SS1H9

SS1H9 & SS1H10 Vishay General Semiconductor High-Voltage Surface Mount Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • Low leakage current • High surge capability DO-214AC (SMA) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF IR TJ max. 1.0 A 90 V to 100 V 50 A 0.62 V 1.0 µA 175 °C TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz Storage temperature range Maximum operating temperature VRRM VRWM VDC IF(AV) IFSM IRRM TSTG TJ SYMBOL SS1H9 S9 90 90 90 1.0 50 1.0 - 65 to + 175 175 SS1H10 S10 100 100 100 V V V A A A °C °C UNIT Document Number: 88747 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 SS1H9 & SS1H10 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.0 A IF = 1.0 A IF = 2.0 A IF = 2.0 A TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C SYMBOL SS1H9 0.77 0.62 0.86 0.70 1.0 0.5 SS1H10 UNIT Maximum instantaneous forward voltage (1) VF V Maximum reverse current at rated VR (2) Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms IR µA mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance (1) Note: (1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas SYMBOL RθJA RθJL SS1H9 88 30 SS1H10 UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N SS1H10-E3/61T SS1H10-E3/5AT SS1H10HE3/61T(1) SS1H10HE3/5AT(1) UNIT WEIGHT (g) 0.064 0.064 0.064 0.064 PREFERRED PACKAGE CODE 61T 5AT 61T 5AT BASE QUANTITY 1800 7500 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.2 60 Average Forward Current (A) Average Forward Current (A) 1.0 50 0.8 40 0.6 30 0.4 20 0.2 10 0 25 50 75 100 125 150 175 0 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88747 Revision: 19-May-08 SS1H9 & SS1H10 Vishay General Semiconductor 100 1000 TJ = 175 °C Instantaneous Forward Current (A) 10 TJ = 150 °C 1 TJ = 125 °C Junction Capacitance (pF) 100 0.1 TJ = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 10 000 TJ = 175 °C TJ = 150 °C 100 TJ = 125 °C 100 1000 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 1 TJ = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 100 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.074 (1.88) MAX. 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 88747 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1