SUB75P03-08

SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) –30 rDS(on) (W) 0.008 ID (A) –75a TO-220AB S TO-263 G DRAIN connected to TAB G GDS Top View SUP75P03-08 SUB75P03-08 P-Channel MOSFET DS Top View D ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IAR EAR Symbol VGS Limit "20 –75a –65 –200 –75 280 250d 3.7 –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. Document Number: 70772 S-05111—Rev. D, 10-Dec-99 www.vishay.com Free Air (TO-220AB) Symbol RthJA RthJA RthJC Limit 40 62.5 0.6 Unit _C/W 1 SUP/SUB75P03-08 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = –250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = –30 V, VGS = 0 V, TJ = 125_C VDS = –30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = –5 V, VGS = –10 V VGS = –10 V, ID = –30 A Drain-Source On-State Resistancea rDS(on) VGS = –10 V, ID = –30 A, TJ = 125_C VGS = –10 V, ID = –30 A, TJ = 175_C Forward Transconductancea gfs VDS = –15 V, ID = –30 A 30 –120 0.008 0.012 0.015 S W –30 –1 –3 "100 –1 –50 –150 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr Timec td(off) tf VDD = –15 V, RL = 0.2 W ID ] –75 A, VGEN = –10 V, RG = 2.5 W VDS = –15 V, VGS = –10 V, ID = –75 A VGS = 0 V, VDS = –25 V, f = 1 MHz 6900 1850 570 115 30 10 10 16 140 80 20 30 200 140 ns 140 nC pF Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = –75 A, di/dt = 100 A/ms IF = –75 A, VGS = 0 V –1.1 60 2.5 0.008 –75 A –200 –1.4 100 5 0.016 V ns A mC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 70772 S-05111—Rev. D, 10-Dec-99 SUP/SUB75P03-08 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10, 9, 8, 7, 6 V 160 I D – Drain Current (A) I D – Drain Current (A) 4V 120 150 TC = –55_C 25_C Transfer Characteristics 120 5V 80 90 125_C 60 40 3V 0 0 2 4 6 8 10 30 0 0.0 1.5 3.0 4.5 6.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Transconductance 100 TC = –55_C 80 g fs – Transconductance (S) 25_C r DS(on)– On-Resistance ( W ) 0.006 125_C 60 0.008 On-Resistance vs. Drain Current VGS = 10 V VGS = 20 V 0.004 40 0.002 20 0 0 15 30 45 60 0.000 0 20 40 60 80 100 VGS – Gate-to-Source Voltage (V) ID – Drain Current (A) Capacitance 8500 Ciss V GS – Gate-to-Source Voltage (V) 16 6500 VDS = 15 V ID = 75 A 20 Gate Charge C – Capacitance (pF) 12 4500 8 Coss 2500 Crss 4 500 0 6 12 18 24 30 0 0 30 60 90 120 150 180 210 VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC) Document Number: 70772 S-05111—Rev. D, 10-Dec-99 www.vishay.com 3 SUP/SUB75P03-08 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 1.8 VGS = 10 V ID = 30 A r DS(on)– On-Resistance ( W ) (Normalized) I S – Source Current (A) 1.5 100 Source-Drain Diode Forward Voltage TJ = 150_C TJ = 25_C 10 1.2 0.9 0.6 –50 1 –25 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 Safe Operating Area 80 I D – Drain Current (A) I D – Drain Current (A) 100 Limited by rDS(on) 100 ms 60 1 ms 10 10 ms TC = 25_C Single Pulse 100 ms dc, 1 s 40 20 0 0 25 50 75 100 125 150 175 TC – Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 0.1 1.0 10.0 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) Document Number: 70772 S-05111—Rev. D, 10-Dec-99 www.vishay.com 4