T8714VA
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
FEATURES
• Package type: chip
-
• Package form: single chip • Technology: double hetero • Dimensions chip (L x W x H in mm): 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in
21594-1
DESCRIPTION
T8714VA is an infrared, 865 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top.
GENERAL INFORMATION
The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products.
PRODUCT SUMMARY
COMPONENT T8714VA Note Test condition see table “Basic Characteristics” Ie (mW/sr) 4.2 ϕ (deg) > ± 80 λp (nm) 865 tr (ns) 13
ORDERING INFORMATION
ORDERING CODE T8714VA-SF-F Note MOQ: minimum order quantity PACKAGING Wafer sawn on foil REMARKS MOQ: 25 000 pcs PACKAGE FORM Chip
ABSOLUTE MAXIMUM RATINGS
PARAMETER Forward current Reverse voltage Surge forward current Junction temperature Operating temperature range Storage temperature range chip Storage temperature range on foil Note Tamb = 25 °C, unless otherwise specified Document Number: 81130 Rev. 1.3, 29-Mar-10 For technical questions, contact: optochipsupport@vishay.com www.vishay.com 1 tp = 100 µs TEST CONDITION SYMBOL IF VR IFSM Tj Tamb Tstg1 Tstg2 VALUE 100 5 1 125 - 40 to + 100 - 40 to + 100 - 40 to + 50 UNIT mA V A °C °C °C °C
T8714VA
Vishay Semiconductors Specification of GaAlAs IR Emitting
Diode Chip
BASIC CHARACTERISTICS
PARAMETER Forward voltage Radiant power (2) Radiant intensity (3) Radiant power (epoxy encapsulated) Radiant power chip (4) Temperature coefficient of radiant power Reverse voltage Temperature coefficient of forward voltage Angle of half intensity Peak wavelength Spectral bandwidth Rise time/fall time
(1)
TEST CONDITION IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 50 mA IF = 100 mA IR = 10 µA IF = 1 m A IF = 100 mA IF = 30 mA IF = 30 mA IF = 100 mA
SYMBOL VF φe Ie φe φe TKφe VR TKVF ϕ λp λ0.5 tr, tf
MIN.
TYP. 1.5 26 4.2 52
MAX.
UNIT V mW mW/sr mW
4.4
5.8 - 0.35
7.2
mW %/K V mV/K deg
5
18 - 1.8 > ± 80
850
865 48 13
880
nm nm ns
Notes (1) T amb = 25 °C, unless otherwise specified (2) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating (3) The radiant intensity, I , is measured on the geometric axis of the TO-18 header e (4) The radiant power, φ , is measured with chip on bare plate and aperture angle about 30°, as indicated on the label of each wafer e
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1.0 - 80° 90° 80°
ϕe rel - Relative Radiant Power
- 70° 0.8 IF = 30 mA 0.6 - 30° 0.4 - 20° - 10° 0.2 0° 100 0 700 750 800 850 900 950 1000
21596
70° 60° 50° 40° 30° 20° 10° 0°
- 60° - 50° - 40°
50
0
50
100
Relative Angular Intensity
21623
λ - Wavelength (nm)
Fig. 1 - Relative Spectral Emission φe rel = f (λ)
Fig. 2 - Radiant Characteristics Irel = f(ϕ)
DIMENSIONS
Electrode pattern: P (anode) side Sectional view (schematic): N (cathode) side P-type GaAlAs P-type GaAlAs anode
typ. 150 µm
N-type GaAlAs
21624
Fig. 3 www.vishay.com 2 For technical questions, contact: optochipsupport@vishay.com Document Number: 81130 Rev. 1.3, 29-Mar-10
T8714VA
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
MECHANICAL DIMENSIONS
PARAMETER Length of chip edge (x-direction) Length of chip edge (y-direction) Emission area Die height Diameter of bondpad SYMBOL Lx Ly AE H d MIN. TYP. 0.37 0.37 0.325 x 0.325 0.16 0.14 MAX. UNIT mm mm mm2 mm mm
ADDITIONAL INFORMATION
Frontside metallization, anode Backside metallization, cathode Dicing Die bonding technology
(1)
Aluminum Gold alloy Sawing Epoxy bonding
Note (1) All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870. The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure by QM is not installed.
HANDLING AND STORAGE CONDITIONS
• The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only. It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment. • Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. • Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used.
PACKING
Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for packing material that is returned unsorted or which we are not obliged to accept.
Document Number: 81130 Rev. 1.3, 29-Mar-10
For technical questions, contact: optochipsupport@vishay.com
www.vishay.com 3
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
www.vishay.com 1