SUM09MN20-270

SUM09N20-270 New Product Vishay Siliconix N-Channel 200-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (W) 0.270 @ VGS = 10 V 0.300 @ VGS = 6 V ID (A) 9 8.5 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package D TO-263 G G DS S N-Channel MOSFET Top View Ordering Information: SUM09N20-270 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 200 "20 9 5.2 10 7 2.45 60b 3.75 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case (Drain) Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72158 S-03414—Rev. A, 03-Mar-03 www.vishay.com Mount)c Symbol RthJA RthJC Limit 40 2.5 Unit _C/W 1 SUM09N20-270 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 160 V, VGS = 0 V, TJ = 125_C VDS = 160 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 5 A Drain-Source On-State Drain Source On State Resistancea VGS = 10 V, ID = 5 A, TJ = 125_C rDS( ) DS(on) VGS = 10 V, ID = 5 A, TJ = 175_C VGS = 6 V, ID = 5 A Forward Transconductancea gfs VDS = 15 V, ID = 5 A 0.240 15 10 0.216 0.270 0.54 0.71 0.300 S W 200 V 2 4 "100 1 50 250 A mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf VDD = 100 V, RL = 10 W V, ID ^ 10 A, VGEN = 10 V, RG = 2.5 W VDS = 100 V, VGS = 10 V, ID = 10 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 580 75 30 11 2.7 4 4.0 10 35 25 40 15 55 40 60 ns W 17 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr 25_C)b 9 10 IF = 10 A, VGS = 0 V 0.9 100 IF = 10 A, di/dt = 100 A/ms , 5 0.25 1.5 150 8 0.6 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72158 S-03414—Rev. A, 03-Mar-03 SUM09N20-270 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 6 V 8 I D - Drain Current (A) 5V 6 I D - Drain Current (A) 8 10 Vishay Siliconix Transfer Characteristics 6 4 4 TC = 125_C 2 25_C - 55_C 0 2 4V 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 30 TC = - 55_C 25_C g fs - Transconductance (S) 20 125_C r DS(on) - On-Resistance ( W ) 25 0.4 0.5 On-Resistance vs. Drain Current 0.3 VGS = 6 V 0.2 VGS = 10 V 0.1 15 10 5 0 0 2 4 6 8 10 0.0 0 2 4 6 8 10 ID - Drain Current (A) ID - Drain Current (A) Capacitance 800 700 V GS - Gate-to-Source Voltage (V) 16 600 500 400 300 200 100 0 0 40 80 120 160 200 Crss Coss Ciss 20 Gate Charge VDS = 100 V ID = 10 A C - Capacitance (pF) 12 8 4 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Document Number: 72158 S-03414—Rev. A, 03-Mar-03 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM09N20-270 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 3.0 VGS = 10 V ID = 5 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 2.5 r DS(on) - On-Resistance (W ) (Normalized) 2.0 TJ = 150_C 10 TJ = 25_C 1.5 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 240 230 ID = 1.0 mA V (BR)DSS (V) 220 210 200 190 180 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72158 S-03414—Rev. A, 03-Mar-03 SUM09N20-270 New Product THERMAL RATINGS Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature 10 100 Safe Operating Area 8 I D - Drain Current (A) I D - Drain Current (A) 10 Limited by rDS(on) 10 ms 100 ms 6 4 1 ms 1 TC = 25_C Single Pulse 10 ms dc, 100 ms 2 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (_C) 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Document Number: 72158 S-03414—Rev. A, 03-Mar-03 www.vishay.com 5