SS12P2L

SS12P2L

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SS12P2L - High Current Density Surface Mount Schottky Barrier Rectifiers - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
SS12P2L 数据手册
New Product SS12P2L & SS12P3L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM Series K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Halogen-free MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94V-0 flammability rating. Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC-Q101 qualified) Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Base P/NHM3 - halogen-free and RoHS compliant, high reliability/automotive grade (AEC-Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 and M3 suffix meets JESD 201 class 1A whisker test, HE3 and HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 12 A TJ max. 12 A 20 V, 30 V 280 A 20 mJ 0.38 V 150 °C TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2 A, TJ = 25 °C Operating junction and storage temperature range VRRM IF(AV) IFSM EAS TJ, TSTG SYMBOL SS12P2L S122 20 12 280 20 - 55 to + 150 SS12P3L S123 30 V A A mJ °C UNIT Document Number: 89002 Revision: 30-Jul-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product SS12P2L & SS12P3L Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 6 A IF = 1 2 A IF = 6 A IF = 1 2 A V R = 30 V 4.0 V, 1 MHz TA = 25 °C VF TA = 125 °C TA = 25 °C TA = 125 °C IR CJ SYMBOL TYP. 0.41 0.48 0.30 0.38 150 59 930 MAX. 0.56 V 0.46 1000 120 µA mA pF UNIT Maximum instantaneous forward voltage (1) Maximum reverse current (2) Typical junction capacitance Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance Note: (1) Units mounted on recommended P.C.B. 1 oz. pad layout SYMBOL RθJA RθJL (1) SS12P2L 60 3 SS12P3L UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N SS12P3L-E3/86A SS12P3L-E3/87A SS12P3LHE3/86A (1) SS12P3LHE3/87A (1) SS12P3L-M3/86A SS12P3L-M3/87A SS12P3LHM3/86A (1) SS12P3LHM3/87A (1) Note: (1) High reliability/automotive grade (AEC-Q101 qualified) UNIT WEIGHT (g) 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 PREFERRED PACKAGE CODE 86A 87A 86A 87A 86A 87A 86A 87A BASE QUANTITY 1500 6500 1500 6500 1500 6500 1500 6500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89002 Revision: 30-Jul-08 New Product SS12P2L & SS12P3L Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 14 1000 Instantaneous Reverse Current (mA) Resistive or Inductive Load Average Forward Current (A) 12 10 8 6 4 2 0 100 TL measured at the Cathode Band Terminal 100 TA = 150 °C 10 TA = 125 °C 1 0.1 TA = 25 °C 0.01 0.001 110 120 130 140 150 10 20 30 40 50 60 70 80 90 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Maximum Forward Current Derating Curve Figure 4. Typical Reverse Leakage Characteristics 7 D = 0.8 6 D = 0.5 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 5 4 3 2 1 0 0 2 4 6 8 10 12 14 D = 0.1 T D = 0.2 D = 1.0 Junction Capacitance (pF) D = 0.3 Average Power Loss (W) 1000 D = tp/T tp 100 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Figure 2. Forward Power Loss Characteristics Figure 5. Typical Junction Capacitance 100 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) TA = 150 °C 10 TA = 125 °C Junction to Ambient 1 TA = 25 °C 10 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Transient Thermal Impedance Document Number: 89002 Revision: 30-Jul-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product SS12P2L & SS12P3L Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) K 0.016 (0.40) 0.006 (0.15) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.026 (0.65) NOM. 2 1 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.047 (1.20) 0.039 (1.00) Mounting Pad Layout 0.189 MIN. (4.80) 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.268 (6.80) 0.186 MIN. (4.72) 0.049 (1.24) 0.037 (0.94) 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.050 MIN. (1.27) 0.055 MIN. (1.40) Conform to JEDEC TO-277A www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89002 Revision: 30-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
SS12P2L
1. 物料型号: - SS12P2L - SS12P3L

2. 器件简介: - 这些是高电流密度表面贴装肖特基势垒整流器,属于eSMP™系列,符合RoHS标准,具有很低的轮廓,典型高度为1.1毫米,适合自动放置,带有用于过压保护的保护环,低正向电压降,低功耗,高效率,低热阻,满足MSL等级1(根据J-STD-020,LF最大峰值为260°C),并且符合RoHS 2002/95/EC和WEEE 2002/96/EC标准,无卤素。

3. 引脚分配: - 封装为TO-277A (SMPC),引脚为镀锡的,可焊性符合J-STD-002和JESD22-B102标准。

4. 参数特性: - 最大重复峰值反向电压(VRRM):SS12P2L为20V,SS12P3L为30V。 - 最大平均正向整流电流(F(AV)):12A。 - 峰值正向浪涌电流(IFSM):280A。 - 非重复性雪崩能量(EAS):SS12P2L为20mJ。 - 工作结和存储温度范围(TJTSTG):-55至+150°C。

5. 功能详解: - 器件具有很低的正向电压降和低功耗,高效率,低热阻,满足MSL等级1,并且符合RoHS和WEEE标准。

6. 应用信息: - 用于低电压高频逆变器、自由轮流通道、直流-直流转换器和极性保护应用。

7. 封装信息: - 封装为TO-277A (SMPC),模塑料符合UL 94V-0可燃性等级。 - 底座型号包括E3(商业级,符合RoHS)、HE3(高可靠性/汽车级,符合AEC-Q101)、M3(无卤素,商业级,符合RoHS)和HM3(无卤素,高可靠性/汽车级,符合AEC-Q101)。 - 订购信息包括不同的包装代码、基础数量和交货模式,例如7英寸和13英寸直径塑料带和卷。
SS12P2L 价格&库存

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