SMF5V0A_08

SMF5V0A_08

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SMF5V0A_08 - Surface Mount ESD Protection Diodes - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
SMF5V0A_08 数据手册
SMF5V0A to SMF51A Vishay Semiconductors Surface Mount ESD Protection Diodes Features • • • • For surface mounted applications Low-profile package Optimized for LAN protection applications Ideal for ESD protection of data lines in accordance with IEC 61000-4-2 (IEC 801-2) Ideal for EFT protection of data lines in accordance with IEC 61000-4-4 (IEC 801-4) IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact) Low incremental surge resistance, excellent clamping capability 200 W peak pulse power capability with a 10/1000 µs waveform, repetition rate (duty cycle): 0.01 % Very fast response time High temperature soldering guaranteed: 260 °C/10 s at terminals AEC Q101 qualified Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 17249 • • • • Mechanical Data Case: JEDEC DO-219AB (SMF®) plastic case Terminals: Solder plated, solderable per MIL-STD-750, method 2026 Polarity: The band denotes the cathode which is positive with respect to the anode under normal TVS operation Mounting position: any Weight: approx. 15 mg • • • • • • Ordering Information/Packaging Codes SMF5V0A-GSxx GS08 = 3K per 7" reel (8 mm tape) GS18 = 10K per 13" reel (8 mm tape) Part number SMF5V0A-M-xx 08 = 3K per 7" reel (8 mm tape) 18 = 10K per 13" reel (8 mm tape) Environmental suffix -M- defines halogen-free Part number Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Peak pulse power dissipation Peak pulse current Peak forward surge current Test conditions 10/1000 µs waveform 8/20 µs waveform 1) 10/1000 µs waveform 1) 1) Symbol PPPM PPPM IPPM IFSM Value 200 1000 Next table 20 Unit W W A A 8.3 ms single half sine-wave Note 1) Non-repetitive current pulse and derated above TA = 25 °C Document Number 85811 Rev. 2.3, 27-Oct-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 1 SMF5V0A to SMF51A Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance 1) Test conditions Symbol RthJA Tstg, TJ Value 180 - 55 to + 150 Unit K/W °C Operating junction and storage temperature range Note 1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads ( ≥ 40 µm thick) Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified. VF = 3.5 V at IF = 12 A Breakdown voltage Partnumber Marking code 1) Test current Stand-off voltage Maximum reverse leakage at VWM ID µA 400 400 250 100 50 25 10 5.0 2.5 2.5 2.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum peak pulse surge current 2, 3) IPPM A 21.7 19.4 17.9 16.7 15.5 14.7 13.9 13.5 11.8 11.0 10.1 9.3 8.6 8.2 7.7 7.2 5.8 6.2 5.6 5.1 4.8 4.4 4.1 3.8 3.4 3.1 2.9 2.8 2.6 2.4 Maximum clamping voltage at IPPM VC V Junction capacitance Cj at VR = 0 V, f = 1 MHz pF typ. V(BR) V min. at IT mA 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VWM V 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 SMF5V0A SMF6V0A SMF6V5A SMF7V0A SMF7V5A SMF8V0A SMF8V5A SMF9V0A SMF10A SMF11A SMF12A SMF13A SMF14A SMF15A SMF16A SMF17A SMF18A SMF20A SMF22A SMF24A SMF26A SMF28A SMF30A SMF33A SMF36A SMF40A SMF43A SMF45A SMF48A SMF51A AE AG AK AM AP AR AT AV AX AZ BE BG BK BM BP BR BT BV BX BZ CE CG CK CM CP CR CT CV CX CZ 6.40 6.67 7.22 7.78 8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 1030 1010 850 750 730 670 660 620 570 460 440 420 370 350 340 310 305 207 265 240 225 210 205 190 180 165 160 155 150 145 Notes 1) Pulse test tp ≤ 5.0 ms 2) Surge current waveform 10/1000 µs 3) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 For technical support, please contact: ESD-Protection@vishay.com Document Number 85811 Rev. 2.3, 27-Oct-08 SMF5V0A to SMF51A Vishay Semiconductors Typical Characteristics Tamb = 25 °C unless otherwise specified 10 PPPM - Peak Pulse Power (kW) Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 1 0.1 0.1 µs 17250 1.0 µs 10 µs 100 µs 1.0 ms 10 ms td - Pulse Width (s) Figure 1. Peak Pulse Power Rating Peak Pulse Power (PPP) or Current (IPPM) Derating in Percentage, % 100 75 50 25 0 0 25 50 75 100 125 150 175 200 17251 TA - Ambient Temperature (°C) Figure 2. Pulse Derating Curve 150 IPPM - Peak Pulse Current, % IRSM tr = 10 µs Peak Value IPPM 100 TJ = 25 °C Pulse width (td) is defined as the point where the peak current decays to 50 % of I PPM Half Value - IPP 2 IPPM 50 10/1000 s waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0 17252 t - Time (ms) Figure 3. Pulse Waveform Document Number 85811 Rev. 2.3, 27-Oct-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 3 SMF5V0A to SMF51A Vishay Semiconductors Package Dimensions in millimeters (inches): 0.85 [0.033] 0.35 [0.014] 0.25 [0.010] 0.05 [0.002] 0.1 [0.004] 1.2 [0.047] 0.8 [0.031] 5 0 [0.000] Detail Z enlarged 1.9 [0.075] 1.7 [0.067] 2.9 [0.114] 2.7 [0.106] 3.9 [0.154] 3.5 [0.138] 1.08 [0.043] 0.88 [0.035] foot print recommendation: 1.3 [0.051] 1.3 [0.051] Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:S8-V-3915.01-001 (4) 17247 1.4 [0.055] 2.9 [0.114] www.vishay.com 4 5 For technical support, please contact: ESD-Protection@vishay.com Document Number 85811 Rev. 2.3, 27-Oct-08 SMF5V0A to SMF51A Vishay Semiconductors Blistertape Dimensions in millimeters: PS 18513 Document Number 85811 Rev. 2.3, 27-Oct-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 5 SMF5V0A to SMF51A Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 For technical support, please contact: ESD-Protection@vishay.com Document Number 85811 Rev. 2.3, 27-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
SMF5V0A_08
物料型号: - SMF5V0A-GSxx - SMF5V0A-M-xx

