SIR862DP

New Product SiR862DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.0028 at VGS = 10 V 0.0035 at VGS = 4.5 V ID (A)a, e 50 28.4 nC 50 Qg (Typ.) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 APPLICATIONS • DC/DC Conversion - Low-Side Switch • Notebook • Server • Game Console G 6.15 mm S 1 2 3 S S 5.15 mm D G 4 D 8 7 6 5 D D D Bottom View Ordering Information: SiR862DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 25 ± 20 50e 50e 32b, c 22.8b, c 70 50e 4.7b, c 40 80 69 44.4 5.2b, c 3.3b, c - 55 to 150 260 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)f, g W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) b, d t ≤ 10 s Steady State Symbol RthJA RthJC Typical 19 1.2 Maximum 24 1.8 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 65 °C/W. e. Package limited. f. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65672 S10-0041-Rev. A, 11-Jan-10 www.vishay.com 1 New Product SiR862DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta IS ISM VSD trr Qrr ta tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 5 A 0.72 31 22 15 16 TC = 25 °C 50 70 1.1 60 42 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 10 V, RL = 10 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω VDD = 10 V, RL = 10 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz 0.2 VDS = 10 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A VDS = 10 V, VGS = 0 V, f = 1 MHz 3800 890 344 60 28.4 9.3 7.0 1.1 28 16 39 17 12 9 33 9 2.2 55 30 75 34 24 18 65 18 ns Ω 90 43 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 25 V, VGS = 0 V VDS = 25 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 10 A VDS = 10 V, ID = 15 A 30 0.0023 0.0028 80 0.0028 0.0035 1.2 25 25 - 5.8 2.3 ± 100 1 10 V mV/°C V nA µA A Ω S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65672 S10-0041-Rev. A, 11-Jan-10 New Product SiR862DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 10 56 I D - Drain Current (A) VGS = 10 V thru 3 V I D - Drain Current (A) 8 TC = 125 °C 6 42 28 4 TC = - 55 °C 2 14 VGS = 2 V 0 0.0 TC = 25 °C 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0030 VGS = 4.5 V RDS(on) - On-Resistance (Ω) 0.0028 C - Capacitance (pF) 3680 4600 Transfer Characteristics Ciss 0.0026 2760 0.0024 1840 Coss 0.0022 VGS = 10 V 920 Crss 0.0020 0 14 28 42 56 70 0 0 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 10 A - Gate-to-Source Voltage (V) 8 VDS = 5 V 6 VDS = 10 V 4 VDS = 15 V R DS(on) - On-Resistance (Normalized) 1.4 1.6 ID = 10 A Capacitance VGS = 10 V 1.2 VGS = 4.5 V 1.0 GS V 2 0.8 0 0 13 26 39 52 65 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - TotalGateCharge (nC) TJ - JunctionTemperature (°C) Gate Charge Document Number: 65672 S10-0041-Rev. A, 11-Jan-10 On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiR862DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 TJ = 150 °C R DS(on) - On-Resistance (Ω) 10 I S - Source Current (A) TJ = 25 °C 1 0.015 ID = 15 A 0.012 0.009 0.1 0.006 TJ = 125 °C 0.003 TJ = 25 °C 0.01 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.5 ID = 250 µA 0.2 V GS(th) Variance (V) 160 200 On-Resistance vs. Gate-to-Source Voltage ID = 5 mA - 0.4 Power (W) - 0.1 120 80 - 0.7 40 - 1.0 - 50 - 25 0 25 50 75 100 125 150 0 0 .0 0 1 0.01 0.1 Time (s) 1 10 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on)* 1 ms 10 I D - Drain Current (A) 10 ms Single Pulse Power 100 ms 1 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 1 BVDSS Limited 10 100 DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65672 S10-0041-Rev. A, 11-Jan-10 New Product SiR862DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 130 104 ID - Drain Current (A) 78 52 Package Limited 26 0 0 25 50 75 100 125 150 TC - CaseTemperature (°C) Current Derating* 90 2.5 72 2.0 Power (W) Power (W) 54 1.5 36 1.0 18 0.5 0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 TC - CaseTemperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65672 S10-0041-Rev. A, 11-Jan-10 www.vishay.com 5 New Product SiR862DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 PDM t1 t2 1. Duty Cycle, D = t1 t2 Notes: 0.05 0.02 0.01 10 -4 10 -3 10 - 2 Single Pulse -1 10 1 Square Wave Pulse Duration (s) 10 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65672. www.vishay.com 6 Document Number: 65672 S10-0041-Rev. A, 11-Jan-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1