SS29 & SS210
Vishay General Semiconductor
High Voltage Surface Mount Schottky Rectifier
FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability
DO-214AA (SMB)
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AA (SMB) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF TJ max. 1.5 A 90 V, 100 V 75 A 0.71 V 150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse surge current at tp = 2 µs, 1 kHz Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM VRMS VDC IF(AV) IFSM IRRM dV/dt TJ, TSTG SYMBOL SS29 S9 90 63 90 1.5 75 1.0 10 000 - 55 to + 150 SS210 S10 100 70 100 V V V A A A V/µs °C UNIT
Document Number: 88749 Revision: 07-May-08
For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
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SS29 & SS210
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS IF = 0.1 A IF = 1.0 A IF = 3.0 A IF = 1.5 A IF = 3.0 A TA = 25 °C TA = 25 °C TA = 25 °C TA = 100 °C TA = 100 °C TA = 25 °C TA = 100 °C SYMBOL SS29 0.43 0.75 0.95 0.71 0.85 30 5 SS210 UNIT
Maximum instantaneous forward voltage (1)
VF
V
Maximum DC reverse current at rated VR (1) Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle
IR
µA mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum thermal resistance (1) Note: (1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas SYMBOL RθJA RθJL SS29 85 25 SS210 UNIT °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N SS210-E3/52T SS210-E3/5BT SS210HE3/52T (1) SS210HE3/5BT (1) Note: (1) Automotive grade AEC Q101 qualified UNIT WEIGHT (g) 0.096 0.096 0.096 0.096 PREFERRED PACKAGE CODE 52T 5BT 52T 5BT BASE QUANTITY 750 3200 750 3200 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
2.0 Resistive or Inductive Load 2.5 D = 0.8
Average Forward Current (A)
1.5
Average Power Loss (W)
2.0 D = 0.3 1.5 D = 0.2 D = 0.1 1.0
D = 0.5
D = 1.0
1.0
T 0.5 D = tp/T 0 tp 3.2 3.6
0.5
P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas
0 0 25 50 75 100 125 150
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Lead Temperature (°C)
Average Forward Current (A)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88749 Revision: 07-May-08
SS29 & SS210
Vishay General Semiconductor
100
10 000
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)
TJ = 150 °C 1000 TJ = 125 °C
75
100
50
10 TJ = 25 °C
25
1
0 1 10 100
0.1 10 20 30 40 50 60 70 80 90 100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Reverse Leakage Characteristics
100
1000 TJ = 150 °C TJ = 125 °C
Instantaneous Forward Current (A)
10
Junction Capacitance (pF)
100
TJ = 25 °C 1
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10 0.1 1 10 100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 4. Typical Instantaneous Forward Characteristics
Figure 6. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB) Cathode Band Mounting Pad Layout
0.085 (2.159) MAX.
0.086 (2.20) 0.077 (1.95)
0.155 (3.94) 0.130 (3.30)
0.086 (2.18) MIN.
0.180 (4.57) 0.160 (4.06)
0.012 (0.305) 0.006 (0.152)
0.096 (2.44) 0.084 (2.13)
0.060 (1.52) MIN. 0.220 REF.
0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21)
0.060 (1.52) 0.030 (0.76)
Document Number: 88749 Revision: 07-May-08
For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
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Vishay
Disclaimer
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Document Number: 91000 Revision: 11-Mar-11
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