SIP41109DB

SiP41109/41110 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion FEATURES D D D D D D D D D PWM With Tri-State Enable 12-V Low-Side Gate Drive (SiP41109) 8-V Low-Side Gate Drive (SiP41110) Undervoltage Lockout Internal Bootstrap Diode Switching Frequency Up to 1 MHz 30-ns Max Propagation Delay Drive MOSFETs In 5- to 48-V Systems Adaptive Shoot-Through Protection APPLICATIONS D D D D D Multi-Phase DC/DC Conversion High Current Low Voltage DC/DC Converters High Frequency DC/DC Converters Mobile and Desktop Computer DC/DC Converters Core Voltage Supplies for PC Micro-Processors DESCRIPTION The SiP41109 and SiP41110 are high-speed half-bridge MOSFET drivers for use in high frequency, high current, multiphase dc-to-dc synchronous rectifier buck power supplies. They are designed to operate at switching frequencies up to 1 MHz. The high-side driver is bootstrapped to allow driving n-channel MOSFETs. They feature adaptive shoot-through protection to prevent simultaneous conduction of the external MOSFETs. There are two options available for the voltage of the high-side and low-side drivers. In the SiP41109, the regulator supplies gate drive voltage to the high-side driver and VCC supplies the low-side driver. in the SiP41110, the regulator supplies the high- and low-side gate drive voltage. The SiP41109 and SiP41110 are assembled in a lead (Pb)-free 8-pin SOIC package for operation over the industrial operating range (−40 _C to 85 _C). TYPICAL APPLICATION CIRCUIT +5 to 48 V +12 V PVcc VCC BOOT UGATE SiP41109/41110 Controller PWM (Tri-State) PHASE VOUT LGATE GND GND GND Document Number: 73023 S-51104—Rev. A, 13-Jun-05 www.vishay.com 1 SiP41109/41110 Vishay Siliconix New Product ABSOLUTE MAXIMUM RATINGS (ALL VOLTAGES REFERENCED TO GND = 0 V) V CC, PVCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 to 15 V BOOT, PHASE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 to 55 V BOOT to PHASE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 to 15 V Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125_C Power Dissipationa SO-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 770 mW Thermal Impedance (QJA)b SO-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130_C/W Notes a. Device mounted with all leads soldered or welded to PC board. b. Derate 7.7 mW/_C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE (ALL VOLTAGES REFERENCED TO GND = 0 V) VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.8 to 13.2 V VLX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48 V CBOOT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 nF to 1 mF BOOT to PHASE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to 85_C SPECIFICATIONSa Test Conditions Unless Specified Parameter Power Supplies Supply Voltage Quiescent Current Supply Current Tristate (Shutdown) Current VCC ICCQ IDD ICCT PWM Non-Switching fPWM = 100 kHz CLOAD = 3 nF kHz, PWM = Open SiP41109 SiP41110 10.8 5.6 12.5 11.0 850 1200 mA 13.2 9.5 mA V Limits Mina Typb Maxa Unit Symbol VCC = 12 V, VBOOT − VPHASE = 8 V TA = −40 to 85_C Reference Voltage Break-Before-Make VBBM 2.5 V PWM Input Input High Input Low Bias Current Tristate Threshold High Low VIH VIL IB VTSH VTSL tTST 240 PWM 5 V or 0 V 3.0 2.0 "600 4.0 VCC 1.0 "1000 V mA V ns Tristate Holdoff Timeoutc Bootstrap Diode Forward Voltage VF IF = 40 mA, TA = 25_C 0.70 0.85 1.0 V MOSFET Drivers High Side Drive Current High-Side Drive Currentc IPKH(source) IPKH(sink) IPKL(source) Low-Side Low Side Drive Currentc IPKL(sink) IPKL(source) IPKL(sink) www.vishay.com VBOOT − VPHASE = 8 V VPVCC = 8 V VPVCC = 12 V SiP41110 SiP41110 SiP41109 SiP41109 0.8 1.0 0.9 1.2 1.4 1.8 Document Number: 73023 S-51104—Rev. A, 13-Jun-05 A 2 