SMMB912DK

New Product SMMB912DK Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 4.5 V RDS(on) (Ω) at VGS = 2.5 V RDS(on) (Ω) at VGS = 1.8 V ID (A)a Configuration PowerPAK SC75-6L-Dual D1 D2 FEATURES 20 0.216 0.268 0.375 1.5 Dual 1 S1 2 G1 D1 D1 6 5 1.60 mm G2 4 S2 1.60 mm D2 S1 N-Channel MOSFET S2 N-Channel MOSFET 3 D2 G1 G2 • High Quality Manufacturing Process Using SMM Process Flow • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC • Find out more about Vishay’s Medical Products at: www.vishay.com/medical-mosfets APPLICATION EXAMPLES • Medical Implantable Applications Including - Drug Delivery Systems - Defibrillators - Pacemakers - Hearing Aids - Other Implantable Devices • Load Switch, PA Switch and Battery Switch for Portable Devices • DC/DC Converter Marking Code MBX Part # code XXX Lot Traceability and Date code ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK SC-75 SMMB912DK-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage TC = 25 °Ca Continuous Drain Current (TJ = 150 °C) TC = 70 °Ca TA = 25 °Cb, c TA = 70 °Cb, c Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °Ca TA = 25 °Cb, c TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °Cb, c TA = 70 °Cb, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg PD IDM IS ID SYMBOL VDS VGS LIMIT 20 ±8 1.5 1.5 1.5 1.4 5 1.5 0.9 3.1 2.0 1.1 0.7 - 55 to + 150 260 °C W A UNIT V Document Number: 65459 S09-2018-Rev. A, 05-Oct-09 www.vishay.com 1 New Product SMMB912DK Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambientb, f t≤5s SYMBOL RthJA TYPICAL 90 MAXIMUM 115 UNIT °C/W 32 40 Junction-to-Case (Drain) Steady State RthJC Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 125 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Body Diode Characteristics Continuous Source-Drain Diode Currentc Pulse Diode Forward Current Body Diode Voltage IS ISM VSD IS = 1.4 A, VGS = 0 V TC = 25 °C 0.7 1.5 5 1.2 A V Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 10 V, RL = 7.1 Ω ID ≅ 1.4 A, VGEN = 8 V, Rg = 1 Ω VDD = 10 V, RL = 7.1 Ω ID ≅ 1.4 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz VGS = 8 V VGS = 4.5 V VDS = 10 V, ID = 1.8 A VDS = 10 V, ID = 1.8 A VGS = 0 V VDS = 10 V, f = 1 MHz 0.5 95 24 11 2 1.2 0.3 0.15 2.5 5 10 24 8 2 9 8 7 3 1.8 5 10 20 36 16 4 18 16 14 ns Ω nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 8 V VGS = 0 V VGS = 0 V VGS = 4.5 V VGS = 4.5 V VGS = 2.5 V VGS = 1.8 V VDS = 20 V VDS = 20 V, TJ = 55 °C VDS ≥ 5 V ID = 1.8 A ID = 1.6 A ID = 0.3 A 20 0.4 5 22 -2 0.180 0.223 0.300 3 1 ± 100 1 10 0.216 0.268 0.375 S Ω V mV/°C V nA µA A SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS = 10 V, ID = 1.8 A www.vishay.com 2 Document Number: 65459 S09-2018-Rev. A, 05-Oct-09 New Product SMMB912DK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Source-Drain Body Diode Characteristics Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time trr Qrr ta tb IF = 1.4 A, dI/dt = 100 A/µs, TJ = 25 °C 9 3 6 3 18 6 ns nC ns SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 5 VGS = 5 V thru 2.5 V 4 I D - Drain Current (A) VGS = 2 V 3 I D - Drain Current (A) 0.8 1.0 0.6 TC = 25 °C 0.4 2 VGS = 1.5 V 1 VGS = 1 V 0 0 1 2 3 4 5 0.2 TC = 125 °C TC = - 55 °C 0.0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.5 VGS = 1.8 V R DS(on) - On-Resistance (Ω) 0.4 C - Capacitance (pF) 120 150 Transfer Characteristics Ciss 90 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 60 30 Crss 0 4 8 Coss 0.0 0 1 2 3 4 5 0 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Document Number: 65459 S09-2018-Rev. A, 05-Oct-09 www.vishay.com 3 New Product SMMB912DK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 8 ID = 1.8 A R DS(on) - On-Resistance 6 VDS = 10 V 4 VDS = 16 V 1.5 VGS = 2.5 V (Normalized) 1.8 ID = 1.8 A VGS - Gate-to-Source Voltage (V) 1.2 VGS = 4.5 V 0.9 2 0 0.0 0.4 0.8 1.2 1.6 2.0 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 10 0.4 On-Resistance vs. Junction Temperature ID = 1.8 A R DS(on) - On-Resistance (Ω) 0.3 TJ = 125 °C I S - Source Current (A) 1 TJ = 150 °C 0.2 TJ = 25 °C 0.1 TJ = 25 °C 0.1 0 0.3 0.6 0.9 1.2 0.0 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage 0.85 8 On-Resistance vs. Gate-to-Source Voltage 0.75 6 VGS(th) (V) 0.65 ID = 250 µA 0.55 Power (W) 4 0.45 2 0.35 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 Single Pulse Power, Junction-to-Ambient Document Number: 65459 S09-2018-Rev. A, 05-Oct-09 New Product SMMB912DK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 Limited by RDS(on)* 4 I D - Drain Current (A) 100 µs 1 1 ms 10 ms 100 ms 1 s, 10 s DC BVDSS Limited 0.01 0.1 I D - Drain Current (A) 3 2 Package Limited 0.1 TA = 25 °C Single Pulse 1 1 10 100 0 0 25 50 75 100 125 150 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TC - Case Temperature (°C) Safe Operating Area, Junction-to-Ambient 4 1.5 Current Derating* 1.2 3 Power (W) Power (W) 0.9 2 0.6 1 0.3 0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Case Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65459 S09-2018-Rev. A, 05-Oct-09 www.vishay.com 5 New Product SMMB912DK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 Notes: 0.1 0.02 Single Pulse 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 0.1 10-4 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65459. www.vishay.com 6 Document Number: 65459 S09-2018-Rev. A, 05-Oct-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1