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SIP4280A

SIP4280A

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SIP4280A - Slew Rate Controlled Load Switch - Vishay Siliconix

  • 数据手册
  • 价格&库存
SIP4280A 数据手册
SiP4280A Vishay Siliconix Slew Rate Controlled Load Switch FEATURES • 1.5 V to 5.5 V Input Voltage range • Very Low RDS(ON), typically 80 mΩ (5 V) • Slew rate limited turn-on time options - SiP4280A-1: 1 ms - SiP4280A-3: 100 µs • Fast shutdown load discharge option • Low quiescent current < 25 nA (typ) • 4 kV ESD Rating • 6 pin SOT23 package DESCRIPTION The SiP4280A is a P-Channel MOSFET power switch designed for high-side load switching applications. The output pass transistor is a P-Channel MOSFET transistor with typically 80 mΩ RDS(ON). The SiP4280A is available in two different versions of turn-on times. The SiP4280A-1 version has a slew rate limited turn-on time typically of 1 ms. The SiP4280A-3 version has a slew rate limited turn-on time typically of 100 µs and additionally offers a shutdown load discharge circuit to rapidly turn off a load circuit when the switch is disabled. APPLICATIONS • Cellular telephones • Digital still cameras • Personal digital assistants (PDA) • Hot swap supplies • Notebook computers • Personal communication devices Both SiP4280A load switch versions operate with an input voltage ranging from 1.5 V to 5.5 V, making them ideal for both 3 V and 5 V applications. The SiP4280A also features an under-voltage lock out which turns the switch off when an input undervoltage condition exists. Input logic levels are TTL and 2.5 V to 5.0 V CMOS compatible. The quiescent supply current is very low, typically 25 nA. In shutdown mode, the supply current decreases to less than 1.0 µA. The SiP4280A is available in a 6 pin SOT23 package and is specified over - 40 °C to 85 °C temperature range. TYPICAL APPLICATION CIRCUIT SiP4280A 0.1 µF 1 µF Document Number: 73602 S-61772–Rev. C, 11-Sep-06 www.vishay.com 1 SiP4280A Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Supply Input Voltage Enable Input Voltage Output Voltage Maximum Switch Current Maximum Pulsed Current Junction Temperature Thermal Resistance Power Dissipation SOT23-6L SOT23-6Lb VIN ≥ 2.5 VIN < 2.5 Symbol VIN VON VOUT IMAX IDM IDM TJ ΦJAa PD Steady State - 0.3 to 6 - 0.3 to 6 - 0.3 to VIN + 0.3 2.3 6 3 - 40 to 150 180 440 V Unit A °C °C/W mW Notes: a. Device mounted with all leads soldered or welded to PC board. b. Derate 5.5 mW/°C above TA = 70 °C. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE all voltages referenced to GND = 0 V Parameter Operating Temperature Range Symbol VIN Steady State 1.5 to 5.5 - 40 to 85 Unit V °C SPECIFICATIONS Test Conditions Unless Specified VIN = 5 V, TA = - 40 to 85 °C Limits Mina 1.5 1.4 2 2.4 Typb 0.01 0.01 80 85 100 160 2800 20 1000 4 20 100 4 150 Maxa 5.5 1 1 1 120 130 150 250 0.4 1 40 1500 10 40 150 10 250 Unit V µA Parameter SiP4280A All Versions Operating Voltage Quiescent Current Off Supply Current Off Switch Current Symbol VIN IQ IQ(OFF) ISD(OFF) RDS(ON) TCRDS VIL VIH ISINK TD(ON) TON TD(OFF) TD(ON) TON TD(OFF) RPD On-Resistance ON/OFF = active ON/OFF = inactive, OUT = open ON/OFF = inactive, VOUT = 0 VIN = 5 V, TA = 25 °C VIN = 4.2 V, TA = 25 °C VIN = 3 V, TA = 25 °C VIN = 1.8 V, TA = 25 °C VIN = 1.8 V to 5.5 V VIN = 1.5 V to 2.7 V VIN = 2.7 V to < 4.2 V VIN ≥ 4.2 V to 5.5 V VON/OFF = 5.5 V VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C ON/OFF = inactive, TA = 25 °C mΩ On-Resistance Temp-Coefficient ON/OFF Input Low Voltagec ON/OFF Input High Voltage ON/OFF Input Leakage SiP4280A-1 Version Output Turn-On Delay Time Output Turn-On Rise Time Output