SIR774DP

New Product SiR774DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. 0.0026 at VGS = 10 V 0.0034 at VGS = 4.5 V ID (A)a 40 40 Qg (Typ.) 28.5 nC PowerPAK® SO-8 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS 5.15 mm 6.15 mm S 1 2 3 S S G 4 • VRM, POL, Server • Notebook - Low-Side - Vcore - Memory D D 8 7 6 5 D D D Bottom View Ordering Information: SiR774DP-T1-GE3 (Lead (Pb)-free and Halogen-free) G N-Channel MOSFET S Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L =0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 30 ± 20 40a 40a 32b, c 25.6b, c 80 40a 8b, c 30 45 62.5 40 5b, c 3.2b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t  10 s Steady State Symbol RthJA RthJC Typical 20 1.6 Maximum 25 2.0 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. Document Number: 63285 S11-1663-Rev. A, 15-Aug-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiR774DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 5 A 0.41 29 17.5 15 14 TC = 25 °C 40 80 0.6 55 33 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  f = 1 MHz 0.2 VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A VDS = 15 V, VGS = 0 V, f = 1 MHz 3140 705 285 58 28.5 7.6 9.4 0.95 12 10 33 10 24 24 33 12 1.9 24 20 65 20 45 45 65 24 ns  87 42.5 nC pF VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 100 °C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 10 A VDS = 15 V, ID = 15 A 30 0.0021 0.0027 95 0.0026 0.0034 0.07 5.5 30 1 2.2 ± 100 0.30 50 V nA mA A  S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 63285 S11-1663-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiR774DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 VGS = 10 V thru 4 V 64 ID - Drain Current (A) VGS = 3 V 48 10 8 ID - Drain Current (A) 6 TC = 25 °C 32 4 16 VGS = 2 V 0 2 TC = 125 °C 0 0 0.5 1 1.5 2 2.5 TC = - 55 °C 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0035 4100 0.0031 RDS(on) - On-Resistance (Ω) VGS = 4.5 V C - Capacitance (pF) 3280 Ciss 0.0027 2460 0.0023 VGS = 10 V 0.0019 1640 Coss 820 Crss 0.0015 0 10 20 30 40 50 ID - Drain Current (A) 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 10 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 8 VDS = 15 V 6 VDS = 10 V 4 VDS = 20 V 1.6 1.8 ID = 15 A Capacitance VGS = 10 V 1.4 1.2 VGS = 4.5 V 1.0 2 0.8 0 0 12 24 36 Qg - Total Gate Charge (nC) 48 60 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 63285 S11-1663-Rev. A, 15-Aug-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiR774DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.010 ID = 15 A 10 TJ = 150 °C TJ = 25 °C RDS(on) - On-Resistance (Ω) 0.008 IS - Source Current (A) 1 0.006 0.1 0.004 TJ = 125 °C TJ = 25 °C 0.01 0.002 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0.000 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 Source-Drain Diode Forward Voltage 10-1 30 V On-Resistance vs. Gate-to-Source Voltage 200 10-2 IR - Reverse Current (A) 160 10-4 10 V Power (W) 50 75 100 125 150 10-3 20 V 120 80 10-5 40 10-6 0 25 TJ - Temperature (°C) 0 0.001 0.01 0.1 Time (s) 1 10 Reverse Current (Schottky) 100 IDM Limited ID Limited Single Pulse Power, Junction-to-Ambient 100 μs 1 ms 10 ID - Drain Current (A) 10 ms 1 Limited by RDS(on)* 100 ms 1s 10 s 0.1 DC TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 BVDSS Limited Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 63285 S11-1663-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiR774DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 96 ID - Drain Current (A) 72 48 Package Limited 24 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 75 2.5 60 2.0 Power (W) Power (W) 45 1.5 30 1.0 15 0.5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63285 S11-1663-Rev. A, 15-Aug-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiR774DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 10 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63285. www.vishay.com 6 Document Number: 63285 S11-1663-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1