SIR882ADP

New Product SiR882ADP Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. 0.0087 at VGS = 10 V 0.0094 at VGS = 7.5 V 0.0115 at VGS = 4.5 V PowerPAK® SO-8 FEATURES ID (A)a 60 60 60 19.5 nC Qg (Typ.) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Primary Side Switch • Telecom/Server 48 V, Full/Half-Bridge DC/DC • Industrial D 6.15 mm S 1 2 3 S S 5.15 mm G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiR882ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L =0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Temperature)d, e Symbol VDS VGS ID Limit 100 ± 20 60a 55 17.6b, c 13.9b, c 80 60a 4.9b, c 30 45 83 53 5.4b, c 3.4b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak TJ, Tstg °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t  10 s 18 23 Maximum Junction-to-Ambientb, f °C/W RthJC Steady State Maximum Junction-to-Case (Drain) 1 1.5 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. Document Number: 63367 S11-1662-Rev. A, 15-Aug-11 www.vishay.com 1 Parameter This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiR882ADP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time a Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Test Conditions VGS = 0, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 7.5 V, ID = 17 A VGS = 4.5 V, ID = 15 A VDS = 10 V, ID = 20 A Min. 100 Typ. Max. Unit V 67 - 5.8 1.2 2.8 ± 100 1 10 30 0.0072 0.0077 0.0092 60 0.0087 0.0094 0.0115 mV/°C V nA µA A  S 1975 VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 20 A 748 60 39.5 30.3 19.5 5.7 8.3 VDS = 50 V, VGS = 0 V f = 1 MHz VDD = 50 V, RL = 5  ID  10 A, VGEN = 10 V, Rg = 1  0.2 61 0.95 11 12 34 9 13 VDD = 50 V, RL = 5  ID  10 A, VGEN = 7.5 V, Rg = 1  14 32 10 TC = 25 °C IS = 5 A 0.74 49 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 54 24 25 92 1.9 22 24 65 18 26 24 60 20 60 80 1.1 95 105 ns  60 45.5 29.5 nC VDS = 50 V, VGS = 7.5 V, ID = 20 A VDS = 50 V, VGS = 4.5 V, ID = 20 A pF Qg Qgs Qgd Qoss Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb A V ns nC ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 63367 S11-1662-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiR882ADP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 VGS = 10 V thru 4 V 64 ID - Drain Current (A) 8 10 ID - Drain Current (A) 48 6 TC = 25 °C 32 4 16 VGS = 3 V VGS = 2 V 0.0 0.5 1.0 1.5 2.0 2.5 2 TC = 125 °C TC = - 55 °C 0 1 2 3 4 5 0 0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.011 Transfer Characteristics 3100 0.010 RDS(on) - On-Resistance (Ω) 2480 C - Capacitance (pF) VGS = 4.5 V Ciss 1860 0.009 0.008 VGS = 7.5 V 1240 Coss 620 0.007 VGS = 10 V Crss 0.006 0 16 32 48 64 80 ID - Drain Current (A) 0 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 ID = 20 A 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) VDS = 50 V 2.0 ID = 20 A 1.7 VGS = 10 V 6 VDS = 25 V 4 VDS = 75 V 1.4 VGS = 4.5 V 1.1 2 0.8 0 0 9 18 27 36 45 Qg - Total Gate Charge (nC) 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 63367 S11-1662-Rev. A, 15-Aug-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiR882ADP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.040 ID = 20 A 10 1 TJ = 25 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C 0.032 0.024 0.1 0.016 TJ = 125 °C 0.01 0.008 TJ = 25 °C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.000 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.5 200 On-Resistance vs. Gate-to-Source Voltage 0.2 160 VGS(th) - Variance (V) ID = 5 mA - 0.4 Power (W) - 0.1 120 80 - 0.7 ID = 250 μA 40 - 1.0 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) 0.1 Time (s) 1 10 Threshold Voltage 100 IDM Limited Single Pulse Power, Junction-to-Ambient 10 ID - Drain Current (A) ID Limited 1 ms 10 ms 1 Limited by RDS(on)* 100 ms 1s TC = 25 °C Single Pulse 10 s BVDSS Limited DC 0.1 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 63367 S11-1662-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiR882ADP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 64 ID - Drain Current (A) Package Limited 48 32 16 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 100 2.5 80 2.0 Power (W) 40 Power (W) 60 1.5 1.0 20 0.5 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 0 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63367 S11-1662-Rev. A, 15-Aug-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiR882ADP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 1. Duty Cycle, D = t2 0.02 Single Pulse 3. TJM - TA = PDMZthJA (t) 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 Square Wave Pulse Duration (s) 0.1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63367. www.vishay.com 6 Document Number: 63367 S11-1662-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1