SIP4282DVP3-T1GE3

SiP4282 Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6, and TDFN4 1.2 mm x 1.6 mm DESCRIPTION The SiP4282 series is a slew rate controlled high side switch. The switch is of a low ON resistance P-Channel MOSFET that supports continuous current up to 1.2 A. The SiP4282 series operates with an input voltage from 1.8 V to 5.5 V. It offers under voltage lock out that turns the switch off when an input under voltage condition exists. The "A" option without UVLO extends the minimum operation voltage from 1.8 V down to 1.5 V. The SiP4282 is available in two different versions of slew rates, 100 µs and 1 ms. The SiP4282 series integrates load discharge circuit to ensure the discharge of capacitive load when the switch is disabled. The SiP4282 features low input logic level to interface with low control voltage from microprocessors. This device has a very low operating current (typically 2.5 µA for SiP4282 and 50 pA for SiP4282A). The SiP4282 is available in lead (Pb)-free package options including 6 pin PPAK SC75-6, and 4 pin TDFN4 1.2 mm x 1.6 mm DFN4 packages. The operation temperature range is specified from - 40 °C to + 85 °C. The SiP4282 compact package options, operation voltage range, and low operating current make it a good fit for battery power applications. FEATURES • 1.8 V to 5.5 V input voltage range for SiP4282 • 1.5 V to 5.5 V input voltage range for SiP4282A • Very low RDS(ON), typically 105 mΩ at 5 V and 175 mΩ at 3 V • Slew rate controlled turn-on time options: 100 µs, and 1 ms • Fast shutdown load discharge • Low quiescent current, 4 µA for SiP4282 • Low quiescent current, 1 µA for SiP4282A • Low shutdown current < 1 µA • UVLO of 1.4 V for SiP4282 • PowerPAK SC-75 1.6 mm x 1.6 mm and TDFN4 1.2 mm x 1.6 mm packages • Compliant to RoHS directive 2002/95/EC APPLICATIONS • • • • • • • Cellular telephones Digital still cameras Personal digital assistants (PDA) Hot swap supplies Notebook computers Personal communication devices Portable Instruments TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP4282 C IN 1 µF ON/OFF ON/OFF GND C OUT 0.1 µF GND GND Figure 1 - SiP4282 Typical Application Circuit Document Number: 65740 S10-0671-Rev. E, 29-Mar-10 www.vishay.com 1 SiP4282 Vishay Siliconix ORDERING INFORMATION Temperature Range Package PPAK SC75-6 - 40 °C to 85 °C TDFN4 1.2 x 1.6 Notes: xxx = Lot Code Slew Rate (typ.) 1 ms 100 µs 100 µs 1 ms 100 µs 100 µs Under Voltage Lockout No No Yes No No Yes Marking LDxxx LExxx LFxxx AAx ABx ACx Part Number SiP4282ADVP2-T1GE3 SiP4282ADVP3-T1GE3 SiP4282DVP3-T1GE3 SiP4282ADNP2-T1GE4 SiP4282ADNP3-T1GE4 SiP4282DNP3-T1GE4 ABSOLUTE MAXIMUM RATINGS Parameter Supply Input Voltage (VIN) Enable Input Voltage (VON/OFF) Output Voltage (VOUT) Maximum Continuous Switch Current (IMAX) Maximum Pulsed Current (IDM) VIN ESD Rating (HBM) Junction Temperature (TJ) Thermal Resistance (θJA)a Power Dissipation (PD)a 6 pin PPAK SC75b 4 pin TDFN4 1.2 mm x 1.6 mmc 6 pin PPAK SC75b 4 pin TDFN4 1.2 mm x 1.6 mmc VIN ≥ 2.5 V VIN < 2.5 V Limit - 0.3 to 6 - 0.3 to 6 - 0.3 to VIN + 0.3 1.4 3 1.6 4000 - 40 to 125 90 170 610 324 V °C °C/W mW A V Unit Notes: a. Device mounted with all leads and power pad soldered or welded to PC board. b. Derate 11.1 mW/°C above TA = 70 °C. c. Derate 5.9 mW/°C above TA = 70 °C, see PCB layout. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter Input Voltage Range (VIN) for SiP4282 Version Input Voltage Range (VIN) for SiP4282A Version Operating Temperature Range Limit 1.8 to 5.5 1.5 to 5.5 - 40 to 85 Unit V V °C www.vishay.com 2 Document Number: 65740 S10-0671-Rev. E, 29-Mar-10 SiP4282 Vishay Siliconix SPECIFICATIONS Test Conditions Unless Specified VIN = 5.0, TA = - 40 °C to 85 °C (Typical values are at TA = 25 °C) For SiP4282xxx For SiP4282Axxx For SiP4282xxx, VIN falling For SiP4282xxx For SiP4282xxx, On/Off = active For SiP4282Axxx, On/Off = active VIN = 5 V, IL = 500 mA, TA = 25 °C VIN = 4.2 V, IL = 500 mA, TA = 25 °C On-Resistance RDS(on) VIN = 3 V, IL = 500 mA, TA = 25 °C VIN = 1.8 V, IL = 500 mA, TA = 25 °C For SiP4282Axxx, VIN = 1.5 V, IL = 500 mA, TA = 25 °C On-Resistance Temp-Coefficient TCRDS For SiP4282Axxx, VIN ≥ 1.5 V to < 1.8 V VIN ≥ 1.8 V to < 2.7 V VIN ≥ 2.7 V to ≤ 5.5 V VIN ≥ 1.5 V to < 2.7 V On/Off Input High Voltaged On/Off Input Leakage Output Pull-Down Resistance SiP4282Axxx2 Versions Output Turn-On Delay Time Output Turn-On Rise Time Output Turn-Off Delay Time SiP4282xxx3 and SiP4282Axxx3 Versions Output Turn-On Delay Time Output Turn-On Rise Time Output Turn-Off Delay Time td(on) t(on) td(off) VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C 20 140 4 40 180 10 µs td(on) t(on) td(off) VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C 20 1100 4 40 1500 10 µs VIH ISINK RPD VIN ≥ 2.7 V to < 4.2 V VIN ≥ 4.2 V to ≤ 5.5 V VOn/Off = 5.5 V On/Off = Inactive, TA = 25 °C Limits - 40 °C to 85 °C Min.a 1.8 1.5 1.0 1.3 1.5 1.8 Typ.b 1.4 250 2.5 0.00005 105 110 135 230 350 2800 180 Max.a 5.5 5.5 1.8 4 1 230 250 290 480 520 0.3 0.4 0.6 1 250 µA Ω V ppm/°C mΩ mV µA Unit V Parameter Operating Voltagec Operating Voltage Under Voltage Voltage Under Voltage Lockout Hysteresis Quiescent Current Symbol VIN VUVLO VUVLO(hyh) IQ On/Off Input Low Voltaged VIL Notes: a) The algebriac convention whereby the most negative value is a minimum and the most positive a maximum. b) Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing c) Part requires minimum start-up of VIN ≥ 2.0 V to ensure operation down to 1.8 V. d) For VIN outside this range consult typical ON/OFF threshold curve. Document Number: 65740 S10-0671-Rev. E, 29-Mar-10 www.vishay.com 3 SiP4282 Vishay Siliconix PIN CONFIGURATION OUT 6 1 IN ON/OFF 4 GND 1 OUT OUT 5 2 IN IN 3 2 GND ON/OFF 4 3 GND Bottom View Bottom View Figure 3 - TDFN4 1.2 mm x 1.6 mm Package Figure 2 - PPAK SC75-6 Package PIN DESCRIPTION Pin Number PPAK TDFN4 1, 2 3 3 2 4 4 5, 6 1 Name IN GND ON/OFF OUT Function This pin is the p-channel MOSFET source connection. Bypass to ground through a 1 µF capacitor. Ground connection Enable input This pin is the p-channel MOSFET drain connection. Bypass to ground through a 0.1 µF capacitor. TYPICAL CHARACTERISTICS internally regulated, 25 °C, unless otherwise noted 0.12 SiP4282A 3.0 SiP4282 0.10 IQ - Quiescent Current (nA) IQ - Quiescent Current (µA) 2.5 0.08 2.0 0.06 1.5 0.04 1.0 0.02 0.5 0 1.5 2.0 2.5 3.0 3.5 VIN (V) 4.0 4.5 5.0 5.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VIN (V) Figure 4 - Quiescent Current vs. Input Voltage 10 SiP4282A Figure 5 - Quiescent Current vs. Input Voltage 3.5 SiP4282 3.0 IQ - Quiescent Current (nA) IQ - Quiescent Current (µA) 1 2.5 2.0 1.5 VIN = 5 V 0.1 VIN = 5 V VIN = 3 V 0.01 VIN = 3 V 1.0 0.5 0 - 40 0.001 - 40 - 20 0 20 40 60 80 100 - 20 0 20 40 60 80 100 Temperature (°C) Temperature (°C) Figure 6 - Quiescent Current vs. Temperature www.vishay.com 4 Figure 7 - Quiescent Current vs. Temperature Document Number: 65740 S10-0671-Rev. E, 29-Mar-10 SiP4282 Vishay Siliconix TYPICAL CHARACTERISTICS internally regulated, 25 °C, unless otherwise noted 350 300 ISD(OFF) - Off Switch Current (nA) 300 VIN = 5 V ISD(OFF) - Off Switch Current (nA) 250 250 200 150 100 50 0 1.5 200 150 100 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 - 40 - 20 0 20 40 60 80 100 VIN (V) Temperature (°C) Figure 8 - Off Switch Current vs. Input Voltage 550 500 450 RDS - On-Resistance (mΩ) Figure 9 - Off Switch Current vs. Temperature 180 ILOAD = 500 mA 160 IL = 1.2 A RDS - On-Resistance (mΩ) 400 350 300 250 200 150 140 VIN = 3 V 120 IL = 500 mA 100 VIN = 5 V IL = 100 mA 80 100 50 1.5 2.0 2.5 3.0 3.5 VIN (V) 4.0 4.5 5.0 5.5 60 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Figure 10 - RDS(ON) vs. Input Voltage 220 210 200 190 180 170 160 150 - 40 On/Off Threshold Voltage (V) RPD - Output Pull-Down (Ω) Figure 11 - RDS(ON) vs. Temperature 1.6 1.4 1.2 VIH 1.0 VIL 0.8 0.6 - 20 0 20 40 60 80 100 0.4 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Temperature (°C) VIN (V) Figure 12 - Output Pull-Down Resistance vs. Figure 13 - ON/OFF Threshold vs. Input Voltage Document Number: 65740 S10-0671-Rev. E, 29-Mar-10 www.vishay.com 5 SiP4282 Vishay Siliconix TYPICAL WAVEFORMS Figure 14 - SiP4282Axxx2 Switching (VIN = 3 V) Figure 15 - SiP4282Axxx2 Turn-Off (VIN = 3 V) Figure 16 - SiP4282Axxx2 Switching (VIN = 5 V) Figure 17 - SiP4282Axxx2 Turn-Off (VIN = 5 V) Figure 18 - SiP4282xxx3 and SiP4282Axxx3 Switching (VIN = 3 V) Figure 19 - SiP4282xxx3 and SiP4282Axxx3 Turn-Off (VIN = 3 V) www.vishay.com 6 Document Number: 65740 S10-0671-Rev. E, 29-Mar-10 SiP4282 Vishay Siliconix TYPICAL WAVEFORMS Figure 20 - SiP4282xxx3 and SiP4282Axxx3 Switching (VIN = 5 Figure 21 - SiP4282xxx3 and SiP4282Axxx3 Turn-Off (VIN = 5 V) BLOCK DIAGRAM IN Under Voltage Lockout SiP4282xxx3 only Level Shift Turn-On Slew Rate Control OUT ON/OFF GND Figure 22 - SiP4282 Functional Block Diagram PCB LAYOUT Top Figure 23 - TDFN4 1.2 mm x 1.6 mm PCB Layout Document Number: 65740 S10-0671-Rev. E, 29-Mar-10 Bottom www.vishay.com 7 SiP4282 Vishay Siliconix DETAILED DESCRIPTION The SiP4282 is a P-Channel MOSFET power switches designed for high-side slew rate controlled load-switching applications. Once turned on, the slew-rate control circuitry is activated and current is ramped in a linear fashion until it reaches the level required for the output load condition. This is accomplished by first elevating the gate voltage of the MOSFET up to its threshold voltage and then by linearly increasing the gate voltage until the MOSFET becomes fully enhanced. At this point, the gate voltage is then quickly increased to the full input voltage to reduce RDS(ON) of the MOSFET switch and minimize any associated power losses. The SiP4282A-2 version has a modest 1 ms turn on slew rate feature, which significantly reduces in-rush current at turned on time and permits the load switch to be implemented with a small input capacitor, or no input capacitor at all, saving cost and space. All versions features a shutdown output discharge circuit which is activated at shutdown (when the part is disabled through the On/Off pin) and discharges the output pin through a small internal resistor hence, turning off the load. For SiP4282-3, in instances where the input voltage falls below 1.4 V (typically) the under voltage lock-out circuitry protects the MOSFET switch from entering the saturation region or operation by shutting down the chip. In conditions where VOUT exceeds VIN a Schottky diode in parallel with the internal intrinsic diode is recommended to protect the SiP4282. Thermal Considerations The SiP4282 is designed to maintain a constant output load current. Due to physical limitations of the layout and assembly of the device the maximum switch current is 1.2 A, as stated in the Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation (and a thermal resistance of 90 °C/W) the power pad of the device should be connected to a heat sink on the printed circuit board. The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ(MAX) = 125 °C, the junction-to-ambient thermal resistance for the SC-75 PPAK