SiP41109/41110 New Product SPECIFICATIONSa Test Conditions Unless Specified Parameter MOSFET Drivers High-Side High Side Driver Impedance RDH(source) RDH(sink) RDL(source) Low-Side Low Side Driver Impedance RDL(sink) RDL(source) RDL(sink) High-Side Rise Time High-Side Fall Time High-Side Rise Time Bypass High-Side Fall Time Bypass High-Side High Side Propagation Delayc td(off)H td(on)H trL L trH tfH VBOOT − VPHASE = 8 V, PHASE = GND PHASE VPVCC = 8 V VPVCC = 12 V SiP41110 SiP41109 2.3 1.9 2.9 1.3 2.4 1.2 45 35 45 35 15 15 SiP41110 SiP41109 SiP41110 SiP41109 40 40 30 30 15 15 ns 4.2 3.5 5.2 2.4 4.3 2.2 W Vishay Siliconix Limits Mina Typb Maxa Unit Symbol VCC = 12 V, VBOOT − VPHASE = 8 V TA = −40 to 85_C 10% − 90%, VBOOT − VPHASE = 8 V, CLOAD = 3 nF 10% − 90%, VBOOT − VPHASE = 12 V, CLOAD = 3 nF See Timing Waveforms 10% − 90%, VBOOT − VPHASE = 8 V CLOAD = 3 nF 10% − 90%, VBOOT − VPHASE = 12 V CLOAD = 3 nF 10% − 90%, VBOOT − VPHASE = 8 V CLOAD = 3 nF 10% − 90%, VBOOT − VPHASE = 12 V CLOAD = 3 nF See Timing Waveforms Low-Side Low Side Rise Time Low-Side Low Side Fall Time tfL td(off)L td(on)L Low-Side Low Side Propagation Delay PHASE Timer PHASE Falling Timeoutc tPHASE 380 ns PVCC Regulator Output Voltage Output Current Current Limit Line Regulation Load Regulation PVCC IPVCC ILIM LNR LDR VDRV = 0 V VCC = 10.8 V to 13.2 V 5 mA to 80 mA 120 7.6 8 80 200 0.05 0.1 8.4 100 280 0.5 1.0 V mA %/V % PVCC Regulator UVLO PVCC Rising PVCC Falling Hysteresis VUVLO2 Hyst 100 6.7 6.4 300 7.2 6.9 500 V mV High-Side Undervoltage Lockout Threshold VUVHS Rising or Falling 2.5 3.35 4.0 V VCC Undervoltage Lockout Threshold Power on Reset Time VUVLO1 POR 5.0 5.3 2.5 5.6 V ms Thermal Shutdown Temperature Hysteresis TSD TH Temperature Rising Temperature Falling 165 25 _C Notes a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing and are measured at VCC = 12 V unless otherwise noted. Document Number: 73023 S-51104—Rev. A, 13-Jun-05 www.vishay.com 3 SiP41109/41110 Vishay Siliconix TIMING WAVEFORMS PWM 50% 90% 10% tfH 90% LGate td(off)H 10% 90% 10% td(on)H 10% trH 50% 90% New Product UGate trL td(off)L tfL Phase 2.5 V td(on)L PIN CONFIGURATION AND TRUTH TABLE SO-8 UGATE BOOT PWM GND 1 2 3 4 Top View 8 PHASE PVCC VCC LGATE TRUTH TABLE PWM L H Tri-State SiP41109 SiP41110 7 6 5 UGATE L H L LGATE H L L ORDERING INFORMATION Part Number SiP41109DY-T1—E3 SiP41110DY-T1—E3 Temperature Range −40 to 85_C 40 to 85 Marking 41109 41110 Eval Kit SiP41109DB SiP41110DB Temperature Range −40 to 85_C 40 to 85 PIN DESCRIPTION Pin Number 1 2 3 4 5 6 7 8 www.vishay.com Name UGATE BOOT PWM GND LGATE VCC PVCC PHASE 8-V high-side MOSFET gate drive Function Bootstrap supply for high-side driver. The bootstap capacitor is connected between BOOT and PHASE. Input signal for the MOSFET drivers and tri-state enable Ground Synchronous or low-side MOSFET gate drive 12-V supply. Connect a bypass capacitor w1 mF from here to ground 8-V Voltage Regulator Output. Connect a bypass capacitor w1 mF from here to ground Connection to source of high-side MOSFET, drain of the low-side MOSFET, and the inductor Document Number: 73023 S-51104—Rev. A, 13-Jun-05 4 SiP41109/41110 New Product FUNCTIONAL BLOCK DIAGRAM PVCC Vishay Siliconix VCC +8-V Linear Regulator BOOT UVLO OTP Linear Regulator +5 V Tri-State Detect − + UGATE UVLO PHASE VBBM (2.5 V) PWM VDRL LGATE SiP41109 − VDRL = VCC (12 V) SiP41110 − VDRL = PVCC (8 V) GND Figure 1. DETAILED OPERATION PWM/Tri-State Enable The PWM pin controls the switching of the external MOSFETs. The driver logic operates in a noninverting configuration. The PWM input stage should be driven by a signal with fast transition times, like those provided by a PWM controller or logic gate, (