New Product
SiZ702DT
Vishay Siliconix
N-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V) Channel-1 and Channel-2 30 RDS(on) (Ω) 0.012 at VGS = 10 V 0.0145 at VGS = 4.5 V ID (A) 16a 16a 6.8 nC Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
PowerPAIR™ 6 x 3.7
Pin 1 G1 1 2 D1 G2 6 S2 5 S2 4 S1/D2 6.00 mm 6 3 GLS GND 5 GND 4 N-Channel 2 MOSFET VSW GLS/G2 D1 D1 3.73 mm 1 2 VIN 3 GHS
VIN/D1
• Notebook System Power • POL • Low Current dc-to-dc
VIN VIN GHS/G1 N-Channel 1 MOSFET VSW/S1/D2
Ordering Information: SiZ702DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
GND/S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 27 17.4 3.9b, c 2.5b, c - 55 to 150 260 16a 3.2
b, c
Channel-1 30 ± 20 16a 16a 13.8b, c 11b, c 50
Channel-2
Unit V
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source Drain Current Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
14b, c 11.2b, c 16a 3.7b, c 18 16 30 19 4.5b, c 2.9b, c
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Channel-1 Parameter
b, f
Channel-2 Typ. 21 3.2 Max. 28 4.2 Unit
Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 67 °C/W for Channel-1 and for Channel-2. Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 www.vishay.com 1
t ≤ 10 s
Symbol RthJA RthJC
Typ. 24 3.5
Max. 32 4.6
New Product
SiZ702DT
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 13.8 A Drain-Source On-State Resistanceb RDS(on) VGS = 4.5 V, ID = 12.6 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 15 V, VGS = 10 V, ID = 13.8 A Total Gate Charge Qg VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 VDS = 15 V, VGS = 4.5 V, ID = 13.8 A Ch-1 Ch-2 Ch-1 Ch-2 f = 1 MHz Ch-1 Ch-2 0.4 790 190 76 14 6.8 2.6 1.9 2 4 Ω 21 11 nC pF gfs VDS = 10 V, ID = 13.8 A Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 0.010 0.012 47 0.012 Ω 0.0145 S 1 30 33 mV/°C -5 2.5 ± 100 1 µA 5 A V nA V Symbol Test Conditions Min. Typ. Max. Unit
Gate-Source Charge Gate-Drain Charge Gate Resistance
Qgs Qgd Rg
Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
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Document Number: 65525 S09-2266-Rev. A, 02-Nov-09
New Product
SiZ702DT
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C ta tb IS = 10 A, VGS = 0 V TC = 25 °C Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.8 20 10 11 ns 9 16 A 50 1.2 40 20 V ns nC td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 15 12 20 10 10 12 20 10 25 20 30 15 ns 15 20 30 15 Symbol Test Conditions Min. Typ. Max. Unit
Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Document Number: 65525 S09-2266-Rev. A, 02-Nov-09
www.vishay.com 3
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60 VGS = 10 V thru 4 V 50 I D - Drain Current (A) I D - Drain Current (A) 16 20
40 VGS = 3 V 30
12 TC = 25 °C 8
20
10 VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
4 TC = 125 °C 0 0.0 TC = - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.014 1200
Transfer Characteristics
R DS(on) - On-Resistance (Ω)
1000 VGS = 4.5 V C - Capacitance (pF) 0.012 Ciss 800
0.010
VGS = 10 V
600
400 Coss 200 Crss
0.008
0.006 0 10 20 30 40 50 60
0 0 5 10 15 20 25 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10 ID = 13.8 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance VDS = 15 V 6 VDS = 7.5 V 4 VDS = 24 V 1.7 1.6 1.5 1.4 (Normalized) 1.3 1.2 1.1 1.0 0.9 0.8 0 0 3 6 9 12 15 0.7 - 50 ID = 13.8 A
Capacitance
VGS = 10 V; 4.5 V
2
-- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 65525 S09-2266-Rev. A, 02-Nov-09
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.030 ID = 13.8 A 0.025 R DS(on) - On-Resistance (Ω) I S - Source Current (A)
10
0.020 TJ = 125 °C 0.015 TJ = 25 °C 0.010
TJ = 150 °C 1 TJ = 25 °C
0.005
0.1 0.0
0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
