SUD10P06-280L

SUD/SUU10P06-280L Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) 0.170 @ VGS = –10 V 0.280 @ VGS = –4.5 V ID (A) –10 –8 TO-251 S TO-252 G Drain Connected to Tab G D S G D S and DRAIN-TAB Top View Order Number: SUD10P06-280L D P-Channel MOSFET Top View Order Number: SUU10P06-280L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VGS ID IDM IS IAR EAR PD TJ, Tstg Limit "20 –10 –7 –20 –10 –10 5 37 2a –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter FR4 Board Mount Junction-to-Ambienta Junction-to-Case Notes a. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70780 S-20349—Rev. F, 18-Apr-02 www.vishay.com Free Air RthJA RthJC Symbol Typical 60 120 3.7 Maximum 70 140 4.0 Unit _C/W 2-1 SUD/SUU10P06-280L Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = –250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V, TJ = 125_C VDS = –60 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = –5 V, VGS = –10 V VGS = –10 V, ID = –5 A VGS = –10 V, ID = –5 A, TJ = 125_C Drain-Source On-State Resistanceb rDS(on) VGS = –10 V, ID = –5 A, TJ = 175_C VGS = –4.5 V, ID = –2 A Forward Transconductanceb gfs VDS = –15 V, ID = –5 A 0.210 6 –10 0.130 0.170 0.31 0.375 0.280 S W –60 V –1.0 –2.0 –3.0 "100 –1 –50 –150 A mA nA Symbol Test Condition Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = –30 V, RL = 3 W ID ] 10 A, VGEN = –10 V, RG = 2.5 W VDS = –30 V, VGS = –10 V, ID = –10 A VDS = –25 V, VGS = 0 V, f = 1 MHz 635 100 30 11.5 3.5 2 9 16 17 19 20 20 30 35 ns 25 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)a Pulsed Current Forward Voltageb Reverse Recovery Time ISM VSD trr IF = 10 A, VGS = 0 V IF = 10 A, di/dt = 100 A/ms 50 –20 –1.3 80 A V ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70780 S-20349—Rev. F, 18-Apr-02 SUD/SUU10P06-280L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 7 V 24 I D – Drain Current (A) 6V 18 I D – Drain Current (A) 8 10 Transfer Characteristics 6 12 5V 4 TC = 125_C 2 25_C 0 –55_C 3 4 5 6 4V 3V 0 0 2 4 6 8 10 0 1 2 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Transconductance 18 TC = –55_C r DS(on) – On-Resistance ( W ) 0.9 1.2 On-Resistance vs. Drain Current 15 g fs – Transconductance (S) 12 25_C 9 125_C 0.6 6 0.3 VGS = 4.5 V VGS = 10 V 3 0 0 4 8 12 16 20 0.0 0 2 4 6 8 10 ID – Drain Current (A) ID – Drain Current (A) Capacitance 1000 20 Gate Charge 800 C – Capacitance (pF) Ciss 600 V GS – Gate-to-Source Voltage (V) 16 VDS = 20 V ID = 10 A 12 400 8 200 Crss 0 0 10 20 Coss 4 0 30 40 50 60 0 4 8 12 16 20 24 VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC) Document Number: 70780 S-20349—Rev. F, 18-Apr-02 www.vishay.com 2-3 SUD/SUU10P06-280L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 5 A r DS(on) – On-Resistance ( W ) (Normalized) 2.0 I S – Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Drain Current vs. Case Temperature 12 30 10 ms 100 ms 10 9 I D – Drain Current (A) I D – Drain Current (A) Limited by rDS(on) 1 ms 1 10 ms 100 ms dc, 1 s Safe Operating Area 6 3 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 TC – Case Temperature (_C) 0.1 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 70780 S-20349—Rev. F, 18-Apr-02 10–1 1 3 2-4