SUB60N06-18

SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.018 ID (A) 60 TO-220AB D TO-263 DRAIN connected to TAB G GDS Top View SUP60N06-18 G DS S Top View SUB60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Drain Current Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 "20 60 39 Unit V A 120 60 180 120b W 3.7 –55 to 175 _C mJ Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction to Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70290 S–57253—Rev. D, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 RthJA hJA RthJC Symbol Limit 40 62.5 1.25 Unit _C/W 2-1 SUP/SUB60N06-18 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 1 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 60 0.014 0.024 0.031 49 0.018 0.030 0.036 S W 60 V 2.0 4.0 "100 1 50 150 A mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.5 W , ID ] 60 A, VGEN = 10 V, RG = 2.5 W 30 V, 10 V 60 VDS = 30 V VGS = 10 V, ID = 60 A VGS = 0 V, VDS = 25 V f = 1 MH 25 V, MHz 2000 400 115 39 12 10 12 11 25 15 30 30 ns 50 30 60 nC C pF F Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr 25_C)b 60 A 120 IF = 60 A, VGS = 0 V 60 IF = 60 A, di/dt = 100 A/ms 60 A di/d 6.0 0.4 1.6 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70290 S–57253—Rev. D, 24-Feb-98 SUP/SUB60N06-18 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10, 9, 8, 7 V 75 I D – Drain Current (A) 6V 50 I D – Drain Current (A) 60 100 Transfer Characteristics 80 40 TC = 125_C 20 25_C –55_C 0 25 5V 4V 0 0 2 4 6 8 10 0 2 4 6 8 10 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Transconductance 70 60 g fs – Transconductance (S) 50 125_C 40 30 20 10 0 0 10 20 30 40 50 TC = –55_C r DS(on) – On-Resistance ( Ω ) 25_C 0.016 0.020 On-Resistance vs. Drain Current VGS = 10 V 0.012 0.008 0.004 0 0 20 40 60 80 100 VGS – Gate-to-Source Voltage (V) ID – Drain Current (A) Capacitance 3000 10 Gate Charge V GS – Gate-to-Source Voltage (V) 2500 Ciss C – Capacitance (pF) 2000 8 VGS = 10 V ID = 60 A 6 1500 4 1000 Coss 500 Crss 2 0 0 10 20 30 40 0 0 10 20 30 40 VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC) Document Number: 70290 S–57253—Rev. D, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB60N06-18 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.4 VGS = 10 V ID = 30 A I S – Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 2.0 r DS(on) – On-Resistance ( Ω ) (Normalized) 1.6 1.2 0.8 0.4 0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 Limited by rDS(on) I D – Drain Current (A) 10 1 ms 100 ms 200 100 10 ms Safe Operating Area I D – Drain Current (A) 10 ms 1 TC = 25_C Single Pulse 100 ms dc 0.1 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 Single Pulse 0.05 0.01 10–5 10–4 0.02 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 70290 S–57253—Rev. D, 24-Feb-98 2-4