SiZ300DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V) Channel-1 30 RDS(on) () 0.0240 at VGS = 10 V 0.0320 at VGS = 4.5 V 0.0110 at VGS = 10 V 0.0165 at VGS = 4.5 V ID (A)a Qg (Typ.) 11 11 28 28 3.5 nC
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • PowerPAIR Optimizes High-Side and Low-Side MOSFETs for Synchronous Buck Converters • TrenchFET® Power Mosfets • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
Channel-2
30
21.2 nC
APPLICATIONS
PowerPAIR® 3 x 3
Pin 1 G1 D1 1 2 D1 8 G2 S1/D2 7 S2 3 4 G1 N-Channel 1 MOSFET
3m m
m m D1 3
• Computing System Power • POL • Synchronous Buck Converter
D1
D1
S1/D2
6 S2 5 S2
G2 N-Channel 2 MOSFET S2
Ordering Information: SiZ300DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS Channel-1 30 ± 20 11a 11a 9.8b, c 7.8b, c 30 11a 3.2b, c 12 7 16.7 10.7 3.7b, c 2.4b, c 28a 28a 14.9b, c 11.9b, c 40 26 3.8b, c 15 11 31 20 4.2b, c 2.7b, c mJ Channel-2 Unit V
Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current Avalanche Current Single Pulse Avalanche Energy
A
Maximum Power Dissipation
PD
W
TJ, Tstg - 55 to 150 °C 260 Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Operating Junction and Storage Temperature Range Document Number: 67715 S11-1646-Rev. B, 15-Aug-11 www.vishay.com 1
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SiZ300DT
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Channel-1 Parameter t 10 s 27 Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain) Steady State 6 Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2. Symbol RthJA RthJC Typ. Max. 34 7.5 Channel-2 Typ. 24 3.2 Max. 30 4 Unit °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate Source Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0, ID = 250 µA VGS = 0 V, ID = 250 µA ID = 250 µA ID = 250 µA ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS = 30 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS 5 V, VGS = 10 V VDS 5 V, VGS = 10 V VGS = 10 V, ID = 9.8 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 8.5 A VGS = 4.5 V, ID = 12 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 9.8 A Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 15 A Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 9.8 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 15 A f = 1 MHz Ch-1 Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.5 0.5 400 730 125 155 25 65 7.4 14.2 3.5 6.8 1.5 2.2 1.1 2.3 2.6 2.6 5.2 5.2 12 22 5.3 11 nC pF gfs VDS = 15 V, ID = 9.8 A VDS = 15 V, ID = 15 A Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 10 10 0.0200 0.0240 0.0090 0.0110 0.0265 0.0320 0.0135 0.0165 30 30 S 1 1 30 30 24 30 - 4.1 -5 2.4 2.2 ± 100 ± 100 1 1 5 5 A µA V nA mV/°C V Symbol Test Conditions Min. Typ. Max. Unit
Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. www.vishay.com 2 Document Number: 67715 S11-1646-Rev. B, 15-Aug-11
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SiZ300DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time
a
Symbol
Test Conditions Ch-1 Channel-1 VDD = 15 V, RL = 1.9 ID 8 A, VGEN = 4.5 V, Rg = 1 Channel-2 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Channel-1 VDD = 15 V, RL = 1.9 ID 8 A, VGEN = 10 V, Rg = 1 Channel-2 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 IS = 8 A, VGS = 0 V IS = 10 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Ch-2 Channel-1 IF = 8 A, dI/dt = 100 A/µs, TJ = 25 °C Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2
Min.
