SUD06N10-225L

SUD06N10-225L New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.200 @ VGS = 10 V 0.225 @ VGS = 4.5 V ID (A) 6.5 6.0 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD06N10-225L S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Drain Current (T Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C PD TJ, Tstg TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IS IAR EAR Limit 100 "20 6.5 3.75 8.0 6.5 5.0 1.25 20b 1.5a –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Ambienta Junction-to-Case Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71253 S–01584—Rev. A, 17-Jul-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Symbol RthJA RthJC Typical 40 80 6.0 Maximum 50 100 7.5 Unit _C/W 1 SUD06N10-225L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 80 V, VGS = 0 V, TJ = 125_C VDS = 80 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 3 A DiS i Drain-Source On-State Resistanceb On S Resistance rDS(on) VGS = 10 V, ID = 3 A, TJ = 125_C VGS = 10 V, ID = 3 A, TJ = 175_C VGS = 4.5 V, ID = 1.0 A Forward Transconductanceb gfs VDS = 15 V, ID = 3 A 0.180 8.5 8.0 0.160 0.200 0.350 0.450 0.225 S W 100 V 1.0 3.0 "100 1 50 250 A mA nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 50 V, RL = 7.5 W 50 V, 5 ID ^ 6.5 A, VGEN = 10 V RG = 2.5 W 5A 5 10 V, VDS = 50 V, VGS = 5 V, ID = 6.5 A 50 V 5 VGS = 0 V, VDS = 25 V F = 1 MH 25 V, MHz 240 42 17 2.7 0.6 0.7 7 8 8 9 11 12 ns 12 14 4.0 nC C pF F Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb ISM VSD trr IF = 6.5 A, VGS = 0 V IF = 6.5 A, di/dt = 100 A/ms 0.9 35 8.0 1.3 60 A V ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 71253 S–01584—Rev. A, 17-Jul-00 SUD06N10-225L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 10 thru 5 V 12 I D – Drain Current (A) I D – Drain Current (A) 12 15 TC = –55_C 25_C Vishay Siliconix Transfer Characteristics 9 4V 9 125_C 6 6 3 3, 2 V 0 0 2 4 6 8 10 3 0 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Transconductance 15 TC = –55_C 12 r DS(on)– On-Resistance ( W ) g fs – Transconductance (S) 25_C 9 125_C 6 0.30 On-Resistance vs. Drain Current 0.25 VGS = 4.5 V 0.20 VGS = 10 V 0.15 0.10 3 0.05 0 0 3 6 9 12 15 0 0 3 6 9 12 15 ID – Drain Current (A) ID – Drain Current (A) Capacitance 350 300 C – Capacitance (pF) 250 200 150 100 50 0 0 20 40 60 80 100 Coss Crss Ciss 10 Gate Charge V GS – Gate-to-Source Voltage (V) 8 VDS = 50 V ID = 6.5 A 6 4 2 0 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC) Document Number: 71253 S–01584—Rev. A, 17-Jul-00 www.vishay.com S FaxBack 408-970-5600 3 SUD06N10-225L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 3 A r DS(on)– On-Resistance ( W ) (Normalized) 2.0 I S – Source Current (A) 10 Source-Drain Diode Forward Voltage 1.5 TJ = 175_C 1.0 TJ = 25_C 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 8 10 10 ms Limited by rDS(on) 6 I D – Drain Current (A) I D – Drain Current (A) 100 ms Safe Operating Area 4 1 1 ms 2 TC = 25_C Single Pulse 10 ms 0 0 25 50 75 100 125 150 175 TC – Case Temperature (_C) 100 ms 1 s, dc 0.1 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 71253 S–01584—Rev. A, 17-Jul-00