SUU15N15-95

SUU15N15-95 Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 150 150 FEATURES ID (A) 15 15 rDS(on) (Ω) 0.095 @ VGS = 10 V 0.100 @ VGS = 6 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature D 100% Rg Tested APPLICATIONS D Primary Side Switch D TO-251 G Drain Connected to Tab G D S S Top View Ordering Information: SUU15N15-95 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (TJ = 175_C)b 175 C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle ≤ 1%) Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IS IAR EAR Symbol VDS VGS Limit 150 20 15 8.7 25 15 15 11.3 62b 2.7a --55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta J ti t A bi t Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71670 S-31724—Rev. B, 18-Aug-03 www.vishay.com t ≤ 10 sec Steady State RthJA RthJC Symbol Typical 16 45 2 Maximum 20 55 2.4 Unit _C/W C/ 1 SUU15N15-95 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 120 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS DSS VDS = 120 V, VGS = 0 V, TJ = 125_C VDS = 120 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Resistance Drain Source On State Resistanceb VGS = 10 V, ID = 15 A, TJ = 125_C rDS(on) VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 6 V, ID = 10 A Forward Transconductanceb gfs VDS = 15 V, ID = 15 A 0.081 25 25 0.077 0.095 0.190 0.250 0.100 S Ω 150 V 2 100 1 50 250 A mA nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 75 V, RL = 5 Ω 75 ID ≅ 15 A, VGEN = 10 V, Rg = 2.5 Ω 1 8 35 17 30 VDS = 75 V, VGS = 10 V, ID = 15 A , GS , DS VGS = 0 V, VDS = 25 V, f = 1 MHz 900 115 70 20 5.5 7 3.6 12 55 25 45 ns ns Ω 25 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 15 A, VGS = 0 V IF = 15 A, di/dt = 100 A/ms 0.9 55 25 1.5 85 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71670 S-31724—Rev. B, 18-Aug-03 SUU15N15-95 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 VGS = 10 thru 6 V 20 I D -- Drain Current (A) I D -- Drain Current (A) 20 25 Transfer Characteristics 15 5V 10 15 10 TC = 125_C 5 25_C --55_C 0 5 3V 0 0 2 4 6 8 10 4V 0 1 2 3 4 5 6 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Transconductance 40 TC = --55_C 0.12 32 g fs -- Transconductance (S) r DS(on)-- On-Resistance ( Ω ) 25_C 0.10 0.14 On-Resistance vs. Drain Current VGS = 6 V 0.08 VGS = 10 V 0.06 0.04 0.02 0.00 24 125_C 16 8 0 0 5 10 15 20 25 0 5 10 15 20 25 ID -- Drain Current (A) ID -- Drain Current (A) Capacitance 1500 20 Gate Charge 1200 C -- Capacitance (pF) Ciss V GS -- Gate-to-Source Voltage (V) 16 VDS = 75 V ID = 15 A 900 12 600 8 300 Crss Coss 4 0 0 20 40 60 80 100 0 0 8 16 24 32 40 VDS -- Drain-to-Source Voltage (V) Qg -- Total Gate Charge (nC) Document Number: 71670 S-31724—Rev. B, 18-Aug-03 www.vishay.com 3 SUU15N15-95 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.8 2.4 r DS(on)-- On-Resistance ( Ω ) (Normalized) 2.0 1.6 1.2 0.8 0.4 0.0 --50 1 --25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 VGS = 10 V ID = 15 A I S -- Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C TJ -- Junction Temperature (_C) VSD -- Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 20 100 Safe Operating Area 15 I D -- Drain Current (A) I D -- Drain Current (A) 10 Limited by rDS(on) 10 ms 100 ms 10 1 TC = 25_C Single Pulse 1 ms 10 ms 100 ms 1 s, dc 5 0 0 25 50 75 100 125 150 175 TC -- Case Temperature (_C) 0.1 0.1 1 10 100 1000 VDS -- Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 10 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71670 S-31724—Rev. B, 18-Aug-03 4