Turn-Off Delay Time SiP4280A-3 Version Output Turn-On Delay Time Output Turn-On Rise Time Output Turn-Off Delay Time Output Pull-Down Resistance ppm/°C V µA µs µs Ω Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. For VIN ≤ 1.5 V see typical ON/OFF threshold curve. www.vishay.com 2 Document Number: 73602 S-61772–Rev. C, 11-Sep-06 SiP4280A Vishay Siliconix PIN CONFIGURATION PIN DESCRIPTION Pin Number SOT23-6 4, 6 3 2, 5 1 Pin Name VIN ON/OFF GND OUT Description This pin is the P-Channel MOSFET source connection Logic high enables the IC; logic low disables the IC Ground connection This pin is the P-Channel MOSFET drain connection SELECTION GUIDE Part Number SiP4280A-1-T1-E3 SiP4280A-3-T1-E3 Slew Rate (typ) 1 ms 100 µs Active Pull Down No Yes Enable Active High Active High ORDERING INFORMATION Part Number SiP4280ADT-1-T1-E3 SiP4280ADT-3-T1-E3 Marking L4XX L6XX Temperature Range - 40 °C to 85 °C Package SOT23-6L SOT23-6L Document Number: 73602 S-61772–Rev. C, 11-Sep-06 www.vishay.com 3 SiP4280A Vishay Siliconix TYPICAL CHARACTERISTICS internally regulated, 25 °C unless noted 90 80 70 60 rDS(ON) (mΩ) IQ (nA) 50 40 30 20 10 0 - 40 VIN = 3 V - 20 0 20 40 60 80 100 VIN = 5 V 250 230 210 190 170 150 130 110 90 70 50 1.5 100 mA 500 mA 2A 1A 2.0 2.5 3.0 3.5 VIN (V) 4.0 4.5 5.0 5.5 Temperature (°C) Quiescent Current vs. Temperature 140 130 ON/OFF Threshold (V) 120 rDS(ON) (mΩ) 110 100 90 80 70 60 - 40 V=3V V=5V 2.2 2.0 1.8 1.6 1.4 1.2 VIH 1.0 0.8 0.6 0.4 1.5 RDS(ON) vs. Input Voltage VIL - 25 0 25 50 75 85 2.0 2.5 3.0 3.5 VIN (V) 4.0 4.5 5.0 5.5 Temperature (°C) RDS(ON) vs. Temperature 1.0 ON/OFF Threshold vs. Input Voltage 0.8 IoffSW (µA) 0.6 0.4 0.2 0.0 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Off Switch Current vs. Temperature www.vishay.com 4 Document Number: 73602 S-61772–Rev. C, 11-Sep-06 SiP4280A Vishay Siliconix TYPICAL WAVEFORMS ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (500 µs/div) Time (5 µs/div) SiP4280A-1 Turn-On (VIN = 3 V, RLOAD = 6 Ω) SiP4280A-1 Turn-Off (VIN = 3 V, RLOAD = 6 Ω) ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (500 µs/div) Time (5 µs/div) SiP4280A-1 Turn-On (VIN = 5 V, RLOAD = 10 Ω) SiP4280A-1 Turn-Off (VIN = 5 V, RLOAD = 10 Ω) Document Number: 73602 S-61772–Rev. C, 11-Sep-06 www.vishay.com 5 SiP4280A Vishay Siliconix TYPICAL WAVEFORMS ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (50 µs/div) Time (5 µs/div) SiP4280A-3 Turn-On (VIN = 3 V, RLOAD = 6 Ω) SiP4280A-3 Turn-Off (VIN = 3 V, RLOAD = 6 Ω) ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (50 µs/div) Time (5 µs/div) SiP4280A-3 Turn-On (VIN = 5 V, RLOAD = 10 Ω) SiP4280A-3 Turn-Off (VIN = 5 V, RLOAD = 10 Ω) www.vishay.com 6 Document Number: 73602 S-61772–Rev. C, 11-Sep-06 SiP4280A Vishay Siliconix BLOCK DIAGRAM SiP4280A–3 Version only SiP4280A Functional Block Diagramm DETAILED DESCRIPTION The SiP4280A is a P-Channel MOSFET power switches designed for high-side slew rate controlled load switching applications. Once turned on, the slewrate control circuitry is activated and current is ramped in a linear fashion until it reaches the level required for the output load condition. This is accomplished by first elevating the gate voltage of the MOSFET up to its threshold voltage and then by linearly increasing the gate voltage until the MOSFET becomes fully enhanced. At this point, the gate voltage is then quickly increased to the full input voltage to reduce RDS(ON) of the MOSFET switch and minimize any associated power losses. The SiP4280A-1 version has a modest 1 ms turn on slew rate feature, which significantly reduces in-rush current at turned on time and permits the load switch to be