New Product
SiR800DP
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.0023 at VGS = 10 V 0.0026 at VGS = 4.5 V 0.0034 at VGS = 2.5 V ID (A)a 50 50 50 41 nC Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC
PowerPAK® SO-8
APPLICATIONS
6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
5.15 mm
• • • • •
DC/DC Low Voltage Drive POL OR-ing Fixed Telecom
G
D
Bottom View Ordering Information: SiR800DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 20 ± 12 50a 50a 35.4b, c 28.2b, c 80 50a 6.2b, c 30 45 69 44.4 5.2b, c 3.3b, c - 55 to 150 260 Unit V
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
IDM IS IAS EAS PD
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
Maximum Junction-to-Ambient °C/W RthJC Maximum Junction-to-Case (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. Document Number: 65738 S10-0637-Rev. A, 22-Mar-10 www.vishay.com 1
t ≤ 10 s Steady State
Symbol RthJA
Typical 19 1.2
Maximum 24 1.8
Unit
New Product
SiR800DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta IS ISM VSD trr Qrr ta tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 5 A 0.65 30 17 16 14 TC = 25 °C 50 80 1.1 60 34 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω f = 1 MHz 0.4 VDS = 10 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A VDS = 10 V, VGS = 0 V, f = 1 MHz 5125 1050 510 89 41 7.4 7.6 1.2 13 8 54 10 27 15 70 27 2.4 25 16 100 20 50 30 120 50 ns Ω 133 62 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 12 A VGS = 2.5 V, ID = 10 A VDS = 10 V, ID = 15 A 40 0.0019 0.0021 0.0028 96 0.0023 0.0026 0.0034 S Ω 0.6 20 18 - 4.1 1.5 ± 100 1 10 V mV/°C V nA µA A Symbol Test Conditions Min. Typ. Max. Unit
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 65738 S10-0637-Rev. A, 22-Mar-10
New Product
SiR800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
VGS = 10 V thru 2 V
10
64
ID - Drain Current (A) ID - Drain Current (A)
8
48
6
TC = 25 °C
32
4
16
2
TC = 125 °C TC = - 55 °C
0 0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
0 0 0.6 1.2 1.8 2.4 3.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.0034 6800
Transfer Characteristics
Ciss
0.0030
RDS(on) - On-Resistance (Ω) C - Capacitance (pF) VGS = 2.5 V
5440
0.0026
4080
0.0022
VGS = 4.5 V
2720
Coss
0.0018
VGS = 10 V
1360
Crss
0.0014 0 16 32 48 64 80
ID - Drain Current (A)
0 0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10 ID = 15 A VGS - Gate-to-Source Voltage (V) 8 RDS(on) - On-Resistance (Normalized)
Capacitance
1.6
ID = 15 A
1.4
VGS = 10 V
6 VDS = 5 V VDS = 10 V 4 VDS = 15 V 2
1.2
VGS = 2.5 V
1.0
0.8
0
0
19
38
57
76
95
0.6 - 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65738 S10-0637-Rev. A, 22-Mar-10
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New Product
SiR800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.0080
ID = 15 A
10
TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A)
0.0064
1
TJ = 25 °C
0.0048
0.1
0.0032
TJ = 125 °C
0.01
0.0016
TJ = 25 °C
0.001 0.0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.3 200
On-Resistance vs. Gate-to-Source Voltage
0.1
VGS(th) - Variance (V)
160
- 0.3
ID = 250 μA
Power (W)
- 0.1
ID = 5 mA
120
80
- 0.5
40
- 0.7 - 50
- 25
0
25
50
75
100
125
150
0 0.001
0.01
0.1
Time (s)
1
10
TJ - Junction Temperature (°C)
Threshold Voltage
100 Limited by RDS(on)*
Single Pulse Power, Junction-to-Ambient
1 ms
10
ID - Drain Current (A)
10 ms
100 ms
1
1s 10 s
0.1
TA = 25 °C Single Pulse BVDSS Limited
DC
0.01 0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65738 S10-0637-Rev. A, 22-Mar-10
New Product
SiR800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
150
120
ID - Drain Current (A)
90
60
Package Limited
30
0 0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
90 2.5
72
2.0
Power (W)
36
Power (W)
54
1.5
1.0
18
0.5
0 0 25 50 75 100 125 150
TC - Case Temperature (°C)
0 0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 65738 S10-0637-Rev. A, 22-Mar-10
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New Product
SiR800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05
t1 t2 t1 t2 Notes: PDM
0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA (t) 4. Surface Mounted
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1
0.1 0.05 0.02 Single Pulse
0.01 10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65738.
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Document Number: 65738 S10-0637-Rev. A, 22-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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