SM6S17A

SM6S Series New Product Vishay Semiconductors formerly General Semiconductor Surface Mount Automotive Transient Voltage Suppressors DO-218AB 0.628(16.0) 0.592(15.0) 0.539(13.7) 0.524(13.3) 0.116(3.0) 0.093(2.4) ted* ten Pa 0.413(10.5) 0.374(9.5) Stand-off Voltage 10 to 36V Peak Pulse Power 4600W (10/1000µs) 3600W (10/10,000µs) Mounting Pad Layout 0.091(2.3) 0.067(1.7) 0.116(3.0) 0.093(2.4) 0.413(10.5) 0.342(8.7) 0.374(9.5) 0.327(8.3) 0.366(9.3) 0.343(8.7) 0.406(10.3) 0.382(9.7) Dimensions in inches and (millimeters) 0.366(9.3) 0.343(8.7) 0.150(3.8) 0.126(3.2) LEAD 1 0.197(5.0) 0.185(4.7) 0.138(3.5) 0.098(2.5) 0.606(15.4) 0.583(14.8) *Patent #’s: 0.016 (0.4) Min. 0.028(0.7) 0.020(0.5) 0.098(2.5) 0.059(1.5) 4,980,315 5,166,769 5,278,095 LEAD 2/METAL HEATSINK Features • Ideally suited for load dump protection • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High temperature stability due to unique oxide passivation and patented PAR® construction • Integrally molded heatsink provides a very low thermal resistance for maximum heat dissipation • Low leakage current at TJ = 175°C • High temperature soldering guaranteed: 260°C for 10 seconds at terminals • Meets ISO7637-2 surge spec. • Low forward voltage drop Mechanical Data Case: Molded plastic body, surface mount with heatsink integrally mounted in the encapsulation Terminals: Plated, solderable per MIL-STD-750, Method 2026 Polarity: Heatsink is anode Mounting Position: Any Weight: 0.091 oz., 2.58 g Packaging codes/options: 2D/750 per 13" Reel (16mm Tape), anode towards sprocket hole, 4.5K/box 2E/750 per 13" Reel (16mm Tape), cathode towards sprocket hole, 4.5K/box Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted) Parameter Peak pulse power dissipation with 10/1000µs waveform 10/10,000µs waveform Steady state power dissipation Peak pulse current with a 10/1000µs waveform (NOTE 1) Peak forward surge current, 8.3ms single half sine-wave Typical thermal resistance junction to case Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse derated above TA=25°C Symbol PPPM PD IPPM IFSM RΘJC TJ, TSTG Value 4600 3600 6.0 See Table 1 600 0.95 –55 to +175 Unit W W A A °C/W °C Document Number 88384 01-Aug-02 www.vishay.com 1 SM6S Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TC = 25°C unless otherwise noted) Device Type Breakdown Voltage V(BR) (V) Min. SM6S10 SM6S10A SM6S11 SM6S11A SM6S12 SM6S12A SM6S13 SM6S13A SM6S14 SM6S14A SM6S15 SM6S15A SM6S16 SM6S16A SM6S17 SM6S17A SM6S18 SM6S18A SM6S20 SM6S20A SM6S22 SM6S22A SM6S24 SM6S24A SM6S26 SM6S26A SM6S28 SM6S28A SM6S30 SM6S30A SM6S33 SM6S33A SM6S36 SM6S36A 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 Max. 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 44.9 40.6 48.9 44.2 Test Current IT (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Stand-off Voltage VWM (V) 10.0 10.0 11.0 11.0 12.0 12.0 13.0 13.0 14.0 14.0 15.0 15.0 16.0 16.0 17.0 17.0 18.0 18.0 20.0 20.0 22.0 22.0 24.0 24.0 26.0 26.0 28.0 28.0 30.0 30.0 33.0 33.0 36.0 36.0 Maximum Reverse Leakage at VWM ID (µA) 15 15 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Maximum Max. Peak Maximum Reverse Pulse Clamping Leakage Current Voltage at at VWM at 10/1000µs IPPM Tc=175oC Waveform VC ID(µA) 250 250 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 (A) 245 271 229 253 209 231 193 214 178 198 171 189 160 177 151 167 143 158 128 142 117 130 107 118 99 109 92 101 86 95 78 86 72 79 (V) 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.1 45.4 53.5 48.4 59.0 53.3 64.3 58.1 Note: For all types maximum VF = 1.9V at IF = 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum www.vishay.com 2 Document Number 88384 01-Aug-02 SM6S Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Power Derating Curve 8.0 6,000 Load Dump Power Characteristics (10ms Exponential Waveform) 5,000 Load Dump Power (W) 50 150 200 Power Dissipation (W) 6.0 4,000 3,000 2,000 4.0 2.0 1,000 0 0 100 0 25 50 75 100 125 150 175 Case Temperature (°C) Case Temperature (°C) Pulse Waveform 150 TA = 25°C Pulse width (td) is defined as the point where the peak current decays to 50% of IPP 10,000 Reverse Power Capability Input Peak Pulse Current % tr = 10µs 100 Peak Value IPP 50 Half Value – IPP 2 0 0 td 10 20 30 40 Reverse Surge Power (W) 1,000 10 100 Time, ms (t) Pulse Width (ms) – 1/2 IPP Exponential Waveform Typical Transient Thermal Impedance 100 Transient Thermal Impedance (°C/W) RΘJA 10 1 RΘJC 0.1 0.01 0.01 0.1 1 10 100 t – Pulse Width (sec.) Document Number 88384 01-Aug-02 www.vishay.com 3