SM5S11A

SM5S10 thru SM5S36A Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification (varied by test condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-218AB PRIMARY CHARACTERISTICS VWM PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD IFSM TJ max. 10 V to 36 V 3600 W 2800 W 5W 500 A 175 °C TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Heatsink is anode per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER with 10/1000 μs waveform Peak pulse power dissipation with 10/10 000 μs waveform Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Peak pulse current with 10/1000 μs waveform Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range Note (1) Non-repetitive current pulse at T = 25 °C A PPPM PD IPPM (1) SYMBOL VALUE 3600 UNIT W 2800 5.0 See next table 500 - 55 to + 175 W A A °C IFSM TJ, TSTG Document Number: 88382 Revision: 18-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 186 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM5S10 thru SM5S36A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR (V) MIN. SM5S10 SM5S10A SM5S11 SM5S11A SM5S12 SM5S12A SM5S13 SM5S13A SM5S14 SM5S14A SM5S15 SM5S15A SM5S16 SM5S16A SM5S17 SM5S17A SM5S18 SM5S18A SM5S20 SM5S20A SM5S22 SM5S22A SM5S24 SM5S24A SM5S26 SM5S26A SM5S28 SM5S28A SM5S30 SM5S30A SM5S33 SM5S33A SM5S36 SM5S36A 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 MAX. 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 44.9 40.6 48.9 44.2 TEST CURRENT IT (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 STAND-OFF VOLTAGE VWM (V) 10.0 10.0 11.0 11.0 12.0 12.0 13.0 13.0 14.0 14.0 15.0 15.0 16.0 16.0 17.0 17.0 18.0 18.0 20.0 20.0 22.0 22.0 24.0 24.0 26.0 26.0 28.0 28.0 30.0 30.0 33.0 33.0 36.0 36.0 MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) 15 15 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA) 250 250 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 MAXIMUM MAX. PEAK PULSE CURRENT CLAMPING VOLTAGE AT 10/1000 μs AT IPPM WAVEFORM (A) VC (V) 191 212 179 198 164 181 151 167 140 155 134 148 125 138 118 130 112 123 101 111 91 101 84 93 77 86 72 79 67 74 61 68 56 62 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.1 45.4 53.5 48.4 59.0 53.3 64.3 58.1 Note • For all types maximum VF = 2.0 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum www.vishay.com 187 For technical questions within your region, please contact one of the following: Document Number: 88382 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 18-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM5S10 thru SM5S36A Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to case SYMBOL RJC VALUE 1.0 UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N SM5S10AHE3/2D (1) Note (1) AEC-Q101 qualified UNIT WEIGHT (g) 2.505 PREFERRED PACKAGE CODE 2D BASE QUANTITY 750 DELIVERY MODE 13" diameter plastic tape and reel, anode towards the sprocket hole RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 8.0 150 tr = 10 μs Peak Value IPPM Power Dissipation (W) 6.0 Input Peak Pulse Current (%) TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM 100 4.0 Half Value - IPP IPPM 2 50 2.0 td 0 0 50 100 150 200 0 0 10 20 30 40 Case Temperature (°C) t - Time (ms) Fig. 1 - Power Derating Curve Fig. 3 - Pulse Waveform 3000 10 000 2000 1500 1000 500 0 25 50 75 100 125 150 175 Reverse Surge Power (W) 1000 10 100 2500 Load Dump Power (W) Case Temperature (°C) Pulse Width (ms) - ½ IPP Exponential Waveform Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) Fig. 4 - Reverse Power Capability Document Number: 88382 Revision: 18-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 188 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM5S10 thru SM5S36A Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) 10 RθJA 1 RθJC 0.1 0.01 0.01 0.1 1 10 100 t - Pulse Width (s) Fig. 5 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AB 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) 0.116 (3.0) 0.093 (2.4) 0.413 (10.5) 0.342 (8.7) 0.374 (9.5) 0.327 (8.3) Mounting Pad Layout 0.150 (3.8) 0.126 (3.2) 0.091 (2.3) 0.067 (1.7) 0.413 (10.5) 0.374 (9.5) 0.116 (3.0) 0.093 (2.4) 0.366 (9.3) 0.343 (8.7) 0.406 (10.3) 0.382 (9.7) 0.197 (5.0) 0.185 (4.7) 0.016 (0.4) MIN. Lead 2/Metal Heatsink Lead 1 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) 0.138 (3.5) 0.098 (2.5) 0.028 (0.7) 0.020 (0.5) 0.098 (2.5) 0.059 (1.5) www.vishay.com 189 For technical questions within your region, please contact one of the following: Document Number: 88382 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 18-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1