SUB75N03-04

SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.004 ID (A) 75a TO-220AB TO-263 D G DRAIN connected to TAB DRAIN connected to TAB G DS GDS Top View SUP75N03-04 Top View SUB75N03-04 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy Repetitive Avalanche Energyb Maximum Power Dissipation L = 0.1 mH L = 0.05 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C Symbol VGS ID IDM IS IAR EAS EAR PD TJ, Tstg TO-220AB TL Limit "20 75a 75a 250 75 75 280 140 187c 3.7 –55 to 175 300 Unit V A mJ W Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70745 S-04137—Rev. E, 18-Jun-01 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 SUP/SUB75N03-04 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 75 A Drain-Source On-State Resistanceb VGS = 4.5 V, ID = 75 A rDS(on) VGS = 10 V, ID = 25 A, TJ = 125_C VGS = 10 V, ID = 25 A, TJ = 175_C Forward Transconductanceb gfs VDS = 15 V, ID = 25 A 30 120 0.0034 0.005 0.004 0.006 0.006 0.008 S W 30 V 1 3 "500 1 50 200 A mA nA Symbol Test Condition Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.6 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 75 A VGS = 0 V, VDS = 25 V, f = 1 MHz 10742 1811 775 200 40 40 20 40 190 95 ns 40 250 nC pF Source-Drain Diode Ratings and Characteristics Diode Forward Voltageb Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge VSD trr IRM(rec) Qrr IF = 50 A, di/dt = 100 A/ms IF = 75 A, VGS = 0 V 70 2.8 0.1 1.3 120 6 0.36 V ns A mC Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2-2 Document Number: 70745 S-04137—Rev. E, 18-Jun-01 SUP/SUB75N03-04 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10, 9, 8, 7, 6, 5 V 200 I D – Drain Current (A) 4V 150 150 I D – Drain Current (A) 200 Transfer Characteristics 100 100 50 TC = 125_C 25_C –55_C 50 3V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Transconductance 175 150 TC = –55_C g fs – Transconductance (S) 125 100 75 50 25 0 0 20 40 60 80 100 0.008 On-Resistance vs. Drain Current 25_C r DS(on) – On-Resistance ( Ω ) 125_C 0.006 VGS = 4.5 V 0.004 VGS = 10 V 0.002 0.000 0 20 40 60 80 100 120 VGS – Gate-to-Source Voltage (V) ID – Drain Current (A) Capacitance 14000 12000 C – Capacitance (pF) 10000 8000 6000 4000 Coss 2000 0 0 6 12 18 24 30 Crss Ciss 20 Gate Charge V GS – Gate-to-Source Voltage (V) 16 VDS = 30 V ID = 75 A 12 8 4 0 0 100 200 300 400 VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC) Document Number: 70745 S-04137—Rev. E, 18-Jun-01 www.vishay.com 2-3 SUP/SUB75N03-04 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) – On-Resistance ( Ω ) (Normalized) 2.0 I S – Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.5 1.0 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 Safe Operating Area 80 I D – Drain Current (A) I D – Drain Current (A) 100 Limited by rDS(on) 100 ms 60 1 ms 40 10 10 ms TC = 25_C Single Pulse 100 ms dc 20 0 0 25 50 75 100 125 150 175 TC – Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 0.1 1.0 10.0 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 70745 S-04137—Rev. E, 18-Jun-01 2-4