SM8S

SM8S Series New Product Vishay Semiconductors formerly General Semiconductor Surface Mount Automotive Transient Voltage Suppressors DO-218AB 0.628(16.0) 0.592(15.0) 0.539(13.7) 0.524(13.3) 0.116(3.0) 0.093(2.4) 0.413(10.5) 0.342(8.7) 0.374(9.5) 0.327(8.3) * ted ten Pa ded ge n xte Ran Ee ltag Vo 0.413(10.5) 0.374(9.5) Stand-off Voltage 10 to 43V Peak Pulse Power 6600W (10/1000µs) 5200W (10/10,000µs) Mounting Pad Layout 0.091(2.3) 0.067(1.7) 0.116(3.0) 0.093(2.4) 0.366(9.3) 0.343(8.7) 0.406(10.3) 0.382(9.7) Dimensions in inches and (millimeters) LEAD 1 0.197(5.0) 0.185(4.7) 0.138(3.5) 0.098(2.5) 0.366(9.3) 0.343(8.7) 0.606(15.4) 0.583(14.8) 0.150(3.8) 0.126(3.2) 0.016 (0.4) Min. 0.028(0.7) 0.020(0.5) 0.098(2.5) 0.059(1.5) *Patent #’s: 4,980,315 5,166,769 5,278,095 LEAD 2/METAL HEATSINK Features • Ideally suited for load dump protection • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High temperature stability due to unique oxide passivation and patented PAR® construction • Integrally molded heatsink provides a very low thermal resistance for maximum heat dissipation • Low leakage current at TJ = 175°C • High temperature soldering guaranteed: 260°C for 10 seconds at terminals • Meets ISO7637-2 surge spec. • Low forward voltage drop Mechanical Data Case: Molded plastic body, surface mount with heatsink integrally mounted in the encapsulation Terminals: Plated, solderable per MIL-STD-750, Method 2026 Polarity: Heatsink is anode Mounting Position: Any Weight: 0.091 oz., 2.58 g Packaging codes/options: 2D/750 per 13" Reel (16mm Tape), anode towards sprocket hole, 4.5K/box 2E/750 per 13" Reel (16mm Tape), cathode towards sprocket hole, 4.5K/box Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted) Parameter Peak pulse power dissipation with 10/1000µs waveform 10/10,000µs waveform Steady state power dissipation Peak pulse current with a 10/1000µs waveform (1) Symbol PPPM PD IPPM IFSM RθJC TJ, TSTG Value 6600 5200 8.0 See Table 1 700 0.90 -55 to +175 Unit W W A A °C/W °C Peak forward surge current, 8.3ms single half sine-wave Typical thermal resistance junction to case Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse derated above TA=25°C Document Number 88387 04-Jun-04 www.vishay.com 1 SM8S Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TC = 25°C unless otherwise noted) Device Type Breakdown Voltage V(BR) (V) Min. SM8S10 SM8S10A SM8S11 SM8S11A SM8S12 SM8S12A SM8S13 SM8S13A SM8S14 SM8S14A SM8S15 SM8S15A SM8S16 SM8S16A SM8S17 SM8S17A SM8S18 SM8S18A SM8S20 SM8S20A SM8S22 SM8S22A SM8S24 SM8S24A SM8S26 SM8S26A SM8S28 SM8S28A SM8S30 SM8S30A SM8S33 SM8S33A SM8S36 SM8S36A SM8S40 SM8S40A SM8S43 SM8S43A 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 44.4 44.4 47.8 47.8 Max. 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 44.9 40.6 48.9 44.2 54.3 49.1 58.4 52.8 Test Current IT (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Stand-off Voltage VWM (V) 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 33 33 36 36 40 40 43 43 Maximum Reverse Leakage at VWM ID (µA) 15 15 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Maximum Max. Peak Maximum Reverse Pulse Clamping Leakage Current Voltage at at VWM at 10/1000µs IPPM Tc = 175oC Waveform VC ID(µA) 250 250 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 (A) 351 388 328 363 300 332 277 307 256 284 245 270 229 254 216 239 205 226 184 204 168 186 153 170 142 157 132 145 123 136 112 124 103 114 92.4 102 86.0 95.1 (V) 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.1 45.4 53.5 48.4 59.0 53.3 64.3 58.1 71.4 64.5 76.7 69.4 Note: For all types maximum VF = 1.8V at IF = 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum www.vishay.com 2 Document Number 88387 04-Jun-04 SM8S Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Power Derating Curve 8.0 6,000 Load Dump Power Characteristics (10ms Exponential Waveform) 5,000 Power Dissipation (W) 6.0 Load Dump Power (W) 4,000 3,000 2,000 4.0 2.0 1,000 0 0 50 100 150 200 0 25 50 75 100 125 150 175 Case Temperature (°C) Case Temperature (°C) Pulse Waveform 150 TA = 25°C Pulse width (td) is defined as the point where the peak current decays to 50% of IPP 10,000 Reverse Power Capability Input Peak Pulse Current % tr = 10µs 100 Peak Value IPP 50 Half Value – IPP 2 0 0 td 10 20 30 40 Reverse Surge Power (W) 1,000 10 100 Time, ms (t) Pulse Width (ms) – 1/2 IPP Exponential Waveform Typical Transient Thermal Impedance 100 Transient Thermal Impedance (°C/W) RΘJA 10 1 RΘJC 0.1 0.01 0.01 0.1 1 10 100 t – Pulse Width (sec.) Document Number 88387 04-Jun-04 www.vishay.com 3