器件简介: 该器件为表面安装的ESD保护二极管,具有低轮廓封装,优化用于局域网保护应用,符合RoHS标准,无卤素,适用于IEC 61000-4-2 (ESD) 15 kV (空气) 8 kV (接触) 的ESD保护,以及IEC 61000-4-4 (EFT)的保护。

引脚分配: 文档中提到极性:带环的一端表示阴极,在正常TVS操作下相对于阳极为正。

参数特性: - 峰值脉冲功率耗散:200W(10/1000μs波形),1000W(8/20μs波形) - 峰值脉冲电流:根据10/1000μs波形,具体数值在下表中给出 - 峰值正向浪涌电流:20A(8.3ms单半正弦波)

功能详解: 器件具有很低的增量浪涌电阻,优秀的钳位能力,200W峰值脉冲功率能力,非常快的响应时间,并且保证在260°C下10秒的高温焊接。

应用信息: 适用于数据线路的ESD保护,符合IEC 801-2标准,以及数据线路的EFT保护,符合IEC 801-4标准。

封装信息: 封装为JEDEC DO-219AB (SMF^{\circledR})塑料封装,端子为镀锡,可按照MIL-STD-750, 方法2026进行焊接,重量约为15mg。
SMF5V0A_08 价格&库存

很抱歉,暂时无法提供与“SMF5V0A_08”相匹配的价格&库存,您可以联系我们找货

免费人工找货
SMF5V0A-E3-08
  •  国内价格
  • 5+0.88553
  • 50+0.72432
  • 600+0.5833
  • 1200+0.57455

库存:774