SUD15N15-95_08

SUD15N15-95 Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 150 FEATURES ID (A) 15 15 rDS(on) (W) 0.095 @ VGS = 10 V 0.100 @ VGS = 6 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature D 100% Rg Tested APPLICATIONS D Primary Side Switch D TO-252 Drain Connected to Tab G D S G Top View Ordering Information: SUD15N15-95 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit 150 "20 15 8.7 25 15 15 11.3 62b 2.7a - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta J ti t A bi t Junction-to-Case Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71641 S-31724—Rev. B, 18-Aug-03 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 16 45 2 Maximum 20 55 2.4 Unit _C/W 1 SUD15N15-95 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currentb IDSS ID(on) VDS = 120 V, VGS = 0 V, TJ = 125_C VDS = 120 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = 10 V, ID = 15 A, TJ = 125_C VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 6 V, ID = 10 A Forward Transconductanceb gfs VDS = 15 V, ID = 15 A 0.081 25 25 0.077 0.095 0.190 0.250 0.100 S W 150 2 "100 1 50 250 A mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 75 V, RL = 5 W V, ID ^ 15 A, VGEN = 10 V, RG = 2.5 W 1 8 35 17 30 VDS = 75 V, VGS = 10 V, ID = 15 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 900 115 70 20 5.5 7 3.2 12 55 25 45 ns W 25 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 15 A, VGS = 0 V IF = 15 A, di/dt = 100 A/ms 0.9 55 25 1.5 85 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71641 S-31724—Rev. B, 18-Aug-03 SUD15N15-95 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 VGS = 10 thru 6 V 25 Transfer Characteristics 20 I D - Drain Current (A) 20 I D - Drain Current (A) 15 5V 10 15 10 TC = 125_C 5 25_C - 55_C 0 5 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 4V 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance 40 TC = - 55_C 0.12 r DS(on)- On-Resistance ( W ) 32 g fs - Transconductance (S) 25_C 0.10 0.14 On-Resistance vs. Drain Current 24 VGS = 6 V 0.08 0.06 0.04 0.02 0.00 VGS = 10 V 125_C 16 8 0 0 5 10 15 20 25 0 5 10 15 20 25 ID - Drain Current (A) 1500 ID - Drain Current (A) 20 VDS = 75 V ID = 15 A Capacitance Gate Charge 1200 C - Capacitance (pF) Ciss V GS - Gate-to-Source Voltage (V) 16 900 12 600 8 300 Crss 4 Coss 0 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) 0 0 8 16 24 32 40 Qg - Total Gate Charge (nC) Document Number: 71641 S-31724—Rev. B, 18-Aug-03 www.vishay.com 3 SUD15N15-95 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.8 2.4 r DS(on)- On-Resistance ( W ) (Normalized) 2.0 1.6 1.2 0.8 0.4 0.0 - 50 1 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) VGS = 10 V ID = 15 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 20 100 Safe Operating Area 15 I D - Drain Current (A) I D - Drain Current (A) 10 Limited by rDS(on) 10 ms 100 ms 10 1 TC = 25_C Single Pulse 1 ms 10 ms 100 ms 1 s, dc 5 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse Normalized Thermal Transient Impedance, Junction-to-Case 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71641 S-31724—Rev. B, 18-Aug-03 4 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1