Typ. 25 25 45 80 10 20 10 40 5 5 10 20 10 15 7 10
Max. 50 50 90 160 20 40 20 80 10 10 20 40 20 30 15 20 11 26 30 40
Unit
td(on) tr td(off) tf td(on) tr td(off) tf
ns
IS ISM VSD trr Qrr ta tb
TC = 25 °C
A
0.84 0.82 17 20 9 14 9.5 12.5 7.5 7.5
1.2 1.2 35 40 20 30
V ns nC
ns
Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Document Number: 67715 S11-1646-Rev. B, 15-Aug-11
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SiZ300DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30 20
25 ID - Drain Current (A) VGS = 10 V thru 4 V 20
16
ID - Drain Current (A)
12
TC = 25 °C
15
8 TC = 125 °C TC = - 55 °C
10
5
VGS = 3 V
4
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V)
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.05 600
Transfer Characteristics
0.04 RDS(on) - On-Resistance (Ω)
500
C - Capacitance (pF)
VGS = 4.5 V 0.03
400
Ciss
300
0.02 VGS = 10 V 0.01
200 Coss 100 Crss
0 0 5 10 15 20 ID - Drain Current (A) 25 30
0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30
On-Resistance vs. Drain Current
10 RDS(on) - On-Resistance (Normalized) VDS = 15 V 1.6 ID = 9.8 A 1.4
Capacitance
VGS = 10 V
VGS - Gate-to-Source Voltage (V)
8
ID = 11 A
VGS = 4.5 V 1.2
6 VDS = 7.5 V 4 VDS = 24 V
1.0
2
0.8
0 0 2 4 6 Qg - Total Gate Charge (nC) 8
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 67715 S11-1646-Rev. B, 15-Aug-11
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SiZ300DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.06
10
RDS(on) - On-Resistance (Ω)
TJ = 150 °C IS - Source Current (A)
0.05
ID = 9.8 A
0.04 TJ = 125 °C
0.03
1
TJ = 25 °C
0.02 TJ = 25 °C 0.01
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)
0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10
Source-Drain Diode Forward Voltage
2.4
50
On-Resistance vs. Gate-to-Source Voltage
2.2
40
Power (W)
VGS(th) (V)
2.0
30
1.8
ID = 250 μA
20
1.6
10
1.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C)
0 0.001 0.01 0.1 1 Time (s) 10 100 1000
Threshold Voltage
100
Single Pulse Power
Limited by RDS(on)*
10
ID - Drain Current (A)
100 μs 1 ms
1
10 ms 100 ms 1s 10 s DC BVDSS Limited
0.1
TA = 25 °C Single Pulse
0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67715 S11-1646-Rev. B, 15-Aug-11
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SiZ300DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25 20
20
16
ID - Drain Current (A)
Package Limited 10
Power (W)
15
12
8
5
4
0 0 25 50 75 100 TC - Case Temperature (°C) 125 150
0 25 50 75 100 125 150 TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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Document Number: 67715 S11-1646-Rev. B, 15-Aug-11
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SiZ300DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 69 °C/W 3. TJM - TA = PDMZthJA(t)
0.1 0.05 0.02
Single Pulse 0.01 0.0001 0.001 0.01 0.1 1
4. Surface Mounted
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2
0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 Square Wave Pulse Duration (s) 0.1 1
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 67715 S11-1646-Rev. B, 15-Aug-11
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SiZ300DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40 35 30
ID - Drain Current (A) 20
VGS = 10 V thru 4 V
16
25 20 15 10 VGS = 3 V
ID - Drain Current (A)
12
TC = 25 °C
8 TC = 125 °C TC = - 55 °C 0
4
5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 3.0
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.025
1000
Transfer Characteristics
0.020 RDS(on) - On-Resistance (Ω)
C - Capacitance (pF) VGS = 4.5 V
800 Ciss 600
0.015
