to 2.75 - 0.3 to 2.75 1.2 2 4000 - 40 to 125 280 196 A V °C °C/W mW V Unit
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter Input Voltage Range (VIN) Operating Temperature Range Limit 0.9 to 2.5 - 40 to 85 Unit V °C
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Document Number: 63315 S11-1695-Rev. B, 22-Aug-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32452, SiP32453
Vishay Siliconix
SPECIFICATIONS
Test Conditions Unless Specified VIN = 1 V, TA = - 40 °C to 85 °C (Typical values are at TA = 25 °C) VIN = 1.2 V, VEN = VIN, OUT = open VIN = 2.5 V, VEN = VIN, OUT = open EN = GND, OUT = open EN = GND, OUT = 0 V VOUT = 2.5 V, VIN = 0.9 V, VEN = 0 V VIN = 1 V, IL = 200 mA, TA = 25 °C On-Resistance RDS(on) VIN = 1.2 V, IL = 200 mA, TA = 25 °C VIN = 1.8 V, IL = 200 mA, TA = 25 °C VIN = 2.5 V, IL = 200 mA, TA = 25 °C On-Resistance Temp.-Coefficient EN Input Low Voltage
c c
Limits Min.a 0.9 1.5 10 5 30 30 Typ.b 10 34 0.001 56 55 54 54 3900 10 0.4 0.05 20 9.8 0.25 0.15 98 86 Max.a 2.5 15 60 1 30 10 65 65 65 65 0.1 1 15 1 1 30 20 1 1 150 150 µs ppm/°C V m µA Unit V
Parameter Operating Voltage
c
Symbol VIN IQ IQ(off) IDS(off) IRB
Quiescent Current Off Supply Current Off Switch Current Reverse Blocking Current
TCRDS VIL VIH IEN td(on) tr VIN = 1 V VIN = 2.5 V VIN = 2.5 V, VEN = 0 V VIN = 2.5 V, VEN = 2.5 V Both, VIN = 1.2 V Both, VIN = 2.5 V Both, VIN = 1.2 V Both, VIN = 2.5 V SiP32452, VIN = 1.2 V SiP32452, VIN = 2.5 V SiP32453, VIN = 1.2 V SiP32453, VIN = 2.5 V RLOAD = 10 , CL = 0.1 µF TA = 25 °C
EN Input High Voltage EN Input Leakage
µA
Output Turn-On Delay Time Output Turn-On Rise Time
Output Turn-Off Delay Time
td(off)
Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For VIN outside this range consult typical EN threshold curve.
Document Number: 63315 S11-1695-Rev. B, 22-Aug-11
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SiP32452, SiP32453
Vishay Siliconix
PIN CONFIGURATION
Index-Bump A1 1 IN 2 OUT 2 OUT 1 IN A
A
W A
EN
B
B
GND GND EN
B
Backside
Bumpside
Figure 2 - MICRO FOOT® 2 x 2 Package
PIN DESCRIPTION
Pin Number A1 A2 B1 B2 Name IN OUT EN GND Function This pin is the n-channel MOSFET drain connection. Bypass to ground through a 4.7 µF capacitor. This pin is the n-channel MOSFET source connection. Bypass to ground through a 0.1 µF capacitor. Enable input Ground connection
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
45 40 50 45 VIN = 2.5 V
I Q - Quiescent Current (µA)
35 30 25 20 15 10 5 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 V IN (V)
IQ - Quiescent Current (µA)
40 35 30 25 20 15 VIN = 1.2 V 10 5 0 - 40 - 20 0 20 40 60 80 100 Temperature (°C) VIN = 1 V
Figure 3 - Quiescent Current vs. Input Voltage
12
1000 100 IQ(OFF) - Off Supply Current (nA) 10
Figure 4 - Quiescent Current vs. Temperature
IQ(OFF) - Off Supply Current (nA)
10
8
VIN = 2.5 V 1 0.1 0.01 VIN = 1 V 0.001 VIN = 1.2 V
6
4
2
0 0.8 1.2 1.6
VIN (V)
2.0
2.4
2.8
0.0001 - 40
- 20
0
20
40
60
80
100
Temperature (°C)
Figure 5 - Off Supply Current vs. Input Voltage www.vishay.com 4
Figure 6 - Off Supply Current vs. Temperature Document Number: 63315 S11-1695-Rev. B, 22-Aug-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32452, SiP32453
Vishay Siliconix
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
1000 900 IDS(off) - Off Switch Current (nA) 800 700 600 500 400 300 200 0.8 1.2 1.6 VIN (V) 2 2.4 2.8
0 - 40 - 20 0 20 40 60 80 100 IDS(off) - Off Switch Current (nA) 100 000 VIN = 2.5 V
10 000
1000
VIN = 1.2 V
