SUB85N06-05

SUP/SUB85N06-05 New Product Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.0052 @ VGS = 10 V 0.0072 @ VGS = 4.5 V ID (A) "85 a TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP85N06-05 DS S N-Channel MOSFET Top View SUB85N06-05 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 "20 "85a "85a "240 "75 280 250c 3.7 –55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71113 S-20556—Rev. C, 22-Apr-02 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 SUP/SUB85N06-05 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125_C VDS = 48 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0044 0.0059 0.0052 0.0072 0.0085 0.010 S W 60 V 1 3 "100 1 50 250 A mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.4 W ID ^ 85 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 85 A VGS = 0 V, VDS = 25 V, f = 1 MHz 7560 1050 570 155 28 44 15 90 95 105 25 130 140 150 ns 220 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 85 A, di/dt = 100 A/ms IF = 85 A, VGS = 0 V 1.1 50 2.7 0.067 75 240 1.4 85 5 0.21 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 71113 S-20556—Rev. C, 22-Apr-02 SUP/SUB85N06-05 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 5 V 200 I D – Drain Current (A) 4V 150 I D – Drain Current (A) 160 200 Vishay Siliconix Transfer Characteristics 120 100 80 TC = 125_C 40 25_C 0 50 3V 0 0 2 4 6 8 10 –55_C 3 4 5 0 1 2 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Transconductance 250 TC = –55_C 25_C r DS(on) – On-Resistance ( W ) 200 g fs – Transconductance (S) 0.008 On-Resistance vs. Drain Current 0.006 VGS = 4.5 V VGS = 10 V 150 125_C 0.004 100 0.002 50 0 0 20 40 60 80 100 0.000 0 20 40 60 80 100 120 ID – Drain Current (A) ID – Drain Current (A) Capacitance 12000 Ciss 20 Gate Charge V GS – Gate-to-Source Voltage (V) 10000 C – Capacitance (pF) 16 VGS = 30 V ID = 85 A 8000 12 6000 8 4000 Coss 2000 Crss 0 6 12 18 24 30 4 0 0 0 60 120 180 240 300 VDS – Drain-to-Source Voltage (V) Document Number: 71113 S-20556—Rev. C, 22-Apr-02 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUP/SUB85N06-05 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 85 A r DS(on) – On-Resistance (W ) (Normalized) I S – Source Current (A) 1.5 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 –50 –25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 80 Drain Source Breakdown vs. Junction Temperature 100 I Dav (a) IAV (A) @ TA = 25_C V (BR)DSS (V) 70 ID = 250 mA 10 IAV (A) @ TA = 150_C 1 60 50 0.1 0.0001 0.001 0.01 tin (Sec) 0.1 1 40 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (_C) www.vishay.com 2-4 Document Number: 71113 S-20556—Rev. C, 22-Apr-02 SUP/SUB85N06-05 New Product THERMAL RATINGS Maximum Drain Current vs. Case Temperature 100 1000 Vishay Siliconix Safe Operating Area 80 100 I D – Drain Current (A) I D – Drain Current (A) 60 Limited by rDS(on) 10 10 ms 100 ms 1 ms 10 ms 100 ms dc 40 1 20 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 TC – Ambient Temperature (_C) 0.1 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) Document Number: 71113 S-20556—Rev. C, 22-Apr-02 www.vishay.com 2-5