SiS376DN
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) 20 RDS(on) () Max. 0.0058 at VGS = 10 V 0.0084 at VGS = 4.5 V
PowerPAK® 1212-8
ID (A)a 35
Qg (Typ.) 7.7 nC
35
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Note book PC - Synchronous Buck Converters - High Side • POL
D
3.30 mm
S 1 2 3 S S
3.30 mm
G 4
D 8 7 6 5 D D D
G
Bottom View Ordering Information: SiS376DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS IS Limit 20 ± 20 35a 35a 22b, c 17.8b, c 50 25 31 27 3b, c 33 21 3.6b, c 2.3b, c - 55 to 150 260 Unit V
A
mJ A
TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
PD TJ, Tstg
W
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t 10 s Steady State Symbol RthJA RthJC Typical 28 2.9 Maximum 35 3.8 Unit °C/W
Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 81 °C/W. Document Number: 63304 S11-1660-Rev. A, 15-Aug-11 www.vishay.com 1
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS376DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 3 A, VGS 0 V 0.75 19 8.5 10 9 TC = 25 °C 27 50 1.2 35 17 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 10 V, RL = 1 ID 10 A, VGEN = 10 V, Rg = 1 VDD = 10 V, RL = 1 ID 10 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz 0.4 VDS = 10 V, VGS = 10 V, ID = 10 A VDS = 10 V, VGS = 4.5 V, ID = 10 A VDS = 10 V, VGS = 0 V, f = 1 MHz 930 370 95 16.5 7.7 2.7 3.3 1.4 17 12 14 8 9 9 16 7 2.8 34 24 28 16 18 18 30 14 ns 25 11.5 nC pF VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = 10 V VGS 10 V, ID = 10 A VGS 4.5 V, ID = 7 A VDS = 15 V, ID = 10 A 30 0.0047 0.0069 50 0.0058 0.0084 1.4 20 19 - 5.3 2.5 ± 100 1 5 V mV/°C V nA µA A S Symbol Test Conditions Min. Typ. Max. Unit
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 63304 S11-1660-Rev. A, 15-Aug-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS376DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50 VGS = 10 V thru 4 V 40 ID - Drain Current (A) 8 10
ID - Drain Current (A)
30
6 TC = 25 °C 4
20
10 VGS = 3 V 0 0.0 VGS = 2 V 2.5
2
TC = 125 °C TC = - 55 °C 0 1 2 3 4 5
0
0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.009
Transfer Characteristics
1500
0.008 RDS(on) - On-Resistance (Ω)
1200
C - Capacitance (pF)
VGS = 4.5 V
Ciss 900
0.007
0.006
600 Coss 300
0.005 VGS = 10 V 0.004 0 10 20 30 40 50 ID - Drain Current (A)
Crss 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10 ID = 10 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 5 V 4 VDS = 15 V 1.4 1.6 ID = 10 A
Capacitance
VGS = 10 V
1.2 VGS = 4.5 V 1.0
2
0.8
0 0.0 3.4 6.8 10.2 13.6 Q - Total Gate Charge (nC)
g
17.0
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63304 S11-1660-Rev. A, 15-Aug-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS376DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.030
10 IS - Source Current (A)
TJ = 25 °C 1
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
0.024
ID = 10 A
0.018
0.1
0.012 TJ = 125 °C 0.006 TJ = 25 °C
0.01
0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)
0.000 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
100
On-Resistance vs. Gate-to-Source Voltage
0.2
VGS(th) - Variance (V)
80
0
ID = 5 mA
Power (W) 60
- 0.2
40
- 0.4 ID = 250 μA - 0.6
20
- 0.8 - 50
- 25
0
25
50
75
100
125
150
0 0.001
0.01
0.1 Time (s)
1
10
TJ - Temperature (°C)
Threshold Voltage
100 IDM Limited
Single Pulse Power (Junction-to-Ambient)
100 μs 10
ID - Drain Current (A)
ID Limited 1 ms
1
Limited by RDS(on)*
10 ms 100 ms
0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 1
1s 10 s DC BVDSS Limited 10 100
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 63304 S11-1660-Rev. A, 15-Aug-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS376DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
50 ID - Drain Current (A)
40
30
Package Limited
20
10
0 0 25 50 75 100 125 150 TC - Case Temperature (°C)
Current Derating*
40
2.0
32
1.6
Power (W)
16
Power (W)
0 25 50 75 100 125 150
24
1.2
0.8
8
0.4
0 TC - Case Temperature (°C)
0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C)
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 63304 S11-1660-Rev. A, 15-Aug-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS376DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2
Notes:
0.1
0.1
PDM
0.05
t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 81 °C/W
0.02 Single Pulse
3. T JM - TA = PDMZthJA(t) 4. Surface Mounted
0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.05 0.02 Single Pulse
0.1
0.01 0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63304.
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Document Number: 63304 S11-1660-Rev. A, 15-Aug-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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