100
10
VIN = 1 V
1
Temperature (°C)
Figure 7 - Off Switch Current vs. Input Voltage
66 64
Figure 8 - Off Switch Current vs. Temperature
75 VIN = 1.2 V 70 RDS - On-Resistance (mΩ) 65 60 55 50 45 40 - 40 IO = 200 mA
RDS - On-Resistance (mΩ)
62 60 58 56 54 52 50 0.8 1.2 1.6 2.0 2.4 2.8 IO = 0.2 A IO = 0.5 A IO = 1.2 A
- 20
0
20
40
60
80
100
VIN (V)
Temperature (°C)
Figure 9 - RDS(on) vs. VIN
12 VIN = 2.5 V 10 IEN - EN Current (µA)
2.0 1.8 1.6 1.4 I IN (nA) 1.2 1.0 0.8
Figure 10 - RDS(on) vs. Temperature
VIN = 0.9 V
8
6
4
0.6 0.4 0.2
2
0 0 0.5 1 VEN (V) 1.5 2 2.5
0 0.8 1 1.2 1.4 1.6 1.8 2 VOUT (V) 2.2 2.4 2.6 2.8
Figure 11 - IEN vs. VEN
Figure 12 - Reverse Blocking Current vs. Output Voltage
Document Number: 63315 S11-1695-Rev. B, 22-Aug-11
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SiP32452, SiP32453
Vishay Siliconix
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
100 VOUT = 2.5 V VIN = 0.9 V 80
1.6 1.4
EN Threshold Voltage (V)
1.2 1.0 VIH 0.8 VIL 0.6 0.4 0.2
I IN (nA)
60
40
20
0 - 40
0.0
- 20 0 20 40 60 80 100
0.8 1.0
1.2
1.4
1.6
1.8 VIN (V)
2.0
2.2
2.4
2.6
2.8
Temperature (°C)
Figure 13 - Reverse Blocking Current vs. Temperature
Figure 14 - EN Threshold Voltage vs. Input Voltage
0.100 0.095 VIN = 2.5 V CL = 0.1 µF RL = 10 Ω
14 13 tr - Rise Switching Time (µs) 12 11 10 9 8 7 6 5 VIN = 2.5 V CL = 0.1 µF RL = 10 Ω
td(on) - Turn-On Delay Time (µs)
0.090 0.085 0.080 0.075 0.070 0.065 0.060 0.055 0.050 - 40
- 20
0
20
40
60
80
100
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Temperature (°C)
Figure 15 - Turn-On Delay Time vs. Temperature
Figure 16 - Rise Time vs. Temperature
0.30 SiP32452 VIN = 2.5 V CL = 0.1 µF RL = 10 Ω
120 SiP32453 VIN = 2.5 V CL = 0.1 µF RL = 10 Ω
td(off) - Turn Off Delay Time (µs)
0.25
0.20
td(off) - Turn Off Delay Time (µs) 0 20 40 60 80 100
110
100
0.15
90
0.10
80
0.05
70
0.00 - 40
- 20
60 - 40
- 20
0
20
40
60
80
100
Temperature (°C)
Temperature (°C)
Figure 17 - Turn-Off Delay Time vs. Temperature
Figure 18 - Turn-Off Delay Time vs. Temperature
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Document Number: 63315 S11-1695-Rev. B, 22-Aug-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32452, SiP32453
Vishay Siliconix
TYPICAL WAVEFORMS
Figure 19 - Turn-On Time (VIN = 1.2 V)
Figure 20 - Turn-On Time (VIN = 2.5 V)
Figure 21 - SiP32452 Turn-Off Time (VIN = 1.2 V)
Figure 22 - SiP32452 Turn-Off Time (VIN = 2.5 V)
Figure 23 - SiP32453 Turn-Off Time (VIN = 1.2 V)
Figure 24 - SiP32453 Turn-Off Time (VIN = 2.5 V)
BLOCK DIAGRAM
IN
OUT
EN
Control Logic
Charge Pump
GND
Figure 25 - Functional Block Diagram
Document Number: 63315 S11-1695-Rev. B, 22-Aug-11
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SiP32452, SiP32453
Vishay Siliconix
DETAILED DESCRIPTION
SiP32452 and SiP32453 are n-channel power MOSFET designed as high side load switch. Once enable the device charge pumps the gate of the power MOSFET to a constant gate to source voltage for fast turn on time. The mostly constant gate to source voltage keeps the on resistance low through out the input voltage range. When disable, the SiP32452 pulls the gate of the output n-channel low right away for a fast turn off delay while there is a build-in turn off delay for the SiP32453. The turn off delay for the SiP32453 is guaranteed to be at least 30 µs. Because the body of the output n-channel is always connected to GND, it prevents the current from going back to the input in case the output voltage is higher than the output.
