SUB85N02-03-E3

SUP/SUB85N02-03 Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 20 rDS(on) (W) 0.003 @ VGS = 4.5 V 0.0034 @ VGS = 2.5 V 0.0038 @ VGS = 1.8 V ID (A)a 85 85 85 TO-220AB TO-263 D G DRAIN connected to TAB G GDS Top View Ordering Information: SUP85N02-03—E3 (Lead Free) DS S N-Channel MOSFET Top View Ordering Information: SUB85N02-03—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipationa L = 0.1 mH TC = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 20 "8 85 85 240 30 45 250 −55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient J ti t A bi t Junction-to-Case Notes: a. See SOA curve for voltage derating. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71421 S-32619—Rev. B, 29-Dec-03 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 1 SUP/SUB85N02-03 Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 2 mA VDS = VGS, IDS = 2 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 30 A VGS = 4.5 V, ID = 30 A, TJ = 125_C Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 30 A, TJ = 175_C VGS = 2.5 V, ID = 30 A VGS = 1.8 V, ID = 30 A Forward Transconductancea gfs VDS = 5 V, ID = 30 A 30 0.0027 0.003 120 0.0025 0.003 0.0042 0.005 0.0034 0.0038 S W Symbol Test Condition Min Typ Max Unit 20 0.45 "100 1 250 V nA mA A Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 0.12 W ID ] 85 A, VGEN = 4.5 V, Rg = 2.5 W VDS = 10 V, VGS = 4.5 V, ID = 85 A , , VGS = 0 V, VDS = 20 V, f = 1 MHz 21250 2350 1520 140 18 24 20 200 450 320 30 300 670 480 ns 200 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Pulsed Current Forward Voltagea Reverse Recovery Time ISM VSD trr IF = 100 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 75 240 1.5 150 A V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71421 S-32619—Rev. B, 29-Dec-03 SUP/SUB85N02-03 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 4.5 thru 2 V 200 I D − Drain Current (A) I D − Drain Current (A) 200 250 TC = −55_C 25_C Transfer Characteristics 125_C 150 150 1.5 V 100 100 50 1, 0.5 V 0 0 2 4 6 8 10 VDS − Drain-to-Source Voltage (V) 50 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS − Gate-to-Source Voltage (V) Transconductance 500 TC = −55_C g fs − Transconductance (S) r DS(on) − On-Resistance ( W ) 400 25_C 300 125_C 200 0.004 0.005 On-Resistance vs. Drain Current VGS = 1.8 V 0.003 VGS = 4.5 V VGS = 2.5 V 0.002 100 0.001 0 0 20 40 60 80 100 120 0.000 0 20 40 60 80 100 120 ID − Drain Current (A) ID − Drain Current (A) 30000 Capacitance 8 VDS = 10 V ID = 30 A Gate Charge 24000 C − Capacitance (pF) V GS − Gate-to-Source Voltage (V) Ciss 6 18000 4 12000 6000 Crss 0 4 8 2 Coss 0 0 12 16 20 0 50 100 150 200 250 VDS − Drain-to-Source Voltage (V) Qg − Total Gate Charge (nC) www.vishay.com Document Number: 71421 S-32619—Rev. B, 29-Dec-03 3 SUP/SUB85N02-03 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 1.8 1.5 r DS(on) − On-Resistance ( W ) (Normalized) 1.2 0.9 0.6 0.3 0.0 −50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 30 A I S − Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C −25 0 25 50 75 100 125 150 175 1 0 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) TJ − Junction Temperature (_C) Drain-Source Voltage Breakdown vs. Junction Temperature 30 ID = 2 mA 28 V(BR)DSS (V) r DS(on) − On-Resistance ( W ) 0.016 0.020 On-Resistance vs. Gate-to-Source Voltage ID = 30 A 0.012 26 0.008 24 0.004 22 −50 −25 0 25 50 75 100 125 150 0.000 0.0 1.0 2.0 3.0 4.0 5.0 TJ − Junction Temperature (_C) VGS − Gate-to-Source Voltage (V) www.vishay.com 4 Document Number: 71421 S-32619—Rev. B, 29-Dec-03 SUP/SUB85N02-03 Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Case Temperature 100 1000 Safe Operating Area Limited by rDS(on) 80 100 I D − Drain Current (A) 60 I D − Drain Current (A) 10 ms 100 ms 1 ms 10 40 10 ms 100 ms dc 20 1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 TC − Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.1 1 10 VDS − Drain-to-Source Voltage (V) 100 Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (sec) 1 10 100 Document Number: 71421 S-32619—Rev. B, 29-Dec-03 www.vishay.com 5