SUD23N06-31_11

SUD23N06-31 Vishay Siliconix N-Channel 60 V (D-S), MOSFET FEATURES ID (A)a 9.1 7.6 Qg (Typ.) 6.5 nC PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.031 at VGS = 10 V 0.045 at VGS = 4.5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 • DC/DC Converters D G Drain Connected to Tab G D S S N-Channel MOSFET Top View Ordering Information: SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 60 ± 20 21.4 17.1 9.1a 7.6a 50 20.8 3.8a 20 20 31.25 20 5.7a 3.6a - 55 to 150 °C W mJ A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Notes: a. Surface mounted on 1" x 1" FR4 board, t  10 s. a Symbol t  10 s Steady State RthJA RthJC Typical 18 3.2 Maximum 22 4.0 Unit °C/W Document Number: 68857 S11-0181-Rev. B, 07-Feb-11 www.vishay.com 1 SUD23N06-31 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta IS ISM VSD trr Qrr ta tb IF = 15 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 1 5 A 1.0 30 35 20 10 TC = 25 °C 20.8 50 1.5 60 70 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 30 V, RL = 1.3  ID  23 A, VGEN = 10 V, Rg = 1  VDD = 30 V, RL = 1.3  ID  23 A, VGEN = 4.5 V, Rg = 1  f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 23 A VDS = 30 V, VGS = 4.5 V, ID = 23 A VDS = 25 V, VGS = 0 V, f = 1 MHz 670 140 60 11 6.5 3.0 3.0 1.6 18 250 35 68 8 15 30 25 3.2 30 400 55 110 15 25 45 40 ns  17 13 nC pF VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 70 °C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 10 A VDS = 15 V, ID = 15 A 50 0.025 0.037 20 0.031 0.045 1.0 60 65 - 6.3 3.0 ± 100 1 20 V mV/°C V nA µA A  S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68857 S11-0181-Rev. B, 07-Feb-11 SUD23N06-31 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 VGS = 10 V thru 6 V 40 I D - Drain Current (A) 5V 10 8 I D - Drain Current (A) 30 6 20 4V 4 TC = 25 °C 2 TC = 125 °C 10 3V 0 0 2 4 6 8 10 TC = - 55 °C 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 32 TC = - 55 °C 24 RDS(on) - On-Resistance () g fs - Transconductance (S) 25 °C 125 °C 0.08 0.10 Transfer Characteristics 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 16 8 0 0 5 10 15 20 25 0.00 0 10 20 30 40 50 ID - Drain Current (A) ID - Drain Current (A) Transconductance 1000 On-Resistance vs. Drain Current 10 ID = 23 A VGS - Gate-to-Source Voltage (V) VDS = 30 V VDS = 15 V 6 VDS = 45 V 4 800 C - Capacitance (pF) Ciss 600 8 400 200 Crss 0 0 10 20 Coss 2 0 30 40 50 60 0 2 4 6 8 10 12 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 68857 S11-0181-Rev. B, 07-Feb-11 Gate Charge www.vishay.com 3 SUD23N06-31 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.1 ID = 15 A 1.8 R DS(on) - On-Resistance I S - Source Current (A) VGS = 10 V 10 TJ = 150 °C TJ = 25 °C 1 100 (Normalized) 1.5 VGS = 4.5 V 1.2 0.1 TJ = - 50 °C 0.9 0.01 0.6 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 0.08 0.5 Source-Drain Diode Forward Voltage R DS(on) - On-Resistance (Ω) 0.2 0.06 TJ = 125 °C 0.04 VGS(th) Variance (V) - 0.1 ID = 1 mA ID = 250 µA - 0.7 - 0.4 0.02 TJ = 25 °C 0.00 0 1 2 3 4 5 6 7 8 9 10 - 1.0 - 50 - 25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage 500 100 Threshold Voltage Limited by RDS(on)* 400 I D - Drain Current (A) 10 10 µs 100 µs Power (W) 300 1 ms 1 10 ms 100 ms, DC 200 0.1 100 TC = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 0 0.001 0.01 0.1 Time (s) 1 10 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Single Pulse Power, Junction-to-Ambient Single Pulse Power, Junction-to-Case www.vishay.com 4 Document Number: 68857 S11-0181-Rev. B, 07-Feb-11 SUD23N06-31 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 25 20 I D - Drain Current (A) 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating*, Junction-to-Case 40 3.0 2.5 30 2.0 Power (W) Power (W) 20 1.5 1.0 10 0.5 0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68857 S11-0181-Rev. B, 07-Feb-11 www.vishay.com 5 SUD23N06-31 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = Notes: 0.02 2. Per Unit Base = RthJA = 50 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68857. www.vishay.com 6 Document Number: 68857 S11-0181-Rev. B, 07-Feb-11 Package Information Vishay Siliconix TO-252AA CASE OUTLINE E b2 L2 A C1 MILLIMETERS DIM. A A1 A2 b MIN. 2.21 0.89 0.030 0.71 0.76 5.23 0.46 0.46 5.97 4.10 6.48 4.49 MAX. 2.38 1.14 0.127 0.88 1.14 5.44 0.58 0.58 6.22 4.45 6.73 5.50 MIN. 0.087 0.035 0.001 0.028 0.030 0.206 0.018 0.018 0.235 0.161 0.255 0.177 INCHES MAX. 0.094 0.045 0.005 0.035 0.045 0.214 0.023 0.023 0.245 0.175 0.265 0.217 D H b1 b2 C L1 L3 C1 L gage plane height (0.5 mm) D D1 E b e e1 b1 C A2 A1 E1 e e1 H L L1 L2 L3 2.28 BSC 4.57 BSC 9.65 1.40 0.64 0.89 1.15 10.41 1.78 1.02 1.27 1.52 0.090 BSC 0.180 BSC 0.380 0.055 0.025 0.035 0.040 0.410 0.070 0.040 0.050 0.060 D1 E1 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. Document Number: 71197 18-Apr-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 (5.690) (10.668) 0.420 0.180 (4.572) 0.055 (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (2.286) 0.090 (2.202) 0.087 (6.180) 0.243 APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1