P (max.) = T J (max.) - T A θJ- A = 125 - TA 280
APPLICATION INFORMATION
Input Capacitor While a bypass capacitor on the input is not required, a 4.7 µF or larger capacitor for CIN is recommended in almost all applications. The bypass capacitor should be placed as physically close as possible to the input pin to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 µF capacitor across VOUT and GND is recommended to insure proper slew operation. There is inrush current through the output MOSFET and the magnitude of the inrush current depends on the output capacitor, the bigger the COUT the higher the inrush current. There are no ESR or capacitor type requirement. Enable The EN pin is compatible with CMOS logic voltage levels. It requires at least 0.1 V or below to fully shut down the device and 1.5 V or above to fully turn on the device. Protection Against Reverse Voltage Condition Both the SiP32452 and SiP32453 can block the output current from going to the input in case where the output voltage is higher than the input voltage when the main switch is off. Thermal Considerations These devices are designed to maintain a constant output load current. Due to physical limitations of the layout and assembly of the device the maximum switch current is 1.2 A as stated in the Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation (and a thermal resistance of 280 °C/W) the device should be connected to a heat sink on the printed circuit board. The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ(max.) = 125 °C, the junction-to-ambient thermal resistance, J-A = 280 °C/W, and the ambient temperature, TA, which may be formulaically expressed as:
It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 196 mW. So long as the load current is below the 1.2 A limit, the maximum continuous switch current becomes a function two things: the package power dissipation and the RDS(ON) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C. The worst case RDS(ON) at 25 °C is 65 m. The RDS(ON) at 70 °C can be extrapolated from this data using the following formula: RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x T) Where TC is 3900 ppm/°C. Continuing with the calculation we have RDS(ON) (at 70 °C) = 65 m x (1 + 0.0039 x (70 °C - 25 °C)) = 76.4 m The maximum current limit is then determined by
P (max.) I LOAD (max.) < R DS(ON )
which in case is 1.6 A. Under the stated input voltage condition, if the 1.6 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. To avoid possible permanent damage to the device and keep a reasonable design margin, it is recommended to operate the device maximum up to 1.2 A only as listed in the Absolute Maximum Ratings table.
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Document Number: 63315 S11-1695-Rev. B, 22-Aug-11
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SiP32452, SiP32453
Vishay Siliconix
PACKAGE OUTLINE MICRO FOOT®: 4 Bumps (2 x 2, 0.4 mm Pitch, 208 µm Bump Height)
Mark on backside of die
Index-Bump A1 1 2 2 1
A 0.4 4 x Ø 0.150 to 0.200 Solder mask dia. - Pad diameter + 0.1
W
4xØb
A e B e D D A
B
A
B
0.4 Recommended Land Pattern All dimensions in millimeters
Note 3
Bump Note 2
Dimension A A1 b e D
MILLIMETERS Min. 0.515 0.250 0.720 Nom. 0.530 0.208 0.260 0.400 0.760 0.800 0.0182 0.270 0.0098 MAX. 0.545 Min. 0.0202
INCHES Nom. 0.0208 0.0081 0.0102 0.0157 0.0193 0.0203 0.0106 MAX. 0.0214
Notes: 1. Laser mark on the backside surface of die. 2. Bumps are SAC396. 3. 0.050 max. coplanarity.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63315
Document Number: 63315 S11-1695-Rev. B, 22-Aug-11
A1
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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