SUB85N08-08

SUP/SUB85N08-08 New Product Vishay Siliconix N-Channel 75-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (W) 0.008 @ VGS = 10 V ID (A) 85 a TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP85N08-08 DS S N-Channel MOSFET Top View SUB85N08-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Drain Current C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 75 "20 85a 67a 240 75 280 250c 3.7 –55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71165 S-01884—Rev. B, 28-Aug-00 www.vishay.com RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 SUP/SUB85N08-08 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0063 0.008 0.014 0.018 S W 75 V 2.5 "100 1 50 250 A mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 35 V, RL = 0.4 W 35 V, 4 ID ^ 85 A, VGEN = 10 V RG = 2.5 W 85 A 10 V, 5 VDS = 35 V, VGS = 10 V ID = 85 A 35 V 10 V, 85 VGS = 0 V, VDS = 25 V, f = 1 MHz 5800 900 285 100 35 25 20 115 50 80 30 175 ns 75 120 150 nC C pF F Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr A, di/dt IF = 85 A di/d = 100 A/ms IF = 85 A, VGS = 0 V 1.0 70 4 0.14 85 A 240 1.5 120 7 0.30 V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 71165 S-01884—Rev. B, 28-Aug-00 SUP/SUB85N08-08 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 7 V 200 I D – Drain Current (A) 6V I D – Drain Current (A) 200 250 Vishay Siliconix Transfer Characteristics 150 150 100 5V 50 4, 3 V 0 0 2 4 6 8 10 100 TC = 125_C 50 25_C –55_C 0 0 1 2 3 4 5 6 7 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Transconductance 240 TC = –55_C r DS(on) – On-Resistance ( W ) 200 g fs – Transconductance (S) 25_C 125_C 0.008 0.010 On-Resistance vs. Drain Current VGS = 10 V 0.006 160 120 0.004 80 40 0.002 0 0 20 40 60 80 100 0 0 20 40 60 80 100 120 ID – Drain Current (A) ID – Drain Current (A) Capacitance 8000 7000 V GS – Gate-to-Source Voltage (V) 6000 C – Capacitance (pF) 5000 4000 3000 2000 1000 0 0 15 30 45 60 75 Ciss 16 20 Gate Charge VDS = 35 V ID = 85 A 12 8 Crss Coss 4 0 0 50 100 150 200 VDS – Drain-to-Source Voltage (V) Document Number: 71165 S-01884—Rev. B, 28-Aug-00 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUP/SUB85N08-08 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) – On-Resistance (W ) (Normalized) 2.0 I S – Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 95 Drain Source Breakdown vs. Junction Temperature 90 100 IAV (A) @ TA = 25_C I Dav (a) V (BR)DSS (V) 85 ID = 250 mA 10 IAV (A) @ TA = 150_C 1 80 75 0.1 0.00001 0.0001 0.001 0.01 0.1 1 70 –50 –25 0 25 50 75 100 125 150 175 tin (Sec) TJ – Junction Temperature (_C) www.vishay.com 2-4 Document Number: 71165 S-01884—Rev. B, 28-Aug-00 SUP/SUB85N08-08 New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 1000 Vishay Siliconix Safe Operating Area 80 100 I D – Drain Current (A) 60 I D – Drain Current (A) 10 ms 100 ms Limited by rDS(on) 10 1 ms 10 ms 100 ms dc 40 20 1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC – Ambient Temperature (_C) VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) Document Number: 71165 S-01884—Rev. B, 28-Aug-00 www.vishay.com 2-5