1.9 1.8 1.7 1.6 VGS(th) (V) Power (W) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.001 10 ID = 250 µA 30 40 50
On-Resistance vs. Gate-to-Source Voltage
20
0.01
0.1
1 Time (s)
10
100
1000
TJ - Temperature (°C)
Threshold Voltage
100 Limited by RDS(on)*
Single Pulse Power
10 I D - Drain Current (A)
100 µs 1 ms
1
10 ms 100 ms 1 s, 10 s
0.1
TA = 25 °C Single Pulse BVDSS Limited
DC
0.01 0.1
1
10
100
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65525 S09-2266-Rev. A, 02-Nov-09
www.vishay.com 5
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40 30
25 I D - Drain Current (A) 30 20 Power (W)
20 Package Limited
15
10 10 5
0 0 25 50 75 100 125 150
0 25 50 75 100 125 150
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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Document Number: 65525 S09-2266-Rev. A, 02-Nov-09
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2
2. Per Unit Base = RthJA = 67 °C/W 3. TJM - T A = PDMZthJA(t)
0.01 10 -4
Single Pulse 10 -3 10 -2 10 -1 1 10
4. Surface Mounted
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2
0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 Square Wave Pulse Duration (s) 10 -2 10 -1
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 65525 S09-2266-Rev. A, 02-Nov-09
www.vishay.com 7
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60 VGS = 10 V thru 4 V 50 I D - Drain Current (A) I D - Drain Current (A) 16 20
40 VGS = 3 V 30
12 TC = 25 °C 8
20
10 VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
4 TC = 125 °C 0 0.0 TC = - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.014 1200
Transfer Characteristics
R DS(on) - On-Resistance (Ω)
1000 VGS = 4.5 V C - Capacitance (pF) 0.012 Ciss 800
0.010
VGS = 10 V
600
400 Coss 200 Crss
0.008
0.006 0 10 20 30 40 50 60
0 0 5 10 15 20 25 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10 ID = 13.8 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance VDS = 15 V 6 VDS = 7.5 V 4 VDS = 24 V 1.7 1.6 1.5 1.4 (Normalized) 1.3 1.2 1.1 1.0 0.9 0.8 0 0 3 6 9 12 15 0.7 - 50 ID = 13.8 A
Capacitance
VGS = 10 V; 4.5 V
2
-- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
www.vishay.com 8
Document Number: 65525 S09-2266-Rev. A, 02-Nov-09
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.030 ID = 13.8 A 0.025 R DS(on) - On-Resistance (Ω) I S - Source Current (A)
10
0.020 TJ = 125 °C 0.015 TJ = 25 °C 0.010
TJ = 150 °C 1 TJ = 25 °C
0.005
0.1 0.0
0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
1.9 1.8 1.7 1.6 1.5 VGS(th) (V) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.001 10 ID = 250 µA Power (W) 30 40 50
On-Resistance vs. Gate-to-Source Voltage
20
0.01
0.1
1 Time (s)
10
100
1000
TJ - Temperature (°C)
Threshold Voltage
100 Limited by RDS(on)*
Single Pulse Power
10 I D - Drain Current (A)
100 µs 1 ms
1
10 ms 100 ms 1 s, 10 s
0.1
TA = 25 °C Single Pulse BVDSS Limited
DC
0.01 0.1
1
10
100
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65525 S09-2266-Rev. A, 02-Nov-09
www.vishay.com 9
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 30
40 I D - Drain Current (A)
25
20 Power (W) 30
15
20
Package Limited
10 10
5
0 0 25 50 75 100 125 150
0 25 50 75 100 125 150
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
www.vishay.com 10
Document Number: 65525 S09-2266-Rev. A, 02-Nov-09
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
PDM t1 t2 1. Duty Cycle, D = t1 t2 Notes:
2. Per Unit Base = RthJA = 67 °C/W 3. TJM - T A = PDMZthJA(t)
0.01 10 -4
Single Pulse 10 -3 10 -2 10 -1 1 10
4. Surface Mounted
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2
0.1 0.05 0.02 0.1 10 -4 Single Pulse 10 -3 Square Wave Pulse Duration (s) 10 -2 10 -1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65525.
Document Number: 65525 S09-2266-Rev. A, 02-Nov-09
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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