implemented with a small input capacitor, or no input capacitor at all, saving cost and space. In addition to a 100 µs minimized slew rate, the SIP4280A-3 features a shutdown output discharge circuit which is activated at shutdown (when the part is disabled through the ON/OFF pin) and discharges the output pin through a small internal resistor hence, turning off the load. In instances where the input voltage falls below 1.4 V (typically) the under voltage lock-out circuitry protects the MOSFET switch from entering the saturation region or operation by shutting down the chip. Document Number: 73602 S-61772–Rev. C, 11-Sep-06 www.vishay.com 7 SiP4280A Vishay Siliconix APPLICATION INFORMATION Input Capacitor While a bypass capacitor on the input is not required, a 1 µF or larger capacitor for CIN is recommended in almost all applications. The Bypass capacitor should be placed as physically close as possible to the SiP4280A to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 µF capacitor or larger across VOUT and GND is recommended to insure proper slew operation. COUT may be increased without limit to accommodate any load transient condition with only minimal affect on the SiP4280A turn on slew rate time. There are no ESR or capacitor type requirement. Enable The ON/OFF pin is compatible with both TTL and CMOS logic voltage levels. Reverse Voltage Conditions and Protection The P-Channel MOSFET pass transistor has an intrinsic diode that is reversed biased when the input voltage is greater than the output voltage. Should VOUT exceed VIN, this intrinsic diode will become forward biased and allow excessive current to flow into the IC thru the VOUT pin and potentially damage the IC device. Therefore extreme care should be taken to prevent VOUT from exceeding VIN. In conditions where VOUT exceeds VIN a Schottky diode in parallel with the internal intrinsic diode is recommended to protect the SiP4280A. Thermal Considerations The SiP4280A is designed to maintain a constant output load current. The internal switch is designed to operate at 2.3 A of current, as stated in the ABS MAX table. However, The real limiting factor for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation the power pad of the device should be connected to a heat sink on the printed circuit board. The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ(MAX) = 125 °C, the junction-to-ambient thermal resistance θJ-A = 180 °C for SOT23-6, and the ambient temperature, TA, which may be formulaically expressed as: P (max) = T J (max) − T A θ J−A = 125 − T A 140 It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 305 mW for SOT23-6. In any application, the maximum continuous switch current is a function two things: the package power dissipation and the RDS(ON) at the ambient temperature. As an example let us calculate the worst-case maximum load current at TA= 70 °C. The worst case RDS(ON) at 25 °C occurs at an input voltage of 1.8 V and is equal to 250 mΩ. The RDS(ON) at 70 °C can be extrapolated from this data using the following formula RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT) Where TC is 2090 ppm/°C. Continuing with the calculation we have RDS(ON) (at 70 °C) = 250 mΩ x (1 + 0.00209 x (70 °C 25 °C)) = 278 mΩ The maximum current limit is then determined by P (max) I LOAD (max) 〈 R DS(ON ) which in case is 1.05 A for SOT23-6. Under the stated input voltage condition, if the calculated current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73602 www.vishay.com 8 Document Number: 73602 S-61772–Rev. C, 11-Sep-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1
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