SM6S10AHE3-2D

SM6S10 thru SM6S36A Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification (varied by test condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-218AB PRIMARY CHARACTERISTICS VWM PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD IFSM TJ max. 10 V to 36 V 4600 W 3600 W 6W 600 A 175 °C TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Heatsink is anode per MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER with 10/1000 μs waveform Peak pulse power dissipation with 10/10 000 μs waveform Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Peak pulse current with 10/1000 μs waveform Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range Note (1) Non-repetitive current pulse at T = 25 °C A PPPM PD IPPM (1) SYMBOL VALUE 4600 UNIT W 3600 6.0 See next table 600 - 55 to + 175 W A A °C IFSM TJ, TSTG Document Number: 88384 Revision: 18-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 194 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM6S10 thru SM6S36A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR (V) MIN. SM6S10 SM6S10A SM6S11 SM6S11A SM6S12 SM6S12A SM6S13 SM6S13A SM6S14 SM6S14A SM6S15 SM6S15A SM6S16 SM6S16A SM6S17 SM6S17A SM6S18 SM6S18A SM6S20 SM6S20A SM6S22 SM6S22A SM6S24 SM6S24A SM6S26 SM6S26A SM6S28 SM6S28A SM6S30 SM6S30A SM6S33 SM6S33A SM6S36 SM6S36A 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 MAX. 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 44.9 40.6 48.9 44.2 TEST CURRENT IT (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 STAND-OFF VOLTAGE VWM (V) 10.0 10.0 11.0 11.0 12.0 12.0 13.0 13.0 14.0 14.0 15.0 15.0 16.0 16.0 17.0 17.0 18.0 18.0 20.0 20.0 22.0 22.0 24.0 24.0 26.0 26.0 28.0 28.0 30.0 30.0 33.0 33.0 36.0 36.0 MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) 15 15 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA) 250 250 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 MAXIMUM MAX. PEAK PULSE CURRENT CLAMPING VOLTAGE AT 10/1000 μs AT IPPM WAVEFORM (A) VC (V) 245 271 229 253 209 231 193 214 178 198 171 189 160 177 151 167 143 158 128 142 117 130 107 118 99 109 92 101 86 95 78 86 72 79 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.1 45.4 53.5 48.4 59.0 53.3 64.3 58.1 Note • For all types maximum VF = 1.9 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum www.vishay.com 195 For technical questions within your region, please contact one of the following: Document Number: 88384 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 18-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM6S10 thru SM6S36A Vishay General Semiconductor THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to case SYMBOL RJC VALUE 0.95 UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N SM6S10AHE3/2D (1) Note (1) AEC-Q101 qualified UNIT WEIGHT (g) 2.550 PREFERRED PACKAGE CODE 2D BASE QUANTITY 750 DELIVERY MODE 13" diameter plastic tape and reel, anode towards the sprocket hole RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 8.0 150 tr = 10 μs Peak Value IPPM Power Dissipation (W) 6.0 Input Peak Pulse Current (%) TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM 100 4.0 Half Value - IPP IPPM 2 50 2.0 td 0 0 50 100 150 200 0 0 1.0 2.0 3.0 4.0 Case Temperature (°C) t - Time (ms) Fig. 1 - Power Derating Curve Fig. 3 - Pulse Waveform 6000 10 000 4000 3000 2000 1000 0 25 50 75 100 125 150 175 1000 10 100 Case Temperature (°C) Reverse Surge Power (W) 5000 Load Dump Power (W) Pulse Width (ms) - ½ IPP Exponential Waveform Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) Fig. 4 - Reverse Power Capability Document Number: 88384 Revision: 18-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 196 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SM6S10 thru SM6S36A Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) 10 RθJA 1 RθJC 0.1 0.01 0.01 0.1 1 10 100 t - Pulse Width (s) Fig. 5 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AB 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) 0.116 (3.0) 0.093 (2.4) 0.413 (10.5) 0.342 (8.7) 0.374 (9.5) 0.327 (8.3) Mounting Pad Layout 0.150 (3.8) 0.126 (3.2) 0.091 (2.3) 0.067 (1.7) 0.413 (10.5) 0.374 (9.5) 0.116 (3.0) 0.093 (2.4) 0.366 (9.3) 0.343 (8.7) 0.406 (10.3) 0.382 (9.7) 0.197 (5.0) 0.185 (4.7) 0.016 (0.4) MIN. Lead 2/Metal Heatsink Lead 1 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) 0.138 (3.5) 0.098 (2.5) 0.028 (0.7) 0.020 (0.5) 0.098 (2.5) 0.059 (1.5) www.vishay.com 197 For technical questions within your region, please contact one of the following: Document Number: 88384 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 18-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1