SM5A27
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
DO-218AB
PRIMARY CHARACTERISTICS
VBR PPPM (10 x 1000 μs) PD IRSM IFSM TJ max. 27 V 3600 W 5W 70 A 500 A 175 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Heatsink is anode per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Peak pulse power dissipation with 10/1000 μs waveform Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially decaying waveform Maximum working stand-off voltage Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range SYMBOL PPPM PD IRSM VWM IFSM TJ, TSTG VALUE 3600 5.0 70 22.0 500 - 55 to + 175 UNIT W W A V A °C
Document Number: 88381 Revision: 18-Apr-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 182 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM5A27
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Reverse Zener voltage Zener voltage temperature coefficient Clamping voltage for 10 μs/10 ms exponentially decaying waveform Instantaneous forward voltage TEST CONDITIONS IZ = 10 mA IZ = 10 mA IPP = 55 A IF = 6.0 A IF = 100 A Reverse leakage current Rated VWM TJ = 25 °C TJ = 175 °C SYMBOL VZ VZTC VC VF (1) MIN. 24.0 IR TYP. 0.95 MAX. 30.0 36 40.0 1.0 V 0.2 μA 10.0 UNIT V mV/°C V
Note (1) Measured on a 300 μs square pulse width
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance, junction to case SYMBOL RJC VALUE 1.0 UNIT °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N SM5A27HE3/2D (1) Note (1) AEC-Q101 qualified UNIT WEIGHT (g) 2.505 PREFERRED PACKAGE CODE 2D BASE QUANTITY 750 DELIVERY MODE 13" diameter plastic tape and reel, anode towards the sprocket hole
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
8.0
3000
2500
Power Dissipation (W)
6.0
Load Dump Power (W)
2000 1500 1000
4.0
2.0
500 0 0 50 100 150 200 0 25 50 75 100 125 150 175
Case Temperature (°C)
Case Temperature (°C)
Fig. 1 - Power Derating Curve
Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform)
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For technical questions within your region, please contact one of the following: Document Number: 88381 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 18-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM5A27
Vishay General Semiconductor
150
Instantaneous Reverse Current (μA)
tr = 10 μs Peak Value IPPM
Input Peak Pulse Current (%)
TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM
100
10
TJ = 175 °C
100
1
Half Value - IPP IPPM 2 50
0.1
0.01 TJ = 25 °C
0.001
td 0 0 10 20 30 40
0.0001 5 20 35 50 65 80 95
t - Time (ms)
Percentage of VBR (%)
Fig. 3 - Pulse Waveform
Fig. 6 - Typical Reverse Characteristics
10 000
100
Transient Thermal Impedance (°C/W)
Reverse Surge Power (W)
10
RθJA
1
RθJC
0.1
1000 10 100
0.01 0.01 0.1 1 10 100
Pulse Width (ms) - ½ IPP Exponential Waveform
t - Pulse Width (s)
Fig. 4 - Reverse Power Capability
Fig. 7 - Typical Transient Thermal Impedance
100
Instantaneous Forward Current (A)
TJ = 150 °C 10
1.0 TJ = 25 °C 0.1
0.01 0.35
0.45
0.55
0.65
0.75
0.85
0.95
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
Document Number: 88381 Revision: 18-Apr-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 184 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM5A27
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) 0.116 (3.0) 0.093 (2.4) 0.413 (10.5) 0.342 (8.7) 0.374 (9.5) 0.327 (8.3)
Mounting Pad Layout
0.150 (3.8) 0.126 (3.2) 0.091 (2.3) 0.067 (1.7) 0.413 (10.5) 0.374 (9.5) 0.116 (3.0) 0.093 (2.4)
0.366 (9.3) 0.343 (8.7) 0.406 (10.3) 0.382 (9.7) 0.197 (5.0) 0.185 (4.7) 0.016 (0.4) MIN. Lead 2/Metal Heatsink
Lead 1
0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) 0.138 (3.5) 0.098 (2.5) 0.028 (0.7) 0.020 (0.5) 0.098 (2.5) 0.059 (1.5)
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For technical questions within your region, please contact one of the following: Document Number: 88381 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 18-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
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Document Number: 91000 Revision: 11-Mar-11
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