New Product
SiS444DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) 30 RDS(on) () Max. 0.0033 at VGS = 10 V 0.0043 at VGS = 4.5 V ID (A)f 35
g
Qg (Typ.) 33.5 nC
35g
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
PowerPAK® 1212-8
APPLICATIONS
• • • • Motor Control Industrial Load Switch ORing
D
G 4
3.30 mm
S 1 2 3 S S
3.30 mm
D 8 7 6 5 D D D
G N-Channel MOSFET
Bottom View Ordering Information: SiS444DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 35g 35g 24.9a, b 20a, b 70 35g 3.3a, b 20 20 52 43 3.7a, b 3.1a, b - 55 to 150 260 Unit V
A
mJ W
TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t 10 s Steady State Symbol RthJA RthJC Typical 24 1.9 Maximum 33 2.4 Unit °C/W
Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 °C/W. f. Based on TC = 25 °C. g. Package limited. Document Number: 63276 S11-1379-Rev. A, 11-Jul-11 www.vishay.com 1
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiS444DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 3 A, VGS 0 V 0.7 21 10 9 12 TC = 25 °C 35 70 1.1 40 20 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz 0.3 VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A VDS = 15 V, VGS = 0 V, f = 1 MHz 3065 406 360 68 33.5 7.7 13.8 0.7 24 24 32 12 14 13 33 8 1.4 45 45 60 24 28 26 60 16 ns 102 51 nC pF VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = 10 V VGS 10 V, ID = 10 A VGS 4.5 V, ID = 7 A VDS = 15 V, ID = 10 A 30 0.0026 0.0034 65 0.0033 0.0043 1.2 30 30 - 5.6 2.3 ± 100 1 10 V mV/°C V nA µA A S Symbol Test Conditions Min. Typ. Max. Unit
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 63276 S11-1379-Rev. A, 11-Jul-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiS444DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70 VGS = 10 V thru 4 V 56 ID - Drain Current (A) ID - Drain Current (A)
8 10
42 VGS = 3 V 28
6
TC = 25 °C
4
14 VGS = 2 V 0 0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V) 2.5
2 TC = 125 °C 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) TC = - 55 °C
Output Characteristics
Transfer Characteristics
0.0040
4500
0.0036 RDS(on) - On-Resistance (Ω) VGS = 4.5 V 0.0032
3600
C - Capacitance (pF)
Ciss 2700
0.0028 VGS = 10 V 0.0024
1800
900 Crss
Coss
0.0020 0 12 24 36 ID - Drain Current (A) 48 60
0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10 ID = 10 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 8 VDS = 15 V 6 VDS = 10 V 4 VDS = 20 V
1.8 ID = 10 A 1.6 VGS = 10 V 1.4
1.2
VGS = 4.5 V
1.0
2
0.8
0 0 14 28 42 Qg - Total Gate Charge (nC) 56 70
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63276 S11-1379-Rev. A, 11-Jul-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiS444DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.015 ID = 10 A
10 IS - Source Current (A)
1
TJ = 25 °C
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
0.012
0.009
0.1
0.006 TJ = 125 °C 0.003 TJ = 25 °C
0.01
0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)
0.000 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
100
0.2
VGS(th) - Variance (V)
80
0 Power (W) 125 150
ID = 5 mA
60
- 0.2
40
- 0.4
ID = 250 μA
- 0.6
20
- 0.8 - 50
- 25
0
25
50
75
100
0 0.001
0.01
0.1 Time (s)
1
10
100
TJ - Temperature (°C)
Threshold Voltage
100 IDM Limited ID Limited
Single Pulse Power, Junction-to-Ambient
100 μs
10 ID - Drain Current (A)
1 ms 1 Limited by RDS(on)* 10 ms 100 ms 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1s 10 s DC BVDSS Limited
Safe Operating Area, Junction-to-Ambient
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Document Number: 63276 S11-1379-Rev. A, 11-Jul-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiS444DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
80
ID - Drain Current (A)
60
40
Limited by Package
20
0 0 25 50 75 100 125 150 TC - Case Temperature (°C)
Current Derating*
65
2.0
52
1.6
Power (W)
26
Power (W)
39
1.2
0.8
13
0.4
0 0 25 50 75 100 125 150
TC - Case Temperature (°C)
0.0 0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 63276 S11-1379-Rev. A, 11-Jul-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiS444DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2
Notes:
0.1
0.1
PDM
0.05
t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 81 °C/W 3. T JM - TA = PDMZthJA(t)
0.02 Single Pulse
4. Surface Mounted
0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.05 0.02 Single Pulse
0.1
0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63276.
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Document Number: 63276 S11-1379-Rev. A, 11-Jul-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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