SS8PH10

SS8PH10

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SS8PH10 - High Current Density Surface Mount High-Voltage Schottky Rectifier - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
SS8PH10 数据手册
New Product SS8PH9 & SS8PH10 Vishay General Semiconductor High Current Density Surface Mount High-Voltage Schottky Rectifier eSMP K TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum 1 • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Halogen-free MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94V-0 flammability rating. Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC-Q101 qualified) Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Base P/NHM3 - halogen-free and RoHS compliant, high reliability/automotive grade (AEC-Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 and M3 suffix meets JESD 201 class 1A whisker test, HE3 and HM3 suffix meets JESD 201 class 2 whisker test 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 8 A IR TJ max. 8.0 A 90 V, 100 V 150 A 20 mJ 0.720 V 0.18 µA 175 °C TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2 A, TJ = 25 °C Operating junction and storage temperature range VRRM IF(AV) IFSM EAS TJ, TSTG SYMBOL SS8PH9 8H9 90 8.0 150 20 - 55 to + 175 SS8PH10 8H10 100 V A A mJ °C UNIT Document Number: 88989 Revision: 30-Jul-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product SS8PH9 & SS8PH10 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 4.0 A IF = 8.0 A IF = 4.0 A IF = 8.0 A rated VR 4.0 V, 1 MHz TA = 25 °C VF TA = 125 °C TA = 25 °C TA = 125 °C IR CJ SYMBOL TYP. 0.769 0.850 0.634 0.720 0.18 110 140 MAX. 0.90 V 0.76 2.0 300 µA pF UNIT Instantaneous forward voltage (1) Reverse current (2) Typical junction capacitance Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance Note: (1) Units mounted on recommended P.C.B. 1 oz. pad layout SYMBOL RθJA RθJL (1) SS8PH9 65 3 SS8PH10 UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N SS8PH10-E3/86A SS8PH10-E3/87A SS8PH10HE3/86A (1) SS8PH10HE3/87A (1) SS8PH10-M3/86A SS8PH10-M3/87A SS8PH10HM3/86A (1) SS8PH10HM3/87A (1) Note: (1) High reliability/automotive grade (AEC-Q101 qualified) UNIT WEIGHT (g) 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 PREFERRED PACKAGE CODE 86A 87A 86A 87A 86A 87A 86A 87A BASE QUANTITY 1500 6500 1500 6500 1500 6500 1500 6500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88989 Revision: 30-Jul-08 New Product SS8PH9 & SS8PH10 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 9 Resistive or Inductive Load 10 000 Instantaneous Reverse Current (µA) Average Forward Current (A) 1000 100 10 1 0.1 TA = 175 °C TA = 150 °C 8 7 6 5 4 3 2 1 0 100 110 120 130 140 150 160 170 180 TL measured at the Cathode Band Terminal TA = 125 °C TA = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Maximum Forward Current Derating Curve Figure 4. Typical Reverse Characteristics 8.0 D = 0.5 7.0 D = 0.3 D = 0.2 6.0 D = 0.1 5.0 4.0 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 D = tp/T tp D = 1.0 T D = 0.8 1000 Junction Capacitance (pF) Average Power Loss (W) 100 10 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Figure 2. Forward Power Loss Characteristics Figure 5. Typical Junction Capacitance 100 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) TA = 175 °C 10 TA = 150 °C Junction to Ambient TA = 125 °C 1 10 0.1 TA = 25 °C 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Transient Thermal Impedance Document Number: 88989 Revision: 30-Jul-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product SS8PH9 & SS8PH10 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) K 0.016 (0.40) 0.006 (0.15) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.026 (0.65) NOM. 2 1 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.047 (1.20) 0.039 (1.00) Mounting Pad Layout 0.189 MIN. (4.80) 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.268 (6.80) 0.186 MIN. (4.72) 0.049 (1.24) 0.037 (0.94) 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.050 MIN. (1.27) 0.055 MIN. (1.40) Conform to JEDEC TO-277A www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88989 Revision: 30-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
SS8PH10
物料型号: - SS8PH9 和 SS8PH10,这是Vishay General Semiconductor生产的高电流密度表面贴装高压肖特基整流器的型号。

器件简介: - eSMP™系列的肖特基整流器具有非常低的轮廓,典型高度为1.1毫米,适合自动放置,带有用于过电压保护的防护环,并且符合RoHS,具有高阻隔技术,结温$T_{J}=175^{\\circ} C$,低漏电流,并且符合MSL等级1,根据J-STD-020,最大峰值260°C。

引脚分配: - 引脚为钝化锡镀层引线,符合J-STD-002和JESD22-B102标准,E3和M3后缀符合JESD 201 class 1A须根测试,HE3和HM3后缀符合JESD 201 class 2须根测试。

参数特性: - 主要参数包括8.0A、90V/100V、150A、20mJ、0.720V、0.18A和175°C。

功能详解: - 这些器件用于高频整流器的开关模式电源、自由轮流通二极管、DC-DC转换器或极性保护应用。

应用信息: - 适用于高频整流器的开关模式电源、自由轮流通二极管、DC-DC转换器或极性保护应用。

封装信息: - 封装形式为TO-277A (SMPC),模塑料符合UL 94V-0可燃性等级。不同等级的产品有不同的基础部件编号,包括RoHS合规的商业级、高可靠性/汽车级(AEC-Q101合格)以及无卤素和RoHS合规的商业级等。
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