SUD15N06

SUD15N06-90L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.065 @ VGS = 10 V 0.090 @ VGS = 4.5 V ID (A) 15 14 D TO-252 G Drain Connected to Tab G D S S N-Channel MOSFET Top View Order Number: SUD15N06-90L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Drain Current C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VGS ID IDM IS IAR EAR PD TJ, Tstg Limit "20 15 12 30 15 15 11 37 2a –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Free Air, FR4 Board Mounta Junction-to-Case Notes: a. 1.36 x 2.1 surface mounted on 1” x 1” FR4 Board. Document Number: 71087 S-49634—Rev. D, 20-Sep-99 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA RthJC Typical 60 3.7 Maximum 70 4.0 Unit _C/W 2-1 SUD15N06-90L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 10 A Drain Source On State Resistanceb DiS OS Drain-Source On-State R i VGS = 10 V, ID = 10 A, TJ = 125_C rDS( ) DS(on) VGS = 10 V, ID = 10 A, TJ = 175_C VGS = 4.5 V, ID = 5 A Forward Transconductanceb gfs VDS = 15 V, ID = 10 A 0.065 11 15 0.050 0.065 0.12 0.15 0.090 S W 60 1.0 2.0 3.0 "100 1 50 150 A mA nA V Symbol Test Condition Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 2 W 30 V, ID ^ 15 A, VGEN = 10 V RG = 2.5 W 15 A 10 V, 5 30 V, 10 V, 15 VDS = 30 V VGS = 10 V ID = 15 A VGS = 0 V, VDS = 25 V f = 1 MH 25 V, MHz 524 98 28 12 2 3.5 7 8 15 7 20 25 ns 40 20 20 nC C pF F Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C) Pulsed Current Diode Forward Voltage Reverse Recovery Time ISM VSD trr IF = 15 A, VGS = 0 V IF = 15 A, di/dt = 100 A/ms 0.9 29 30 1.2 60 A V ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71087 S-49634—Rev. D, 20-Sep-99 SUD15N06-90L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 6 V 40 I D – Drain Current (A) I D – Drain Current (A) 5V 30 16 20 Transfer Characteristics 12 20 4V 8 TC = 125_C 25_C 0 –55_C 3 4 5 10 3V 0 0 2 4 6 8 10 4 0 1 2 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Transconductance 25 0.10 On-Resistance vs. Drain Current 20 g fs – Transconductance (S) TC = –55_C r DS(on)– On-Resistance ( W ) 25_C 0.08 VGS = 4.5 V 0.06 VGS = 10 V 15 125_C 10 0.04 5 0.02 0 0 4 8 12 16 20 0 0 4 8 12 16 20 ID – Drain Current (A) ID – Drain Current (A) Capacitance 1000 20 Gate Charge 800 C – Capacitance (pF) V GS – Gate-to-Source Voltage (V) 16 VDS = 30 V ID = 15 A 600 Ciss 12 400 8 200 Crss 0 0 10 20 Coss 4 0 30 40 50 60 0 4 8 12 16 20 24 VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC) Document Number: 71087 S-49634—Rev. D, 20-Sep-99 www.vishay.com S FaxBack 408-970-5600 2-3 SUD15N06-90L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 10 A r DS(on)– On-Resistance ( W ) (Normalized) 2.0 I S – Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C 10 1.0 TJ = 25_C 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Drain Current vs. Case Temperature 20 50 10 ms 16 I D – Drain Current (A) I D – Drain Current (A) 100 ms 10 Limited by rDS(on) Safe Operating Area 12 1 ms 1 TC = 25_C Single Pulse 10 ms 100 ms dc 8 4 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 71087 S-49634—Rev. D, 20-Sep-99 10–1 1 3 2-4