SIR866DP

SiR866DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0019 at VGS = 10 V 0.00255 at VGS = 4.5 V ID (A)a 60g 60g Qg (Typ.) 35.3 nC FEATURES • • • • • • Halogen-free TrenchFET® Gen III Power MOSFET Low RDS(on) PWM (Qgd and Rg) Optimized 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm • Fixed Telecom • Low-Side dc-to-dc • OR-ing D G Bottom View Ordering Information: SiR866DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 ± 20 60g 60g 39b, c 31b, c 80 60g 4.9b, c 40 80 83 53 5.4b, c 3.4b, c - 55 to 150 260 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t ≤ 10 s 18 23 Maximum Junction-to-Ambientb, f °C/W RthJC 1.0 1.5 Maximum Junction-to-Case (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. g. Package Limited. Document Number: 68751 S-81712-Rev. A, 04-Aug-08 www.vishay.com 1 Parameter SiR866DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 µA I D = 5 mA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 20 A Min. 20 Typ. Max. Unit V 20 - 6.4 1.2 2.3 ± 100 1 10 30 0.0015 0.00205 78 0.0019 0.00255 mV/°C V nA µA A Ω S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta 4730 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 15 A VDS = 10 V, VGS = 4.5 V, ID = 15 A f = 1 MHz VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 0.2 1310 540 71 35.3 11.7 9.5 0.95 42 23 66 49 20 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 8 46 9 TC = 25 °C IS = 4 A 0.72 40 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 34 19 21 1.9 80 45 120 90 40 16 90 15 60 80 1.1 70 60 ns Ω 107 53 nC pF A V ns nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68751 S-81712-Rev. A, 04-Aug-08 SiR866DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 VGS = 10 thru 4 V 64 I D - Drain Current (A) I D - Drain Current (A) VGS = 3 V 48 8 10 6 TC = 25 °C 4 TC = 125 °C 2 TC = - 55 °C 32 16 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0024 6000 Transfer Characteristics Ciss R DS(on) - On-Resistance (Ω) 0.0022 C - Capacitance (pF) VGS = 4.5 V 0.0020 4800 3600 0.0018 2400 Coss 1200 Crss 0.0016 VGS = 10 V 0.0014 0 16 32 48 64 80 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 VGS - Gate-to-Source Voltage (V) ID = 15 A 8 VDS = 10 V 6 VDS = 15 V 4 VDS = 20 V R DS(on) - On-Resistance 1.5 1.7 ID = 10 A Capacitance VGS = 10 V (Normalized) 1.3 VGS = 4.5 V 1.1 2 0.9 0 0 16 32 48 64 80 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge Document Number: 68751 S-81712-Rev. A, 04-Aug-08 On-Resistance vs. Junction Temperature www.vishay.com 3 SiR866DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.010 ID = 20 A R DS(on) - On-Resistance (Ω) 10 I S - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 0.008 0.006 0.1 0.004 TJ = 125 °C 0.002 TJ = 25 °C 0.01 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.5 200 On-Resistance vs. Gate-to-Source Voltage 0.2 VGS(th) Variance (V) 160 - 0.1 ID = 5 mA - 0.4 ID = 250 µA - 0.7 Power (W) 120 80 40 - 1.0 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (s) 1 10 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on)* Single Pulse Power, Junction-to-Ambient 1 ms 10 I D - Drain Current (A) 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse BVDSS Limited DC 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68751 S-81712-Rev. A, 04-Aug-08 SiR866DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 170 136 I D - Drain Current (A) 102 Package Limited 68 34 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 100 2.5 80 2.0 Power (W) 60 Power (W) 0 25 50 75 100 125 150 1.5 40 1.0 20 0.5 0 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68751 S-81712-Rev. A, 04-Aug-08 www.vishay.com 5 SiR866DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = Notes: 0.02 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 0.01 10 -4 10 -3 10 -2 Single Pulse 10 -1 1 Square Wave Pulse Duration (s) 10 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68751. www.vishay.com 6 Document Number: 68751 S-81712-Rev. A, 04-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1