SMBJ3V3

SMBJ3V3 New Product Vishay General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Unidirectional polarity only • Peak pulse power: 600 W (10/1000 µs) • Excellent clamping capability • Very fast response time • Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DO-214AA (SMBJ) MAJOR RATINGS AND CHARACTERISTICS V(BR) PPPM IFSM Tj max. 3.3 V 600 W 60 A 175 °C TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units specifically for protecting 3.3 V supplied sensitive equipment against transient overvoltages. MECHANICAL DATA Case: DO-214AA (SMBJ) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation (1,2) Peak pulse current with a 10/1000 μs waveform (see Fig. 1) Peak pulse current with a 8/20 waveform (see Fig. 1) Non repetitive peak forward surge current 8.3 ms single half Power dissipation on infinite heatsink, TL = 75 °C Operating junction and storage temperature range Note: (1) Non-repetitive current pulse, per Fig. 1 (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal sine-wave(2) SYMBOL PPPM IPPM IPPM IFSM PM(AV) TJ, TSTG VALUE 600 50 200 60 5 - 65 to + 175 UNIT W A A A W °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE V(BR) AT IT MIN V SMBJ3V3 KC 4.1 mA 1.0 MAXIMUM REVERSE LEAKAGE CURRENT IR AT VWM MAX µA 200 V 3.3 MAXIMUM CLAMPING VOLTAGE VC AT IPPM 10/1000 µs V 7.3 A 50 V 10.3 MAXIMUM CLAMPING VOLTAGE VC AT IPPM 8/20 µs A 200 (%/°C) - 5.3 TYPICAL TYPICAL TEMP. JUNCTION COEFFICIENT CAPACITANCE OF V(BR) CJ AT 0 V, 1 MHz pF 5200 www.vishay.com 1 DEVICE TYPE DEVICE MARKING CODE Document Number 88940 08-Sep-06 SMBJ3V3 Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to lead (1) SYMBOL RθJL RθJA VALUE 20 100 UNIT °C/W Typical thermal resistance, junction to ambient (2) Note: (1) Thermal resistance from junction to lead - Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal (2) Thermal resistance from junction to ambient - Mounted on the recommended P.C.B. pad layout ORDERING INFORMATION PREFERRED P/N SMBJ3V3-E3/52 SMBJ3V-E3/5B UNIT WEIGHT (g) 0.096 0.096 PREFERRED PACKAGE CODE 52 5B BASE QUANTITY 750 3200 DELIVERY MODE 7" Diameter Plastic Tape & Reel 13" Diameter Plastic Tape & Reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 10 tr = 10 µsec. tr = 8 µsec. Peak Value IPPM Tj = 25 °C Pulse Width (td) is defined as the point where the peak current decays to 50 % of IPPM IPPM - Peak Pulse Current, % IRSM 100 I R ( Tj)/IR (Tj = 2 5 °C) Half Value - IPP 2 IPPM 50 td = 1000 µs td = 20 µs 1 td 0 0 1.0 2.0 3.0 4.0 0.1 0 25 50 75 100 125 150 175 t - Time (ms) T j - Junction T emperat ure (°C) Figure 1. Pulse Waveform Figure 3. Relative Variation of Leakage Current vs. Junction Temperature 10 10 PPPM - Peak Pulse Power (kW) Clamping Voltage ( V) 8 1 6 10/1000 µs 8/20 µs 0.1 0.01 4 0.1 1 10 0.1 1 10 100 1000 td - Pulse Width (ms) Ipp (A) Figure 2. Peak Pulse Power Rating Curve Figure 4. Clamping Voltage vs. Peak Pulse Current (Tj initial = 25 °C) www.vishay.com 2 Document Number 88940 08-Sep-06 SMBJ3V3 Vishay General Semiconductor 5500 100 CJ - Junction Capacitance (pF) IF - Peak Forward Current (A) 5000 4500 4000 3500 3000 2500 2000 0 0.5 1 1.5 2 2.5 3 3.5 Tj = 175 °C 10 Tj = 25 °C 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Reverse Voltage (V) VF - Forward Voltage Drop (V) Figure 5. Typical Junction Capacitance Figure 7. Typical Peak Forward Voltage Drop vs. Peak Forward Current 100 Transient Thermal Impedance (°C/W) 10 1 0.01 0.1 1 10 100 1000 t - Pulse Duration (s) Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB-J-Bend) Cathode Band 0.085 MAX. (2.159 MAX.) 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) Mounting Pad Layout 0.086 MIN. (2.18 MIN.) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 MIN. (1.52 MIN.) 0.220 REF 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) 0.008 (0.2) 0 (0) Document Number 88940 08-Sep-06 www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1