SUP/SUB75N06-07L
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60 0.0085 @ VGS = 4.5 V
rDS(on) (W)
0.0075 @ VGS = 10 V
ID (A)
75a
TO-220AB
D
TO-263
G DRAIN connected to TAB G GDS Top View SUP75N06-07L DS S N-Channel MOSFET
Top View SUB75N06-07L
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IAR EAR
Symbol
VGS
Limit
"20 75a 55 240 60 280 250c 3.7 –55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70776 S-05111—Rev. F, 10-Dec-00 www.vishay.com Free Air (TO-220AB) RthJA RthJC
Symbol
Limit
40 62.5 0.6
Unit
_C/W
2-1
SUP/SUB75N06-07L
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0061 0.0071 0.0075 0.0085 0.012 0.015 S W 60 V 1.0 3.0 "100 1 50 250 A mA nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.47 W ID ^ 75 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 75 A VGS = 0 V, VDS = 25 V, f = 1 MHz 6300 920 350 75 18 27 14 15 150 50 40 40 300 100 ns 120 nC pF
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/ms IF = 75 A , VGS = 0 V 1.0 67 6 0.2 75 A 240 1.3 120 8 0.48 V ns A mC
Notes a. Pulse test: pulse width v 300 msec, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
www.vishay.com
2-2
Document Number: 70776 S-05111—Rev. F, 10-Dec-00
SUP/SUB75N06-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250 VGS = 10 thru 5 V 150 I D – Drain Current (A) 150 I D – Drain Current (A) 4V 200
Transfer Characteristics
200
100
100
50
TC = 125_C 25_C
50
3V
–55_C 3 4 5
0 0 2 4 6 8 10
0 0 1 2
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
Transconductance
180 –55_C 25_C 0.010
On-Resistance vs. Drain Current
150 g fs – Transconductance (S)
0.008 r DS(on) – On-Resistance ( Ω )
VGS = 4.5 V
120 125_C 90
0.006
VGS = 10 V
0.004
60
30
0.002
0 0 20 40 60 80 100
0.000 0 20 40 60 80 100
VGS – Gate-to-Source Voltage (V)
ID – Drain Current (A)
Capacitance
10000 20
Gate Charge
8000 C – Capacitance (pF) Ciss 6000
V GS – Gate-to-Source Voltage (V)
16
VDS = 30 V ID = 75 A
12
4000
8
2000 Crss 0 0 10 20 30
Coss
4
0 40 50 60 0 25 50 75 100 125
VDS – Drain-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
Document Number: 70776 S-05111—Rev. F, 10-Dec-00
www.vishay.com
2-3
SUP/SUB75N06-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.2 VGS = 10 V ID = 30 A I S – Source Current (A) TJ = 150_C TJ = 25_C 10 100
Source-Drain Diode Forward Voltage
1.9 r DS(on) – On-Resistance ( Ω ) (Normalized)
1.6
1.3
1.0
0.7
0.4 –50
1 –25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature
100 500
Safe Operating Area
80 100 I D – Drain Current (A) I D – Drain Current (A) 60
Limited by rDS(on)
10 ms
100 ms
40
1 ms 10 TC = 25_C Single Pulse
20
10 ms 100 ms dc
0 0 25 50 75 100 125 150 175 TC – Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance
1 0.1 1 10 VDS – Drain-to-Source Voltage (V)
100
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
0.2
0.1 0.1 0.05 0.02
Single Pulse 0.01 10–5 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 3
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2-4
Document Number: 70776 S-05111—Rev. F, 10-Dec-00
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