0.010
VGS = 10 V
400 Coss 200 Crss
0.005
0 0 10 20
ID - Drain Current (A)
0
30
40
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
RDS(on) - On-Resistance (Normalized)
Capacitance
1.8
VGS - Gate-to-Source Voltage (V)
8
ID = 11 A
VDS = 15 V
1.6
ID = 15 A
VGS = 10 V
1.4
6 VDS = 7.5 V 4 VDS = 24 V
VGS = 4.5 V
1.2
1.0
2
0.8
0 0 3 6 9 12 Qg - Total Gate Charge (nC) 15
0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 67715 S11-1646-Rev. B, 15-Aug-11
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SiZ300DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.05
10
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
0.04
ID = 15 A
IS - Source Current (A)
0.03
1
TJ = 25 °C
0.02
TJ = 125 °C
0.01 TJ = 25 °C
0.1 0.0
0
0.2 0.4 0.6 0.8 1.0 1.2
0
VSD - Source-to-Drain Voltage (V)
2 4 6 8 VGS - Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
2.0
On-Resistance vs. Gate-to-Source Voltage
50
1.8
40
Power (W)
125 150
VGS(th) (V)
1.6
30
1.4
ID = 250 μA
20
1.2
10
1.0 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C)
0 0.001 0.01 0.1 1 Time (s) 10 100 1000
Threshold Voltage
100 Limited by RDS(on)*
Single Pulse Power
10 ID - Drain Current (A)
100 μs 1 ms
1
10 ms 100 ms 1s 10 s TA = 25 °C Single Pulse BVDSS Limited DC
0.1
0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100
Safe Operating Area, Junction-to-Ambient
Document Number: 67715 S11-1646-Rev. B, 15-Aug-11
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SiZ300DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50 40
40 30
ID - Drain Current (A)
Power (W)
30
Package Limited 20
20
10 10
0 0 25 50 75 100 TC - Case Temperature (°C) 125 150
0 25 50 75 100 125 150 TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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Document Number: 67715 S11-1646-Rev. B, 15-Aug-11
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SiZ300DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 64 °C/W
t1 t2
Single Pulse 0.01 0.0001 0.001 0.01 0.1 1
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.05 Single Pulse 0.02 0.1 0.0001 0.001 0.01 Square Wave Pulse Duration (s) 0.1 1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67715.
Document Number: 67715 S11-1646-Rev. B, 15-Aug-11
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Package Information
Vishay Siliconix
PowerPAIR 3 x 3 CASE OUTLINE
D 0.10 C 2x 8 7 6 5 L A A1 K2 5 6 D1 7 8 K2
E
K1
E2 0.10 C 1 2 3 4 2x 0.10 Pin 1 Dent 0.15 4 e b1 0.10 C A C c 3 2 1 b 0.08 C
MILLIMETERS DIM. A A1 b b1 C D D1 E E1 E2 e K K1 K2 L 0.27 ECN: T11-0071-Rev. A, 14-Mar-11 DWG: 5998 0.94 0.47 2.35 MIN. 0.70 0.00 0.35 0.20 0.18 0.40 0.25 0.20 3.00 2.40 3.00 0.99 0.52 0.65 0.25 0.35 0.30 0.32 1.04 0.57 BSC TYP. TYP. TYP. 0.37 0.011 0.037 0.019 2.45 0.093 NOM. 0.75 MAX. 0.80 0.05 0.45 0.38 0.23 MIN. 0.028 0.000 0.014 0.008 0.007
INCHES NOM. 0.030 0.016 0.010 0.008 0.118 0.094 0.118 0.039 0.020 0.026 0.010 0.014 0.012 0.013 0.041 0.022 BSC TYP. TYP. TYP. 0.015 0.096 MAX. 0.031 0.002 0.018 0.015 0.009
Document Number: 67698 Revison: 14-Mar-11
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E1
K
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3
0.450 (0.018) 0.650 (0.026) 0.450 (0.018)
0.209 (0.008)
0.084 (0.003) 0.390 (0.015)
(0.041)
2.450 (0.096) 1.036
0.306 (0.012)
(0.063)
1.611
1.200 (0.047)
Recommended PAD for PowerPAIR 3 x 3 Dimensions in millimeters (inches) Keep-Out 3.5 mm x 3.5 mm for non terminating traces
Document Number: 63294 Revision: 25-May-11
(0.022)
0.562
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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