package, θJ-A = 90 °C/W, and the ambient temperature, TA, which may be formulaically expressed as: P (max.) = T J (max.) - T A θJ- A = 125 - TA 90 APPLICATION INFORMATION Input Capacitor While a bypass capacitor on the input is not required, a 1 µF or larger capacitor for CIN is recommended in almost all applications. The bypass capacitor should be placed as physically close as possible to the SiP4282 to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 µF capacitor or larger across VOUT and GND is recommended to insure proper slew operation. COUT may be increased without limit to accommodate any load transient condition with only minimal affect on the SiP4282 turn on slew rate time. There are no ESR or capacitor type requirement. Enable The On/Off pin is compatible with both TTL and CMOS logic voltage levels. Protection Against Reverse Voltage Condition The P-channel MOSFET pass transistor has an intrinsic diode that is reversed biased when the input voltage is greater than the output voltage. Should VOUT exceed VIN, this intrinsic diode will become forward biased and allow excessive current to flow into the IC thru the VOUT pin and potentially damage the IC device. Therefore extreme care should be taken to prevent VOUT from exceeding VIN. It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 610 mW. So long as the load current is below the 1.2 A limit, the maximum continuous switch current becomes a function two things: the package power dissipation and the RDS(ON) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C. The worst case RDS(ON) at 25 °C occurs at an input voltage of 1.8 V and is equal to 480 mΩ. The RDS(ON) at 70 °C can be extrapolated from this data using the following formula RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT) Where TC is 3300 ppm/°C. Continuing with the calculation we have RDS(ON) (at 70 °C) = 480 mΩ x (1 + 0.0033 x (70 °C - 25 °C)) = 551 mΩ The maximum current limit is then determined by P (max.) I LOAD (max.) < R DS(ON ) which in case is 1.05 A. Under the stated input voltage condition, if the 1.05 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65740. www.vishay.com 8 Document Number: 65740 S10-0671-Rev. E, 29-Mar-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 Package Information Vishay Siliconix TDFN4 1.2 x 1.6 CASE OUTLINE D b Pin #1 ID (Optional) D2 3 4 3 4 E2 E Index Area (D/2 x E/2) 1 2 e Top View Bottom View A3 A1 Side View MILLIMETERS DIM. MIN. NOM. 0.55 0.15 REF 0.25 1.20 0.86 0.50 BSC 1.60 0.50 0.35 MAX. 0.60 0.05 0.30 1.25 0.91 1.65 0.55 0.40 MIN. 0.020 0.00 0.008 0.045 0.032 0.061 0.018 0.008 0.012 A 0.50 A1 0.00 A3 b 0.20 D 1.15 D2 0.81 e E 1.55 E2 0.45 K 0.20 L 0.30 ECN: C10-0043-Rev. A, 08-Feb-10 DWG: 5995 A INCHES NOM. 0.022 0.006 0.010 0.047 0.034 0.020 0.063 0.020 0.014 MAX. 0.024 0.002 0.012 0.049 0.036 0.065 0.022 0.016 Document Number: 65734 Revision: 08-Feb-10 L www.vishay.com 1 2 1 K Package Information Vishay Siliconix PowerPAK ® SC75-6L (Power IC only) D1 Exposed pad e D b Pin4 Pin 5 Pin6 K E PPAKSC75 (1.6 x 1.6 mm) K L Pin3 K2 Top View Bottom View Pin 2 e1 Pin 1 Dot By Marking K2 Pin1 E1 Exposed pad A C A1 Side View MILLIMETERS DIM A A1 b C D D1 E E1 e e1 K K2 L 0.15 0.20 0.20 Min 0.70 0 0.20 0.15 1.55 0.95 1.55 0.55 Nom 0.75 0.25 0.20 1.60 1.00 1.60 0.60 0.50 BSC 1.00 BSC 0.25 0.30 0.006 0.008 0.008 Max 0.80 0.05 0.30 0.25 1.65 1.05 1.65 0.65 Min 0.028 0 0.008 0.006 0.0061 0.037 0.061 0.022 INCHES Nom 0.030 0.010 0.008 0.063 0.039 0.063 0.024 0.020 BSC 0.039 BSC 0.010 0.012 Max 0.032 0.002 0.012 0.010 0.065 0.041 0.065 0.026 ECN: S-60845-Rev. B, 22-May-06 DWG: 5953 Document Number: 73850 22-May-06 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1