SS8P6CHM3-86A

New Product SS8P5C, SS8P6C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier eSMP ® Series K FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified J-STD-020, 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 4 A TJ max. 2 x 4.0 A 50 V, 60 V 120 A 20 mJ 0.56 V 150 °C Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters and polarity protection application. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode Operating junction and storage temperature range total device per diode IF(AV) IFSM EAS TJ, TSTG VRRM SYMBOL SS8P5C S85C 50 8.0 4.0 120 20 - 55 to + 150 A mJ °C SS8P6C S86C 60 V A UNIT Document Number: 89028 Revision: 17-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS8P5C, SS8P6C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.0 A Instantaneous forward voltage per diode IF = 4.0 A IF = 2.0 A IF = 4.0 A Reverse current per diode Typical junction capacitance per diode Rated VR 4.0 V, 1 MHz TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL TYP. 0.55 0.65 0.48 0.56 IR (2) CJ 2.5 1.6 160 MAX. 0.70 V 0.60 50 10 μA mA pF UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER Typical thermal resistance per diode SYMBOL RJA RJL Note (1) Units mounted on recommended PCB 1 oz. pad layout (1) SS8P5C 60 SS8P6C UNIT °C/W 3 ORDERING INFORMATION (Example) PREFERRED P/N SS8P6C-M3/86A SS8P6C-M3/87A SS8P6CHM3/86A SS8P6CHM3/87A (1) (1) (1) UNIT WEIGHT (g) 0.10 0.10 0.10 0.10 PACKAGE CODE 86A 87A 86A 87A BASE QUANTITY 1500 6500 1500 6500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note Automotive grade www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89028 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 17-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS8P5C, SS8P6C Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 10 10 000 Average Forward Rectified Current (A) Instantaneous Reverse Current (µA) Resistive or Inductive Load 8 TA = 150 °C 1000 TA = 125 °C 100 6 4 10 2 TL measured at the Cathode Band Terminal 1 TA = 25 °C 0 0 25 50 75 100 125 150 175 0.1 10 20 30 40 50 60 70 80 90 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Per Diode 3.0 D = 0.3 D = 0.5 D = 0.8 D = 0.2 D = 0.1 D = 1.0 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 2.0 Junction Capacitance (pF) Average Power Loss (W) 2.5 1.5 T 100 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 D = tp/T 3.0 3.5 tp 10 4.0 4.5 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 TA = 150 °C 10 TA = 125 °C 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 1 TA = 25 °C 0.1 10 Junction to Ambient 1 0.01 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Document Number: 89028 Revision: 17-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS8P5C, SS8P6C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) K 0.016 (0.40) 0.006 (0.15) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.047 (1.20) 0.039 (1.00) Mounting Pad Layout 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.268 (6.80) 0.186 (4.72) MIN. 0.049 (1.24) 0.037 (0.94) 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) Conform to JEDEC TO-277A 0.050 (1.27) MIN. 0.041 (1.04) 0.055 (1.40) MIN. www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89028 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 17-May-11 This document is subject to change without notice. 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