SiS426DN
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.0045 at VGS = 10 V 0.0058 at VGS = 4.5 V ID (A)f 35g 35g Qg (Typ.) 13.2 nC
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC
PowerPAK 1212-8
APPLICATIONS
3.30 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
3.30 mm
• POL • DC/DC
D
G
Bottom View Ordering Information: SiS426DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 ± 20 35g 35g 22.0a, b 20.0a, b 70 35g 3.3a, b 20 20 52 43 3.7a, b 3.1a, b - 55 to 150 260 Unit V
A
mJ W
TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 24 1.9 Maximum 33 2.4 Unit °C/W
Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 °C/W. f. Based on TC = 25 °C. g. Package limited. Document Number: 68799 S09-1906-Rev. B, 21-Sep-09 www.vishay.com 1
SiS426DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 3 A, VGS = 0 V 0.75 22 10 11 11 TC = 25 °C 35 70 1.1 44 20 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz 0.2 VDS = 10 V, VGS = 10 V, ID = 10 A VDS = 10 V, VGS = 4.5 V, ID = 10 A VDS = 10 V, VGS = 0 V, f = 1 MHz 1570 555 195 28 13.2 3.8 4.0 0.70 21 13 29 17 10 8 22 8 1.4 35 26 55 30 20 16 40 16 ns Ω 42 20 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 7 A VDS = 10 V, ID = 10 A 20 0.0033 0.0046 50 0.0045 0.0058 1.2 20 20 - 4.5 2.5 ± 100 1 10 V mV/°C V nA µA A Ω S Symbol Test Conditions Min. Typ. Max. Unit
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 68799 S09-1906-Rev. B, 21-Sep-09
SiS426DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70 VGS = 10 V thru 4 V 56 I D - Drain Current (A) I D - Drain Current (A) 4 5
42 VGS = 3 V 28
3 TC = 25 °C 2
14
1 TC = 125 °C TC = - 55 °C 0 1 2 3 4
0 0.0
0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.0060 2000
Transfer Characteristics
Ciss R DS(on) - On-Resistance (Ω) 0.0054 C - Capacitance (pF) VGS = 4.5 V 0.0048 1600
1200
0.0042
800 Coss 400 Crss
0.0036
VGS = 10 V
0.0030 0 14 28 42 56 70
0 0 4 8 12 16 20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10 ID = 10 A VGS - Gate-to-Source Voltage (V) 8 VDS = 5 V VDS = 10 V 6 VDS = 15 V 4 R DS(on) - On-Resistance 1.8 ID = 10 A 1.6
Capacitance
VGS = 10 V 1.4 (Normalized)
1.2
VGS = 4.5 V
1.0
2
0.8
0 0 6 12 18 24 30
0.6 - 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68799 S09-1906-Rev. B, 21-Sep-09
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SiS426DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.020 ID = 10 A R DS(on) - On-Resistance (Ω) 10 I S - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 0.016
0.012
0.1
0.008 TJ = 125 °C 0.004 TJ = 25 °C
0.01
0.001 0.0
0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4 100
On-Resistance vs. Gate-to-Source Voltage
0.2 VGS(th) Variance (V)
80
0.0 Power (W) 150 60
- 0.2
ID = 5 mA
40
- 0.4 ID = 250 µA - 0.6 20
- 0.8 - 50
- 25
0
25
50
75
100
125
0 0.001
0.01
0.1 Time (s)
1
10
100
TJ - Temperature (°C)
Threshold Voltage
100 Limited by RDS(on)* 10 I D - Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 DC BVDSS Limited 100
0.1 1 10 VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68799 S09-1906-Rev. B, 21-Sep-09
SiS426DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
90
72 I D - Drain Current (A)
54 Package Limited 36
18
0 0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
65 2.0
52
1.6
Power (W)
26
Power (W) 0 25 50 75 100 125 150
39
1.2
0.8
13
0.4
0
0.0 0 25 50 75 100 125 150
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 68799 S09-1906-Rev. B, 21-Sep-09
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SiS426DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05
PDM t1 Notes:
0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 81 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.02 Single Pulse 0.05
0.01 10 -4
10 -3
10 -2 Square Wave Pulse Duration (s)
10 -1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68799.
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Document Number: 68799 S09-1906-Rev. B, 21-Sep-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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