SUD50N03-09P

SUD50N03-09P Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)b 63b 52b rDS(on) (W) 0.0095 @ VGS = 10 V 0.014 @ VGS = 4.5 V D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D DC/DC Converters D Synchronous Rectifiers D TO-252 Drain Connected to Tab G D S G Top View S Ordering Information: SUD50N03-09P SUD50N03-09P—E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 "20 63b 44.5b 50 10 35 61 65.2 7.5a −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Based on maximum allowable Junction Temperature, package limitation current is 50 A. Document Number: 71856 S-40573—Rev. E, 29-Mar-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 16 40 1.8 Maximum 20 50 2.3 Unit _C/W 1 SUD50N03-09P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 20 0.0115 50 0.0076 0.0095 0.015 0.014 S W 30 1.0 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W V, .3 ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 50 A VGS = 0 V, VDS = 25 V, f = 1 MHz 2200 410 180 11 7.5 5.0 1.5 9 80 22 8 2.1 15 120 35 12 ns W 16 nC p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 35 100 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 120 VGS = 10 thru 6 V 5V 90 I D − Drain Current (A) I D − Drain Current (A) 90 120 Transfer Characteristics 60 4V 60 TC = 125_C 30 25_C 0 −55_C 3 4 5 6 30 3V 0 0 2 4 6 2V 8 10 0 1 2 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 71856 S-40573—Rev. E, 29-Mar-04 2 SUD50N03-09P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 100 0.05 On-Resistance vs. Drain Current g fs − Transconductance (S) TC = −55_C 25_C 125_C 60 r DS(on)− On-Resistance ( W ) 80 0.04 0.03 40 0.02 VGS = 4.5 V VGS = 10 V 20 0.01 0 0 10 20 30 40 50 0.00 0 20 40 60 80 100 ID − Drain Current (A) 3000 2500 C − Capacitance (pF) 2000 1500 1000 Coss 500 0 0 5 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) Crss ID − Drain Current (A) 10 VDS = 15 V ID = 30 A Capacitance Ciss V GS − Gate-to-Source Voltage (V) Gate Charge 8 6 4 2 0 0 6 12 18 24 30 Qg − Total Gate Charge (nC) 2.0 On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 30 A I S − Source Current (A) Source-Drain Diode Forward Voltage 1.6 rDS(on) − On-Resiistance (Normalized) 1.2 TJ = 150_C 10 TJ = 25_C 0.8 0.4 0.0 −50 −25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) TJ − Junction Temperature (_C) Document Number: 71856 S-40573—Rev. E, 29-Mar-04 www.vishay.com 3 SUD50N03-09P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 25 1000 Safe Operating Area Limited by rDS(on) 20 I D − Drain Current (A) I D − Drain Current (A) 100 10, 100 ms 15 10 1 ms 10 ms 100 ms 1s 10 s TA = 25_C Single Pulse 100 s dc 10 1 5 0.1 0 0 25 50 75 100 125 150 175 TA − Ambient Temperature (_C) 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 71856 S-40573—Rev. E, 29-Mar-04